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物理学报. 1994, 43(7): 1118-1122.
doi: 10.7498/aps.43.1118.
GaAs分子束外延生长的Monte Carlo模拟
- 收稿日期: 1993-07-08
- 刊出日期: 1994-07-20
摘要: 用Ｍｏｎｔｅ Ｃａｒｌｏ方法模拟了ＧａＡｓ（００１）面的邻晶面上的分子束外延的生长过程，模拟的基本模型是常用的ＳＯＳ模型，结果显示在Ａ类邻晶面上二维成核模式起主委作用，但在Ｂ类邻晶面低温下是二维成核模式起主要作用，但在高温下台阶成核模式成了主要的成核模式．另外在高温和低温下都存在成核原子数的饱和现象．
English Abstract
MONTE CARLO SIMULATION OF MBE GROWTH ON GaAs VICINAL SURFACE
- Received Date:
08 July 1993
- Published Online:
20 July 1994
Abstract: In this paper the MBE nucleation mode on vicinal GaAs(001)surface is simu-lated by Monte Carlo method. The results show that on A-surface the 2-dimension nucleation mode is dominant at 800-1000K. On B-surface the 2-dimension nucleation mode is dominant at low temperatures, but at high temperatures the step flow mode is dominant. And at both high and low temperature, there is a saturation phenomenon.
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