热处理对制备辉光放电聚合物薄膜结构及光学性能的影响

贾晓琴; 何智兵; 牛忠彩; 何小珊; 韦建军; 李蕊; 杜凯

doi:10.7498/aps.62.056804

摘要

利用低压等离子体聚合技术制备了约5 m的辉光放电聚合物薄膜, 将所制备的样品放入热处理炉中通入氩气保护, 分别在280 ℃, 300 ℃, 320 ℃, 340 ℃进行热处理. 对热处理后的样品采用傅里叶变换红外吸收光谱(FT-IR)分析了不同热处理温度对薄膜结构的影响. 对CH振动区进行了分峰高斯拟合, 定量的分析了个官能团的变化. 利用紫外可见光谱仪分析了热处理前后薄膜在紫外可见光区域内光学透过率及光学带隙的变化. 结果表明: 随着热处理温度的升高,薄膜中H含量减少, 薄膜中甲基相对含量减少, 而双键、芳香环结构相对含量增加, 在600 nm以后的可见光区, 薄膜的透过率减小. 薄膜光透过率的截止波长红移, 光学带隙减小.

关键词:

Abstract

The glow discharge polymer (GDP) films each with a thickness of about 5 m are deposited by low-pressure plasma polymer apparatus. The GDP films are heat-treated at different tempertures of 280, 300, 320 and 340 ℃ in Ar atmosphere. The influence of heat treatment on the structure of GDP film is characterized by FT-IR. The optical transparency and optical band of GDP film are investigated by UV-VIS spectrum. The results show that with temperature increasing, the relative content of CH3 decreases, while the relative content values of CH2 and CH increase. The H content in GDP film decreases. The optical band gap decreases, and the transmittance in a range of more than 600nm decreases too.

Keywords:

作者及机构信息

1.
四川大学, 原子与分子物理研究所, 成都 610065;

2.
中国工程物理研究院, 激光聚变研究中心, 绵阳 621900

Authors and contacts

1.
Sichuan University, Institute of Atomic and Molecular Physics, Chengdu 610065, China;

2.
The Centre of Laser Fusion Research, China Academy of Engineering Physics, Mianyang 621900, China

参考文献

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[2]	Wmcquillan B, Nikroo A, Steinman D A, Elsner F H, Czechowicz D G, Hoppe M L, Sixtus M, Miller W J 1996 General Atomics Rport GA-A22494
[3]	Yian J C, He Z B, Yang Z L, Chen Z M, Tang Y J, Wei J J 2010 Acta Phys. Sin. 59 8005 (in Chinese) [闫建成, 何智兵, 陈志梅, 唐永建, 韦建军 2010 物理学报 59 8005]
[4]	Hoppe M L, Sr, Steinman D A 2007 General Atomics Report GA-A 25664
[5]	Li H X, Xu T, Wang C W, Chen J M, Zhou H D, Liu H W 2006 Thin Solid Films 515 2153
[6]	Ristein J, Stief R T, Ley L 1998 Journal of Applied Physics 84 3836
[7]	Kim M H, Lee J Y 1991 Journal of Materials Science 26 4787
[8]	Bounouh Y, Theye M L, Dehbi-Alaoui A, Matthews A, Stoquert J P 1995 Phys. Rev. B 51 9597
[9]	Qing Zhang, Yoon S F, Rusli, Yang H, Ahn J 1998 J. Appl. Phys. 83 1349
[10]	Czechowicz D G, Castillo E R, Nikroo A 2002 General Atomics Report GA-A 23753
[11]	Li H X, Xu T, Wang C B, Chen J M, Zhou H D, Liu H W 2006 Thin Solid Films 515 2155
[12]	Kim M H, Lee J Y 1991 Journal of Materials Science 26 4787
[13]	Jiang X, Beyer W, Reichelt K 1990 J. Appl. Phys. 68 1378
[14]	Veres M , Koos M, Pocsik I 2002 Diamond and Related Materials 11 1110
[15]	Piazza F, Golanski A, Schulze S, etal 2003 Appl. Phys. Lett.82 358
[16]	Kim M H, Lee J Y 1991 Journal of Materials SciencePhysics 26 4787
[17]	Liu D P, Yu S H J, Ma T C 2000 Chinese Journal of Materials Research 14 555 (in Chinese) [刘东平, 俞世吉, 马腾才 2000 材料研究学报 14 555]
[18]	Johnc C Angus 1992 Thin Solid Films 216 126
[19]	Ding W Y, Wang H L, Ju D Y, Cai W P 2011 Acta Phys. Sin. 60 028105 (in Chinese) [丁万昱, 王华林, 巨东英, 蔡卫平物理学报 2011 60 028105]
[20]	Zeng L G, Liu F M, Zhong W F, Ding P, Cai L G 2011 Acta Phys. Sin. 60 038203 (in Chinese) [ 曾乐贵, 刘发民, 钟文武, 丁芃, 蔡鲁刚, 周船仓 2011 物理学报 60 038203]
[21]	Ye C, Ning Z Y, Cheng S H, Wang X Y 2002 Acta Phys. Sin. 51 2041 (in Chinese) [叶超, 宁兆元, 程珊华, 王响英 2002 物理学报 51 2041]

