| 引用本文: |
|
| Citation: |
|
摘要: 用反射式高能电子衍射仪首次观察到在Si(111)面上的一部分铟吸附原子在直流电场下,沿电场方向发生迁移的现象——表面电致迁移。根据所观察到的表面电致迁移过程,可以把吸附在Si(111)面上的铟原子的结合状态分成两类:紧靠着硅表面的一个单原子层铟与硅表面结合牢固,几乎不受电场影响,称为紧固层;在紧固层以上的铟层易受电场影响而发生表面电致迁移,称为迁移层。从铟原子的表面电致迁移率与温度的关系,求得表面质量迁移的激活能为0.43eV。用表面电导测量研究了In-Si(111)界面形成过程中的电荷转移现象。结果表明,吸附在硅表面的铟原子形成表面深施主能级。导致表面电致迁移的力是离化了的铟原子在电场中所受到的库仑力。
Abstract: For the first time, we found by EHEED that a part of indium adatoms on the Si(lll) surface transports easily under the influence of an applied dc electric field. According to the observation of the surface electromigration process, it is shown that the states of adsorption of indium atoms on a clean Si (111) surface can be characterized as two phases - the first interface layer bound to silicon surface tightly is hardly affected by a electric field, it is called the tightly bound layer; overlayers on the first layer bound to the first interface layer loosely, can transport along the direction of an applied electric field, they are called transport layers. From the temperature dependence of the transport mobility, we find that the activation energy of surface electromigration is △H = 0.43 eV.The charge transfer in the process of In-Si(111) interface formation has been investigated by measurements of the surface conductance. The results show that indium atom is adsorbed as surface deep donor. Surface electromigration is attributed to Coulomb force applied on the ionized indium atom.
下载:
