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[1] LU W, Liu H, Zhen H, Li N, Xiong D, Zhou X 2005 Chin. Phys. Lett. 22 1806
[2] Liu Y, Yu Z, Jia B, Xu Z, Yao W, Chen Z, Lu P, Han L 2009 Chin. Phys. B 18 4667
[3] Huo Y, Ma W, Zhang Y, Huang J, Wei Y, Cui K, Chen L 2011 Acta. Phys. Sin. 60 098401 (in Chineses) [霍永恒, 马文全, 张艳华, 黄建亮, 卫炀, 崔凯, 陈良惠 2011 物理学报 60 098401]
[4] Liu H, Zhang J 2012 Appl. Optics 51 2767
[5] Liu Y A, Zhuang Y Q, Du L, Su Y H 2013 Acta Phys. Sin. 62 140703 (in Chineses) [刘宇安, 庄奕琪, 杜磊, 苏亚慧 2013 物理学报 62 140703]
[6] An X, Li Y, Liu J 2007 Acta Phys. Sin. 56 4105 (in Chinese) [安兴涛, 李玉现, 刘建军 2007 物理学报 56 4105]
[7] Liu H, Zhang J 2012 Infrared Phys. Techn. 55 320
[8] Martyniuk P, Rogalski A 2009 B Pol. Acad. Sci-Tech. 57 103
[9] Ryzhii V, Khmyrova I, Pipa V, Mitin V, Willander M 2001 Semicond Sci. Technol. 16 331
[10] Asano T, Madhukar A, Mahalingam K, Brown G J 2008 J. Appl. Phys. 104 13115
[11] Lin S, Tsai Y J, Lee S C 2013 Appl. Phys. Lett. 83 752
[12] Ye Z, Campell J C, Chen Z, Kim E T, Madhukar A 2002 IEEE J Quantum Elect. 38 1234
[13] Zhao Z Y, Yi C, Lantz K R, Stiff-Roberts A D 2007 Appl. Phys. Lett. 90 233511
[14] Lin L, Zhen H L, Li N, Lu W, Weng Q C, Xiong D Y, Liu F Q 2010 Appl. Phys. Lett. 97 193511
[15] Liu H, Zhang J 2012 Opt. Laser Technol. 44 1536
[16] Lim H, Movaghar B, Tsao S, Taguchi M, Zhang W, Quivy A A, Razeghi M 2006 Phys. Rev. B 74 205321
[17] Liu H C 2003 Opto-electron Rev. 11 1
[18] Liu H C 2002 Semiconduct Semimet 62 126
[19] Carbone A, Introzzi R, Liu H C 2009 Infrared Phys. Techn. 52 260
[20] Lim H, Zhang W, Tsao S, Sills T, Szafraniec J, Mi K, Movaghar B, Razeghi M 2005 Phys. Rev. B 72 0853321
[21] Li S S, Xia J B, Yuan Z L, Xu Z Y, Ge W, Wang X R, Wang Y, Wang J, Chang L L 1996 Phys. Rev. B 54 575
[22] Kim E, Madhukar A, Ye Z,Campbell J 2004 Appl. Phys. Lett. 84 3277
[23] Wang S Y, Lin S D, Wu H W, Lee C P 2001 Appl. Phys. Lett. 78 1023
-
[1] LU W, Liu H, Zhen H, Li N, Xiong D, Zhou X 2005 Chin. Phys. Lett. 22 1806
[2] Liu Y, Yu Z, Jia B, Xu Z, Yao W, Chen Z, Lu P, Han L 2009 Chin. Phys. B 18 4667
[3] Huo Y, Ma W, Zhang Y, Huang J, Wei Y, Cui K, Chen L 2011 Acta. Phys. Sin. 60 098401 (in Chineses) [霍永恒, 马文全, 张艳华, 黄建亮, 卫炀, 崔凯, 陈良惠 2011 物理学报 60 098401]
[4] Liu H, Zhang J 2012 Appl. Optics 51 2767
[5] Liu Y A, Zhuang Y Q, Du L, Su Y H 2013 Acta Phys. Sin. 62 140703 (in Chineses) [刘宇安, 庄奕琪, 杜磊, 苏亚慧 2013 物理学报 62 140703]
[6] An X, Li Y, Liu J 2007 Acta Phys. Sin. 56 4105 (in Chinese) [安兴涛, 李玉现, 刘建军 2007 物理学报 56 4105]
[7] Liu H, Zhang J 2012 Infrared Phys. Techn. 55 320
[8] Martyniuk P, Rogalski A 2009 B Pol. Acad. Sci-Tech. 57 103
[9] Ryzhii V, Khmyrova I, Pipa V, Mitin V, Willander M 2001 Semicond Sci. Technol. 16 331
[10] Asano T, Madhukar A, Mahalingam K, Brown G J 2008 J. Appl. Phys. 104 13115
[11] Lin S, Tsai Y J, Lee S C 2013 Appl. Phys. Lett. 83 752
[12] Ye Z, Campell J C, Chen Z, Kim E T, Madhukar A 2002 IEEE J Quantum Elect. 38 1234
[13] Zhao Z Y, Yi C, Lantz K R, Stiff-Roberts A D 2007 Appl. Phys. Lett. 90 233511
[14] Lin L, Zhen H L, Li N, Lu W, Weng Q C, Xiong D Y, Liu F Q 2010 Appl. Phys. Lett. 97 193511
[15] Liu H, Zhang J 2012 Opt. Laser Technol. 44 1536
[16] Lim H, Movaghar B, Tsao S, Taguchi M, Zhang W, Quivy A A, Razeghi M 2006 Phys. Rev. B 74 205321
[17] Liu H C 2003 Opto-electron Rev. 11 1
[18] Liu H C 2002 Semiconduct Semimet 62 126
[19] Carbone A, Introzzi R, Liu H C 2009 Infrared Phys. Techn. 52 260
[20] Lim H, Zhang W, Tsao S, Sills T, Szafraniec J, Mi K, Movaghar B, Razeghi M 2005 Phys. Rev. B 72 0853321
[21] Li S S, Xia J B, Yuan Z L, Xu Z Y, Ge W, Wang X R, Wang Y, Wang J, Chang L L 1996 Phys. Rev. B 54 575
[22] Kim E, Madhukar A, Ye Z,Campbell J 2004 Appl. Phys. Lett. 84 3277
[23] Wang S Y, Lin S D, Wu H W, Lee C P 2001 Appl. Phys. Lett. 78 1023
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