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本文用Keating模型计算了Si1-xGex(x=0—1)作衬底、沿(100)方向生长的(Si)n/(Ge)n(n=1—6)应力超晶格的几何结构,并讨论了衬底对超晶格生长的影响,计算结果发现对于(Si)n/(Ge)n超晶格,用适当的Si1-xGex作衬底有利于超晶格的生长。The geometrical configurations of (100)-oriented (Si)n/(Ge)n (n = 1-6) strained superlat-tices on Si1-xGex(x = 0-1) substrates are calculated by using Keating model. The influence of substrate on the growth of the superlattices is discussed. The calculations indicate that proper choice of substrate Si1-xGex is beneficial to the growth of (Si)n/(Ge)n superlattices.
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