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本文采用分子束外延方法制备出MnSi薄膜和MnSi1.7纳米线, 利用扫描隧道显微镜进行观察, 采用X射线光电子能谱仪系统地分析了MnSi薄膜和MnSi1.7纳米线的Mn 2p和Si 2p. 结果表明厚度为 ～0.9 nm的MnSi薄膜表面为√3 × √3重构, MnSi1.7纳米线长500—1500 nm, 宽16—18 nm, 高 ～ 3 nm. MnSi薄膜的Mn 2p1/2和Mn2p3/2峰位与MnSi1.7纳米线相同, 均分别为649.7 eV和638.7 eV. 结合能在640—645 eV和 ～653.8 eV处的锰氧化合物的Mn 2p3/2和Mn 2p1/2 峰证明在短暂暴露于空气中后MnSi薄膜和MnSi1.7纳米线表面有氧化层形成. 两种锰硅化合物Si 2p谱中向低结合能方向的化学位移表明随着锰硅化合物的形成, Si的化学环境发生了变化.
[1] Schmitt A L, Higgins J M, Szczech J R, Jin S 2010 J. Mater. Chem. 20 223
[2] Zhang Q, Takeguchi M, Tanaka M, Furuya K 2002 J. Cryst. Growth 237-239 1956
[3] Li W C, Zou Z Q, Wang D, Shi G M 2012 Acta Phys. Sin. 61 066801 (in Chinese) [李玮聪, 邹志强, 王丹, 石高明 2012 物理学报 61 066801]
[4] Zou Z Q, Li W C, Liang J M, Wang D 2011 Acta Mater. 59 7473
[5] Lian Y C, Chen L J 1986 Appl. Phys. Lett. 48 359
[6] Mahan J E 2004 Thin Solid Films 461 152
[7] Higgins J M, Schmitt A L, Guzei I A, Jin S 2008 J. Am. Chem. Soc. 130 16086
[8] Luo W H, Li H, Lin Z B, Tang X F 2010 Acta Phys. Sin. 59 8783 (in Chinese) [罗文辉, 李涵, 林泽冰, 唐新峰 2010 物理学报 59 8783]
[9] Petrova L I, Dudkin L D, Fedorov M I, Solomkin F Y, Zaitsev V K, Eremin I S 2002 Tech. Phys. 47 550
[10] Higashi S, Kocán P, Tochihara H 2009 Phys. Rev. B 79 205312
[11] Kumar A, Tallarida M, Hansmann M, Starke U, Horn K 2004 J. Phys. D: Appl. Phys. 37 1083
[12] Tatsuoka H, Koga T, Matsuda K, Nose Y, Souno Y, Kuwabara H, Brown P D, Humphreys C J 2001 Thin Solid Films 381 231
[13] Hou Q R, Zhao W, Chen Y B, He Y J 2008 Phys. Stat. Sol. (a) 205 2687
[14] Stevens M, He Z, Smith D J, Bennett P A 2003 J. Appl. Phys. 93 5670
[15] Zou Z Q, Wang H, Wang D, Wang Q K, Mao J J, Kong X Y 2007 Appl. Phys. Lett. 90 133111
[16] Zou Z Q, Li W C 2011 Phys. Lett. A 375 849
[17] Ohtsu N, Oku M, Nomura A, Sugawara T, Shishido T, Wagatsuma K 2008 Appl. Surf. Sci. 254 3288
[18] Audi A A, Sherwood P M A 2002 Surf. Interface Anal. 33 274
[19] Süzer S, Ertas N, Ataman O Y 1999 Appl. Spectrosc. 53 479
[20] Briggs D, Seach M P 1994 Practical Surface Analysis (Vol. 1) (Chichester: Wiley) p607
[21] Foord J S, Jackman R B, Allen G C 1984 Philos. Mag. A 49 657
[22] Martinez C, Cremer R, Neuschütz D, Richthofen A V 2002 Anal. Bioanal. Chem. 374 742
[23] Huang H Z 2007 Surface Chemical Analysis (Shanghai: East China University of Science and Technology Press) p20-21 (in Chinese) [黄惠忠 2007 表面化学分析 (上海: 华东理工大学出版社) 第20-21页]
