GaN光电阴极表面势垒对电子逸出几率的影响

杨永富; 富容国; 张益军; 王晓晖; 邹继军

doi:10.7498/aps.61.068501

摘要

针对GaN光电阴极表面势垒对电子逸出几率的影响问题,应用玻尓兹曼分布和基于Airy函数的传递矩阵法计算了GaN光电阴极的电子逸出几率,发现电子逸出几率主要由I势垒决定,II势垒对电子逸出几率的影响有限.利用自行研制的GaN光电阴极激活评估实验系统,测试了透射式GaN光电阴极样品的激活光电流.实验发现,Cs单独激活引起电子逸出几率的显著增加,而Cs单独充分激活后的Cs/O交替激活对电子逸出几率的影响有限.理论计算结果与激活光电流测试结果一致,其原因是Cs单独激活对降低真空能级的贡献远大于Cs/O共同激活.

关键词:

Abstract

Aiming to inverstigate the effect of surface potential barrier on electron escape probability of negative electron affinity GaN photocathode, the electron escape probability is calculated by using the Boltzmann distribution and the method of transfer matrix based on Airy function. It is found that barrier I is a key influencing factor of electron escape probability, while barrier II has a limited influence. The activation photocurrent curve of the transmission-mode GaN photocathode is measured by using our built activation and evaluation experimental system of NEA GaN photocathode. The obvious increase of electron escape probability can be achieved mainly by activating Cs only. The increase of electron escape probability is not large in Cs/O activation process with only Cs activated sufficiently. The theoretical calculations are in good agreement with the photocurrent curves from experimental test. The reason is that the contribution of activating only Cs to the reducing of vacuum level for obtaining NEA state is much larger than that of activating Cs/O.

Keywords:

作者及机构信息

1.
南京理工大学电子工程与光电技术学院, 南京 210094

通信作者: 富容国, frguo@mail.njust.edu.cn

基金项目: 国家自然科学基金(批准号: 60871012)资助的课题.

Authors and contacts

1.
Institute of Electronic Engineering and Optoelectronic Technology, Nanjing University of Science and Technology, Nanjing 210094, China

Corresponding author: Fu Rong-Guo, frguo@mail.njust.edu.cn

Funds: Project supported by the National Natural Science Foundation of China (Grant No. 60871012).

参考文献

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施引文献

[1]	Wang X H, Chang B K, Qian Y S, Gao P, Zhang Y J, Guo X Y, Du X Q 2011 Acta Phys. Sin. 60 047901 (in Chinese) [王晓晖, 常本康, 钱芸生, 高频, 张益军, 郭向阳, 杜晓晴 2011 物理学报 60 047901]
[2]	Wang X H, Chang B K, Ren L, Gao P 2011 Appl. Phys. Lett. 98 082109
[3]
[4]
[5]	Tripathi N, Bel L D, Nikzad S, Shahedipour S F 2010 Appl. Phys. Lett. 97 052107
[6]
[7]	Mizuno I, Nihashi T, Nagai T, Niigaki M, Shimizu Y, Shimano K, Katoh K, Ihara T, Okano K, Matsumoto M, Tachino M 2008 Proc. SPIE 6945 69451N1
[8]	Siegmund O, Vallerga J, McPhate J, Malloy J, Tremsin A, Martin A, Ulmer M, Wessels B 2006 Nucl. Instrum. Methods Phys. Res. Sect. A 567 89
[9]
[10]	Ulmer M P, Wessels W B, Shahedipour F, Korotkov R Y, Joseph C, Nihashi T 2001 Proc. SPIE 4288 246
[11]
[12]	Du X Q, Chang B K 2005 Appl. Surf. Sci. 251 267
[13]
[14]	Zou J J, Yang Z, Qiao J L 2008 J. Semicond. 29 1479
[15]
[16]	Qiao J L 2010 Ph. D. Dissertation (Nanjing: Nanjing University of Science and Technology) (in Chinese) [乔建良 2010 博士学位论文 (南京: 南京理工大学)]
[17]
[18]	Spicer W E, Herrera G A 1993 Proc. SPIE 2022 19
[19]
[20]	Fisher D G, Enstrom R E, Escher J S, Williams B F 1972 J. Appl. Phys. 43 3815
[21]
[22]
[23]	Vergara G, Herrera G A, Spicer W E 1999 Surf. Sci. 436 83
[24]	Escher J S, Schade H 1973 J. Appl. Phys. 44 5309
[25]
[26]	Bartelink D J, Moll J L, Meyer N L 1963 Phys. Rev. 130 972
[27]
[28]	Williams B F, Simon R E 1967 Phys. Rev. Lett. 18 485
[29]
[30]
[31]	Qiao J L, Niu J, Yang Z, Zou J J, Chang B K 2009 Opt. Technol. 35 145 (in Chinese) [乔建良, 牛军, 杨智, 邹继军, 常本康 2009 光学技术 35 145]
[32]
[33]	Machuca F 2003 Ph. D. Dissertation (Stanford: Stanford Univer-sity)
[34]
[35]	Lui W W, Fukuma M 1986 J. Appl. Phys. 60 1555
[36]	Qiao J L, Tian S, Chang B K, Du X Q, Gao P 2009 Acta Phys. Sin. 58 5847 (in Chinese) [乔建良, 田思, 常本康, 杜晓晴, 高频 2009 物理学报 58 5847]
[37]
[38]
[39]	Wang X H, Chang B K, Qian Y S, Gao P, Zhang Y J, Qiao J L, Du X Q 2011 Acta Phys. Sin. 60 057902 (in Chinese) [王晓晖, 常本康, 钱芸生, 高频, 张益军, 乔建良, 杜晓晴 2011 物理学报 60 057902]
[40]
[41]	Qiao J L, Chang B K, Qian Y S, Du X Q, Zhang Y J, Gao P, Wang X H, Guo X Y, Niu J, Gao Y T 2010 Acta Phys. Sin. 59 3577 (in Chinese) [乔建良, 常本康, 钱芸生, 杜晓晴, 张益军, 高频, 王晓晖, 郭向阳, 牛军, 高有堂 2010 物理学报 59 3577]
[42]	Qiao J L, Chang B K, Du X Q, Niu J, Zou J J 2010 Acta Phys. Sin. 59 2855 (in Chinese) [乔建良, 常本康, 杜晓晴, 牛军, 邹继军 2010 物理学报 59 2855]
[43]

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