施引文献

[1]	Zhang B L, He Z B, Wu W D, Liu X H, Yang X D 2009 Acta Phys. Sin. 58 4636 (in Chinese) [张宝玲, 何智兵, 吴卫, 刘兴华, 杨向东 2009 物理学报 58 6436]
[2]	Wmcquillan B, Nikroo A, Steinman D A, Elsner F H, Czechowicz D G, Hoppe M L, Sixtus M, Miller W J 1996 General Atomics Rport GA-A22494
[3]	Yian J C, He Z B, Yang Z L, Chen Z M, Tang Y J, Wei J J 2010 Acta Phys. Sin. 59 8005 (in Chinese) [闫建成, 何智兵, 陈志梅, 唐永建, 韦建军 2010 物理学报 59 8005]
[4]	Hoppe M L, Sr, Steinman D A 2007 General Atomics Report GA-A 25664
[5]	Li H X, Xu T, Wang C W, Chen J M, Zhou H D, Liu H W 2006 Thin Solid Films 515 2153
[6]	Ristein J, Stief R T, Ley L 1998 Journal of Applied Physics 84 3836
[7]	Kim M H, Lee J Y 1991 Journal of Materials Science 26 4787
[8]	Bounouh Y, Theye M L, Dehbi-Alaoui A, Matthews A, Stoquert J P 1995 Phys. Rev. B 51 9597
[9]	Qing Zhang, Yoon S F, Rusli, Yang H, Ahn J 1998 J. Appl. Phys. 83 1349
[10]	Czechowicz D G, Castillo E R, Nikroo A 2002 General Atomics Report GA-A 23753
[11]	Li H X, Xu T, Wang C B, Chen J M, Zhou H D, Liu H W 2006 Thin Solid Films 515 2155
[12]	Kim M H, Lee J Y 1991 Journal of Materials Science 26 4787
[13]	Jiang X, Beyer W, Reichelt K 1990 J. Appl. Phys. 68 1378
[14]	Veres M , Koos M, Pocsik I 2002 Diamond and Related Materials 11 1110
[15]	Piazza F, Golanski A, Schulze S, etal 2003 Appl. Phys. Lett.82 358
[16]	Kim M H, Lee J Y 1991 Journal of Materials SciencePhysics 26 4787
[17]	Liu D P, Yu S H J, Ma T C 2000 Chinese Journal of Materials Research 14 555 (in Chinese) [刘东平, 俞世吉, 马腾才 2000 材料研究学报 14 555]
[18]	Johnc C Angus 1992 Thin Solid Films 216 126
[19]	Ding W Y, Wang H L, Ju D Y, Cai W P 2011 Acta Phys. Sin. 60 028105 (in Chinese) [丁万昱, 王华林, 巨东英, 蔡卫平物理学报 2011 60 028105]
[20]	Zeng L G, Liu F M, Zhong W F, Ding P, Cai L G 2011 Acta Phys. Sin. 60 038203 (in Chinese) [ 曾乐贵, 刘发民, 钟文武, 丁芃, 蔡鲁刚, 周船仓 2011 物理学报 60 038203]
[21]	Ye C, Ning Z Y, Cheng S H, Wang X Y 2002 Acta Phys. Sin. 51 2041 (in Chinese) [叶超, 宁兆元, 程珊华, 王响英 2002 物理学报 51 2041]

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