Si衬底上生长的MnSi薄膜和MnSi1.7 纳米线的STM和XPS分析

石高明; 邹志强; 孙立民; 李玮聪; 刘晓勇

doi:10.7498/aps.61.227301

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摘要

本文采用分子束外延方法制备出MnSi薄膜和MnSi1.7纳米线, 利用扫描隧道显微镜进行观察, 采用X射线光电子能谱仪系统地分析了MnSi薄膜和MnSi1.7纳米线的Mn 2p和Si 2p. 结果表明厚度为～0.9 nm的MnSi薄膜表面为√3 × √3重构, MnSi1.7纳米线长500—1500 nm, 宽16—18 nm, 高～ 3 nm. MnSi薄膜的Mn 2p1/2和Mn2p3/2峰位与MnSi1.7纳米线相同, 均分别为649.7 eV和638.7 eV. 结合能在640—645 eV和～653.8 eV处的锰氧化合物的Mn 2p3/2和Mn 2p1/2 峰证明在短暂暴露于空气中后MnSi薄膜和MnSi1.7纳米线表面有氧化层形成. 两种锰硅化合物Si 2p谱中向低结合能方向的化学位移表明随着锰硅化合物的形成, Si的化学环境发生了变化.

关键词:

作者及机构信息

1.
上海交通大学分析测试中心, 上海 200240;

2.
上海交通大学物理系, 上海 200240

基金项目: 国家自然科学基金 (批准号: 61176017) 和上海市教育委员会科研创新项目 (批准号: 12ZZ025) 资助的课题.

参考文献

[1]	Schmitt A L, Higgins J M, Szczech J R, Jin S 2010 J. Mater. Chem. 20 223
[2]	Zhang Q, Takeguchi M, Tanaka M, Furuya K 2002 J. Cryst. Growth 237-239 1956
[3]	Li W C, Zou Z Q, Wang D, Shi G M 2012 Acta Phys. Sin. 61 066801 (in Chinese) [李玮聪, 邹志强, 王丹, 石高明 2012 物理学报 61 066801]
[4]	Zou Z Q, Li W C, Liang J M, Wang D 2011 Acta Mater. 59 7473
[5]	Lian Y C, Chen L J 1986 Appl. Phys. Lett. 48 359
[6]	Mahan J E 2004 Thin Solid Films 461 152
[7]	Higgins J M, Schmitt A L, Guzei I A, Jin S 2008 J. Am. Chem. Soc. 130 16086
[8]	Luo W H, Li H, Lin Z B, Tang X F 2010 Acta Phys. Sin. 59 8783 (in Chinese) [罗文辉, 李涵, 林泽冰, 唐新峰 2010 物理学报 59 8783]
[9]	Petrova L I, Dudkin L D, Fedorov M I, Solomkin F Y, Zaitsev V K, Eremin I S 2002 Tech. Phys. 47 550
[10]	Higashi S, Kocán P, Tochihara H 2009 Phys. Rev. B 79 205312
[11]	Kumar A, Tallarida M, Hansmann M, Starke U, Horn K 2004 J. Phys. D: Appl. Phys. 37 1083
[12]	Tatsuoka H, Koga T, Matsuda K, Nose Y, Souno Y, Kuwabara H, Brown P D, Humphreys C J 2001 Thin Solid Films 381 231
[13]	Hou Q R, Zhao W, Chen Y B, He Y J 2008 Phys. Stat. Sol. (a) 205 2687
[14]	Stevens M, He Z, Smith D J, Bennett P A 2003 J. Appl. Phys. 93 5670
[15]	Zou Z Q, Wang H, Wang D, Wang Q K, Mao J J, Kong X Y 2007 Appl. Phys. Lett. 90 133111
[16]	Zou Z Q, Li W C 2011 Phys. Lett. A 375 849
[17]	Ohtsu N, Oku M, Nomura A, Sugawara T, Shishido T, Wagatsuma K 2008 Appl. Surf. Sci. 254 3288
[18]	Audi A A, Sherwood P M A 2002 Surf. Interface Anal. 33 274
[19]	Süzer S, Ertas N, Ataman O Y 1999 Appl. Spectrosc. 53 479
[20]	Briggs D, Seach M P 1994 Practical Surface Analysis (Vol. 1) (Chichester: Wiley) p607
[21]	Foord J S, Jackman R B, Allen G C 1984 Philos. Mag. A 49 657
[22]	Martinez C, Cremer R, Neuschütz D, Richthofen A V 2002 Anal. Bioanal. Chem. 374 742
[23]	Huang H Z 2007 Surface Chemical Analysis (Shanghai: East China University of Science and Technology Press) p20-21 (in Chinese) [黄惠忠 2007 表面化学分析 (上海: 华东理工大学出版社) 第20-21页]
[24]	Zhang W, Xu F Q, Wang G D, Zhang W H, Li Z M, Wang L W, Chen T X 2011 Acta Phys. Sin. 60 017104 (in Chinese) [张旺, 徐法强, 王国栋, 张文华, 李宗木, 王立武, 陈铁锌 2011 物理学报 60 017104]
[25]	Packard W E, Dow J D 1997 Phys. Rev. B 55 15643

