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摘要: 用Monte Carlo方法模拟了GaAs(001)面的邻晶面上的分子束外延的生长过程,模拟的基本模型是常用的SOS模型,结果显示在A类邻晶面上二维成核模式起主委作用,但在B类邻晶面低温下是二维成核模式起主要作用,但在高温下台阶成核模式成了主要的成核模式.另外在高温和低温下都存在成核原子数的饱和现象.
Abstract: In this paper the MBE nucleation mode on vicinal GaAs(001)surface is simu-lated by Monte Carlo method. The results show that on A-surface the 2-dimension nucleation mode is dominant at 800-1000K. On B-surface the 2-dimension nucleation mode is dominant at low temperatures, but at high temperatures the step flow mode is dominant. And at both high and low temperature, there is a saturation phenomenon.