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摘要: 本文用红外探测器测量了注磷Si在高功率连续CO2激光辐照下反射率随时间的变化,发现在激光加热和随后冷却的过程中均出现不可逆的反射率跃升现象,这说明Si的表面载流子浓度也有着类似的变化。
Abstract: The change of reflectivity of P-implanted Si with time under high power CW CO2 laser irradiation has been measured by infrared detector. We discover that the reflectivity increases irreversibly in both the laser heating and cooling processes. This means that the surface carrier concentration of ion-implanted Si would change similarly.