施引文献

[1]	Schmitt A L, Higgins J M, Szczech J R, Jin S 2010 J. Mater. Chem. 20 223
[2]	Zhang Q, Takeguchi M, Tanaka M, Furuya K 2002 J. Cryst. Growth 237-239 1956
[3]	Li W C, Zou Z Q, Wang D, Shi G M 2012 Acta Phys. Sin. 61 066801 (in Chinese) [李玮聪, 邹志强, 王丹, 石高明 2012 物理学报 61 066801]
[4]	Zou Z Q, Li W C, Liang J M, Wang D 2011 Acta Mater. 59 7473
[5]	Lian Y C, Chen L J 1986 Appl. Phys. Lett. 48 359
[6]	Mahan J E 2004 Thin Solid Films 461 152
[7]	Higgins J M, Schmitt A L, Guzei I A, Jin S 2008 J. Am. Chem. Soc. 130 16086
[8]	Luo W H, Li H, Lin Z B, Tang X F 2010 Acta Phys. Sin. 59 8783 (in Chinese) [罗文辉, 李涵, 林泽冰, 唐新峰 2010 物理学报 59 8783]
[9]	Petrova L I, Dudkin L D, Fedorov M I, Solomkin F Y, Zaitsev V K, Eremin I S 2002 Tech. Phys. 47 550
[10]	Higashi S, Kocán P, Tochihara H 2009 Phys. Rev. B 79 205312
[11]	Kumar A, Tallarida M, Hansmann M, Starke U, Horn K 2004 J. Phys. D: Appl. Phys. 37 1083
[12]	Tatsuoka H, Koga T, Matsuda K, Nose Y, Souno Y, Kuwabara H, Brown P D, Humphreys C J 2001 Thin Solid Films 381 231
[13]	Hou Q R, Zhao W, Chen Y B, He Y J 2008 Phys. Stat. Sol. (a) 205 2687
[14]	Stevens M, He Z, Smith D J, Bennett P A 2003 J. Appl. Phys. 93 5670
[15]	Zou Z Q, Wang H, Wang D, Wang Q K, Mao J J, Kong X Y 2007 Appl. Phys. Lett. 90 133111
[16]	Zou Z Q, Li W C 2011 Phys. Lett. A 375 849
[17]	Ohtsu N, Oku M, Nomura A, Sugawara T, Shishido T, Wagatsuma K 2008 Appl. Surf. Sci. 254 3288
[18]	Audi A A, Sherwood P M A 2002 Surf. Interface Anal. 33 274
[19]	Süzer S, Ertas N, Ataman O Y 1999 Appl. Spectrosc. 53 479
[20]	Briggs D, Seach M P 1994 Practical Surface Analysis (Vol. 1) (Chichester: Wiley) p607
[21]	Foord J S, Jackman R B, Allen G C 1984 Philos. Mag. A 49 657
[22]	Martinez C, Cremer R, Neuschütz D, Richthofen A V 2002 Anal. Bioanal. Chem. 374 742
[23]	Huang H Z 2007 Surface Chemical Analysis (Shanghai: East China University of Science and Technology Press) p20-21 (in Chinese) [黄惠忠 2007 表面化学分析 (上海: 华东理工大学出版社) 第20-21页]
[24]	Zhang W, Xu F Q, Wang G D, Zhang W H, Li Z M, Wang L W, Chen T X 2011 Acta Phys. Sin. 60 017104 (in Chinese) [张旺, 徐法强, 王国栋, 张文华, 李宗木, 王立武, 陈铁锌 2011 物理学报 60 017104]
[25]	Packard W E, Dow J D 1997 Phys. Rev. B 55 15643