[24] Zhang W, Xu F Q, Wang G D, Zhang W H, Li Z M, Wang L W, Chen T X 2011 Acta Phys. Sin. 60 017104 (in Chinese) [张旺, 徐法强, 王国栋, 张文华, 李宗木, 王立武, 陈铁锌 2011 物理学报 60 017104]
[25] Packard W E, Dow J D 1997 Phys. Rev. B 55 15643
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[1] Schmitt A L, Higgins J M, Szczech J R, Jin S 2010 J. Mater. Chem. 20 223
[2] Zhang Q, Takeguchi M, Tanaka M, Furuya K 2002 J. Cryst. Growth 237-239 1956
[3] Li W C, Zou Z Q, Wang D, Shi G M 2012 Acta Phys. Sin. 61 066801 (in Chinese) [李玮聪, 邹志强, 王丹, 石高明 2012 物理学报 61 066801]
[4] Zou Z Q, Li W C, Liang J M, Wang D 2011 Acta Mater. 59 7473
[5] Lian Y C, Chen L J 1986 Appl. Phys. Lett. 48 359
[6] Mahan J E 2004 Thin Solid Films 461 152
[7] Higgins J M, Schmitt A L, Guzei I A, Jin S 2008 J. Am. Chem. Soc. 130 16086
[8] Luo W H, Li H, Lin Z B, Tang X F 2010 Acta Phys. Sin. 59 8783 (in Chinese) [罗文辉, 李涵, 林泽冰, 唐新峰 2010 物理学报 59 8783]
[9] Petrova L I, Dudkin L D, Fedorov M I, Solomkin F Y, Zaitsev V K, Eremin I S 2002 Tech. Phys. 47 550
[10] Higashi S, Kocán P, Tochihara H 2009 Phys. Rev. B 79 205312
[11] Kumar A, Tallarida M, Hansmann M, Starke U, Horn K 2004 J. Phys. D: Appl. Phys. 37 1083
[12] Tatsuoka H, Koga T, Matsuda K, Nose Y, Souno Y, Kuwabara H, Brown P D, Humphreys C J 2001 Thin Solid Films 381 231
[13] Hou Q R, Zhao W, Chen Y B, He Y J 2008 Phys. Stat. Sol. (a) 205 2687
[14] Stevens M, He Z, Smith D J, Bennett P A 2003 J. Appl. Phys. 93 5670
[15] Zou Z Q, Wang H, Wang D, Wang Q K, Mao J J, Kong X Y 2007 Appl. Phys. Lett. 90 133111
[16] Zou Z Q, Li W C 2011 Phys. Lett. A 375 849
[17] Ohtsu N, Oku M, Nomura A, Sugawara T, Shishido T, Wagatsuma K 2008 Appl. Surf. Sci. 254 3288
[18] Audi A A, Sherwood P M A 2002 Surf. Interface Anal. 33 274
[19] Süzer S, Ertas N, Ataman O Y 1999 Appl. Spectrosc. 53 479
[20] Briggs D, Seach M P 1994 Practical Surface Analysis (Vol. 1) (Chichester: Wiley) p607
[21] Foord J S, Jackman R B, Allen G C 1984 Philos. Mag. A 49 657
[22] Martinez C, Cremer R, Neuschütz D, Richthofen A V 2002 Anal. Bioanal. Chem. 374 742
[23] Huang H Z 2007 Surface Chemical Analysis (Shanghai: East China University of Science and Technology Press) p20-21 (in Chinese) [黄惠忠 2007 表面化学分析 (上海: 华东理工大学出版社) 第20-21页]
[24] Zhang W, Xu F Q, Wang G D, Zhang W H, Li Z M, Wang L W, Chen T X 2011 Acta Phys. Sin. 60 017104 (in Chinese) [张旺, 徐法强, 王国栋, 张文华, 李宗木, 王立武, 陈铁锌 2011 物理学报 60 017104]
[25] Packard W E, Dow J D 1997 Phys. Rev. B 55 15643
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