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A theoretical model for the noise is derived in this paper to characterize the influence of the noise on quantum dot infrared photodetectors. In this model, the noise current is estimated with the consideration of the common influence of the nanoscale electron transport and microscale electron transport on the activation energy and the contribution of the noise gain. The obtained results show a good agreement with the published experimental values, which illustrates the validity of the model.
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Keywords:
- electron transport /
- dark current /
- gain /
- noise
[1] LU W, Liu H, Zhen H, Li N, Xiong D, Zhou X 2005 Chin. Phys. Lett. 22 1806
[2] Liu Y, Yu Z, Jia B, Xu Z, Yao W, Chen Z, Lu P, Han L 2009 Chin. Phys. B 18 4667
[3] Huo Y, Ma W, Zhang Y, Huang J, Wei Y, Cui K, Chen L 2011 Acta. Phys. Sin. 60 098401 (in Chineses) [霍永恒, 马文全, 张艳华, 黄建亮, 卫炀, 崔凯, 陈良惠 2011 物理学报 60 098401]
[4] Liu H, Zhang J 2012 Appl. Optics 51 2767
[5] Liu Y A, Zhuang Y Q, Du L, Su Y H 2013 Acta Phys. Sin. 62 140703 (in Chineses) [刘宇安, 庄奕琪, 杜磊, 苏亚慧 2013 物理学报 62 140703]
[6] An X, Li Y, Liu J 2007 Acta Phys. Sin. 56 4105 (in Chinese) [安兴涛, 李玉现, 刘建军 2007 物理学报 56 4105]
[7] Liu H, Zhang J 2012 Infrared Phys. Techn. 55 320
[8] Martyniuk P, Rogalski A 2009 B Pol. Acad. Sci-Tech. 57 103
[9] Ryzhii V, Khmyrova I, Pipa V, Mitin V, Willander M 2001 Semicond Sci. Technol. 16 331
[10] Asano T, Madhukar A, Mahalingam K, Brown G J 2008 J. Appl. Phys. 104 13115
[11] Lin S, Tsai Y J, Lee S C 2013 Appl. Phys. Lett. 83 752
[12] Ye Z, Campell J C, Chen Z, Kim E T, Madhukar A 2002 IEEE J Quantum Elect. 38 1234
[13] Zhao Z Y, Yi C, Lantz K R, Stiff-Roberts A D 2007 Appl. Phys. Lett. 90 233511
[14] Lin L, Zhen H L, Li N, Lu W, Weng Q C, Xiong D Y, Liu F Q 2010 Appl. Phys. Lett. 97 193511
[15] Liu H, Zhang J 2012 Opt. Laser Technol. 44 1536
[16] Lim H, Movaghar B, Tsao S, Taguchi M, Zhang W, Quivy A A, Razeghi M 2006 Phys. Rev. B 74 205321
[17] Liu H C 2003 Opto-electron Rev. 11 1
[18] Liu H C 2002 Semiconduct Semimet 62 126
[19] Carbone A, Introzzi R, Liu H C 2009 Infrared Phys. Techn. 52 260
[20] Lim H, Zhang W, Tsao S, Sills T, Szafraniec J, Mi K, Movaghar B, Razeghi M 2005 Phys. Rev. B 72 0853321
[21] Li S S, Xia J B, Yuan Z L, Xu Z Y, Ge W, Wang X R, Wang Y, Wang J, Chang L L 1996 Phys. Rev. B 54 575
[22] Kim E, Madhukar A, Ye Z,Campbell J 2004 Appl. Phys. Lett. 84 3277
[23] Wang S Y, Lin S D, Wu H W, Lee C P 2001 Appl. Phys. Lett. 78 1023
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[1] LU W, Liu H, Zhen H, Li N, Xiong D, Zhou X 2005 Chin. Phys. Lett. 22 1806
[2] Liu Y, Yu Z, Jia B, Xu Z, Yao W, Chen Z, Lu P, Han L 2009 Chin. Phys. B 18 4667
[3] Huo Y, Ma W, Zhang Y, Huang J, Wei Y, Cui K, Chen L 2011 Acta. Phys. Sin. 60 098401 (in Chineses) [霍永恒, 马文全, 张艳华, 黄建亮, 卫炀, 崔凯, 陈良惠 2011 物理学报 60 098401]
[4] Liu H, Zhang J 2012 Appl. Optics 51 2767
[5] Liu Y A, Zhuang Y Q, Du L, Su Y H 2013 Acta Phys. Sin. 62 140703 (in Chineses) [刘宇安, 庄奕琪, 杜磊, 苏亚慧 2013 物理学报 62 140703]
[6] An X, Li Y, Liu J 2007 Acta Phys. Sin. 56 4105 (in Chinese) [安兴涛, 李玉现, 刘建军 2007 物理学报 56 4105]
[7] Liu H, Zhang J 2012 Infrared Phys. Techn. 55 320
[8] Martyniuk P, Rogalski A 2009 B Pol. Acad. Sci-Tech. 57 103
[9] Ryzhii V, Khmyrova I, Pipa V, Mitin V, Willander M 2001 Semicond Sci. Technol. 16 331
[10] Asano T, Madhukar A, Mahalingam K, Brown G J 2008 J. Appl. Phys. 104 13115
[11] Lin S, Tsai Y J, Lee S C 2013 Appl. Phys. Lett. 83 752
[12] Ye Z, Campell J C, Chen Z, Kim E T, Madhukar A 2002 IEEE J Quantum Elect. 38 1234
[13] Zhao Z Y, Yi C, Lantz K R, Stiff-Roberts A D 2007 Appl. Phys. Lett. 90 233511
[14] Lin L, Zhen H L, Li N, Lu W, Weng Q C, Xiong D Y, Liu F Q 2010 Appl. Phys. Lett. 97 193511
[15] Liu H, Zhang J 2012 Opt. Laser Technol. 44 1536
[16] Lim H, Movaghar B, Tsao S, Taguchi M, Zhang W, Quivy A A, Razeghi M 2006 Phys. Rev. B 74 205321
[17] Liu H C 2003 Opto-electron Rev. 11 1
[18] Liu H C 2002 Semiconduct Semimet 62 126
[19] Carbone A, Introzzi R, Liu H C 2009 Infrared Phys. Techn. 52 260
[20] Lim H, Zhang W, Tsao S, Sills T, Szafraniec J, Mi K, Movaghar B, Razeghi M 2005 Phys. Rev. B 72 0853321
[21] Li S S, Xia J B, Yuan Z L, Xu Z Y, Ge W, Wang X R, Wang Y, Wang J, Chang L L 1996 Phys. Rev. B 54 575
[22] Kim E, Madhukar A, Ye Z,Campbell J 2004 Appl. Phys. Lett. 84 3277
[23] Wang S Y, Lin S D, Wu H W, Lee C P 2001 Appl. Phys. Lett. 78 1023
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