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物理学报. 1988, 37(2): 301-304.
doi: 10.7498/aps.37.301.
碲镉汞辐射损伤的微观过程
- 收稿日期: 1986-09-05
- 修回日期: 1987-06-19
- 刊出日期: 1988-01-05
摘要: 利用高分辨率的电子显微技术,在原子和晶格尺度上,研究了碲镉汞晶体结构在大剂量高能电子作用下,晶体结构产生损伤、扩展和重构的过程。研究结果表明,碲镉汞结构损伤是在强电子束作用下,[(Hg,Cd)Te4]四面体的形变,在{111}面产生并沿{111}面呈阶梯形扩展的过程。从而在[110]方向观察到了新的更大周期的两维重构网格。
English Abstract
MICROCRYSTALLOGRAPHICAL PROCESS OF RADIATION DAMAGE IN Hg1-xCdx Te
- Received Date:
05 September 1986
- Accepted Date:
19 June 1987
- Published Online:
05 January 1988
Abstract: The process of the lattice damage and its development in the Hg1-xCdxTe crystal under electron irradiation with high dose and high energy have been studied at lattice level by high resolution electron microscopies. The results indicate that Hg1-x CdxTe lattice damage was caused by the deformation of the [(Hg, Cd)Te4] tetrahedra due to the strong electron irradiation. These deformations could be seen on the {111} plane and they developed along the {111} plane as steps. Moreover, a new superlattice with larger parameter of unit-cell was observed along the [110] direction.
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