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The total dose effect of 0.8 μm SOI NMOS device with H-gate is analyzed. The device is exposed to 60Co γ-ray at low dose rate. The result shows that the irradiation effect is more serious at low dose rate for the same total irradiation dose. The threshold voltage shift in on state is lower than in off state. Irradiation leads to the increased drain voltage VD of kink effect. Because the number of effective interface traps varies with gate bias, interface trap has different influences on sub-threshold slope and transconductance.
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Keywords:
- low dose rate /
- total dose effect /
- kink effect /
- transconductance
[1] Schwank J R, Ferlet-Cavrois V, Shaneyfelt M R, Fleetwood D M, Paillet P, Dodd P E 2003 IEEE Trans. Nucl. Sci. 50 522
[2] Adell P C, Barnaby H J, Schrimpf R D, Vermeir B 2007 IEEE Trans. Nucl. Sci. 54 2174
[3] Liu Z L, Hu Z X, Zhang Z X, Shao H, Ning B X, Bi D W, Chen M, Zou S C 2011 Acta Phys. Sin. 60 116013 (in Chinese) [刘张李, 胡志远, 张正选, 邵华, 宁冰旭, 毕大炜, 陈明, 邹世昌 2011 物理学报 60 116013]
[4] Jun B, Fleetwood D M, Schrimpf R D, Zhou X, Montes E J, Cristoloveanu S 2003 IEEE Trans. Nucl. Sci. 50 1891
[5] Flament O, Torres A, Ferlet-Cavrois V 2003 IEEE Trans. Nucl. Sci. 50 2316
[6] Schwank J R, Shaneyfelt M R, Fleetwood D M, Felix J A, Dodd P E, Paillet P, V Ferlet-Cavrois V 2008 IEEE Trans. Nucl. Sci. 55 1842
[7] Torres A, Flament O 2002 IEEE Trans. Nucl. Sci.49 1462
[8] Huang R, Zhang G Y, Li Y X, Zhang X 2005 SOI CMOS Technology and Its Application (Beijing: Science Press) p179 (in Chinese) [黄如, 张国艳, 李映雪, 张兴 2005 SOI CMOS 技术及其应用 (北京: 科学出版社) 第179页]
[9] Saks N S, Klein R B, Griscom D L 1988 IEEE Trans. Nucl. Sci. 35 1234
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[1] Schwank J R, Ferlet-Cavrois V, Shaneyfelt M R, Fleetwood D M, Paillet P, Dodd P E 2003 IEEE Trans. Nucl. Sci. 50 522
[2] Adell P C, Barnaby H J, Schrimpf R D, Vermeir B 2007 IEEE Trans. Nucl. Sci. 54 2174
[3] Liu Z L, Hu Z X, Zhang Z X, Shao H, Ning B X, Bi D W, Chen M, Zou S C 2011 Acta Phys. Sin. 60 116013 (in Chinese) [刘张李, 胡志远, 张正选, 邵华, 宁冰旭, 毕大炜, 陈明, 邹世昌 2011 物理学报 60 116013]
[4] Jun B, Fleetwood D M, Schrimpf R D, Zhou X, Montes E J, Cristoloveanu S 2003 IEEE Trans. Nucl. Sci. 50 1891
[5] Flament O, Torres A, Ferlet-Cavrois V 2003 IEEE Trans. Nucl. Sci. 50 2316
[6] Schwank J R, Shaneyfelt M R, Fleetwood D M, Felix J A, Dodd P E, Paillet P, V Ferlet-Cavrois V 2008 IEEE Trans. Nucl. Sci. 55 1842
[7] Torres A, Flament O 2002 IEEE Trans. Nucl. Sci.49 1462
[8] Huang R, Zhang G Y, Li Y X, Zhang X 2005 SOI CMOS Technology and Its Application (Beijing: Science Press) p179 (in Chinese) [黄如, 张国艳, 李映雪, 张兴 2005 SOI CMOS 技术及其应用 (北京: 科学出版社) 第179页]
[9] Saks N S, Klein R B, Griscom D L 1988 IEEE Trans. Nucl. Sci. 35 1234
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