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Si衬底上生长的MnSi薄膜和MnSi1.7 纳米线的STM和XPS分析

1. 上海交通大学分析测试中心, 上海 200240;

2. 上海交通大学物理系, 上海 200240

基金项目:

国家自然科学基金 (批准号: 61176017) 和上海市教育委员会科研创新项目 (批准号: 12ZZ025) 资助的课题.

收稿日期: 2012-04-28

修回日期: 2012-06-14

刊出日期: 2012-11-05

摘要: 本文采用分子束外延方法制备出MnSi薄膜和MnSi1.7纳米线, 利用扫描隧道显微镜进行观察, 采用X射线光电子能谱仪系统地分析了MnSi薄膜和MnSi1.7纳米线的Mn 2p和Si 2p. 结果表明厚度为～0.9 nm的MnSi薄膜表面为√3 × √3重构, MnSi1.7纳米线长500—1500 nm, 宽16—18 nm, 高～ 3 nm. MnSi薄膜的Mn 2p1/2和Mn2p3/2峰位与MnSi1.7纳米线相同, 均分别为649.7 eV和638.7 eV. 结合能在640—645 eV和～653.8 eV处的锰氧化合物的Mn 2p3/2和Mn 2p1/2 峰证明在短暂暴露于空气中后MnSi薄膜和MnSi1.7纳米线表面有氧化层形成. 两种锰硅化合物Si 2p谱中向低结合能方向的化学位移表明随着锰硅化合物的形成, Si的化学环境发生了变化.

关键词:

Scanning tunneling mircroscopy and X-ray photoelectron spectroscopy studies of MnSi film and MnSi1.7 nanowires grown on Si substrates

1.
Instrumental Analysis Center, Shanghai Jiaotong University, Shanghai 200240, China;

2.
Department of Physics, Shanghai Jiaotong University, Shanghai 200240, China

Fund Project:

Project supported by the National Natural Science Foundation of China (Grant No. 61176017) and the Innovation Program of Shanghai Municipal Education Commission, China (Grant No. 12ZZ025).

Received Date: 28 April 2012

Accepted Date: 14 June 2012

Published Online: 05 November 2012

Abstract: Manganese silicides are promising industrial materials in optoelectronics and microelectronics fields. The study of electronic structures of manganese silicide film and nanowires is essential for a deeper understanding of their properties. In this paper, MnSi film and MnSi1.7 nanowires are prepared by molecular beam epitaxy method, and then observed by scanning tunneling microscopy (STM). The Mn 2p and Si 2p of MnSi film and MnSi1.7 nanowires are comprehensively studied using X-ray photoelectron spectroscopy (XPS). The results demonstrate that MnSi film with ～ 0.9 nm high is √3 × √3 reconstruction, and that the MnSi1.7 nanowires are about ～ 3 nm high, 16—18 nm wide and 500—1500 nm long. The binding energies of the Mn 2p1/2 level and Mn 2p3/2 level for MnSi film are 649.7 and 638.7 eV, respectively, which coincide with those of MnSi1.7 nanowires. The Mn 2p3/2 and Mn 2p1/2 peaks which are located at 640—645 eV and ～653.8 eV indicate that an oxide layer formed on the surfaces of film and nanowires because of short-time exposure to the atmosphere. The negative chemical shifts for MnSi film and MnSi1.7 nanowires from Si2p spectra indicate that with the formation of manganese silicides, the chemical state of Si is changed.

Keywords:

X-ray photoelectron spectroscopy (XPS) /
scanning tunneling microscopy (STM) /
nanowires /
film

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