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In this work,we design a fifth-order chaotic circuit with HP memristors, which consists of a flux-controlled memristor and a charge-controlled memristor. By changing the control parameters, the circuit evolves into different orbits, such as periodic orbits, double-scroll, of single-scroll. In order to ensure the occurrence of chaotic behaviors in the circuit, simulators of the charge-controlled memristor and the flux-controlled memristor are designed with conventional electronic devices, and Pspice simulation is conducted on the resulting circuit. Pspice simulation results verify the correctness of the theorectical analysis.
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Keywords:
- chaotic circuit /
- HP memristor /
- simulator /
- Pspice simulation
[1] Chua L O 1971 IEEE Trans. Circ. Theory 18 507
[2] Strukov D B, Snider G S, Stewart D R, Williams R S 2008 Nature 453 80
[3] Itoh M, Chua L O 2008 Int. J. Bifurc. Chaos 18 3183
[4] Muthuswamy B, Kokate P P 2009 IETE Tech. Rev. 26 417
[5] Wen S, Zeng Z, Huang T 2012 Phys. Lett. A 376 2775
[6] Lin Z, Wang H 2010 IETE Tech. Rev. 27 318
[7] Bao B C, Liu Z, Xu J P 2010 Acta. Phys. Sin. 59 3785 (in Chinese) [包伯成, 刘中, 许建平 2010 物理学报 59 3785]
[8] Bao B C, Liu Z, Xu J P 2010 Chin. Phys. B 19 030510
[9] Li Y X, Zhao L Y, Chi W Q, Lu S L, Huang X 2013 Appl. Mech. Mater. 275 2481
[10] Muthuswamy B 2010 Int. J. Bifur. Chaos 20 1335
[11] Ishaq A A, Srinivasan K, Murali K,Lakshmanan M 2011 Int. J. Bifur. Chaos 21 737
[12] Li Z J, Zeng Y C 2013 Chin. Phys. B 22 040502
[13] Bao B C, Shi G D, Xu J P, Pan S H 2011 Sci. China Tech. Sci. 41 1135 (in Chinese) [包伯成, 史国栋, 许建平, 刘中, 潘赛虎 2011 中国科学: 技术科学 41 1135]
[14] Buscarino A, Fortuna L, Frasca M, Valentina G L 2012 Int. J. Non. Sci. 22 023136
[15] Kavehei O, KimY S, Iqbal A, Eshraghian K, Al-Sarawi S F, Abbott D 2009 Proc. R. Soc. A 466.2120 2175
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[1] Chua L O 1971 IEEE Trans. Circ. Theory 18 507
[2] Strukov D B, Snider G S, Stewart D R, Williams R S 2008 Nature 453 80
[3] Itoh M, Chua L O 2008 Int. J. Bifurc. Chaos 18 3183
[4] Muthuswamy B, Kokate P P 2009 IETE Tech. Rev. 26 417
[5] Wen S, Zeng Z, Huang T 2012 Phys. Lett. A 376 2775
[6] Lin Z, Wang H 2010 IETE Tech. Rev. 27 318
[7] Bao B C, Liu Z, Xu J P 2010 Acta. Phys. Sin. 59 3785 (in Chinese) [包伯成, 刘中, 许建平 2010 物理学报 59 3785]
[8] Bao B C, Liu Z, Xu J P 2010 Chin. Phys. B 19 030510
[9] Li Y X, Zhao L Y, Chi W Q, Lu S L, Huang X 2013 Appl. Mech. Mater. 275 2481
[10] Muthuswamy B 2010 Int. J. Bifur. Chaos 20 1335
[11] Ishaq A A, Srinivasan K, Murali K,Lakshmanan M 2011 Int. J. Bifur. Chaos 21 737
[12] Li Z J, Zeng Y C 2013 Chin. Phys. B 22 040502
[13] Bao B C, Shi G D, Xu J P, Pan S H 2011 Sci. China Tech. Sci. 41 1135 (in Chinese) [包伯成, 史国栋, 许建平, 刘中, 潘赛虎 2011 中国科学: 技术科学 41 1135]
[14] Buscarino A, Fortuna L, Frasca M, Valentina G L 2012 Int. J. Non. Sci. 22 023136
[15] Kavehei O, KimY S, Iqbal A, Eshraghian K, Al-Sarawi S F, Abbott D 2009 Proc. R. Soc. A 466.2120 2175
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