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GaN基发光二极管衬底材料的研究进展

陈伟超 唐慧丽 罗平 麻尉蔚 徐晓东 钱小波 姜大朋 吴锋 王静雅 徐军

GaN基发光二极管衬底材料的研究进展

陈伟超, 唐慧丽, 罗平, 麻尉蔚, 徐晓东, 钱小波, 姜大朋, 吴锋, 王静雅, 徐军
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  • GaN基发光二极管(LED)作为第三代照明器件在近年来发展迅猛. 衬底材料作为LED制造的基础,对器件制备与应用具有极其重要的影响. 本文分析综述了衬底材料影响LED器件设计与制造的关键特性(晶格结构、热胀系数、热导率、光学透过率、导电性),对比了几种常见衬底材料(蓝宝石、碳化硅、单晶硅、氮化镓、氧化镓)在高质量外延层生长、高性能器件设计和衬底材料制备方面的研究进展,并对几种材料的发展前景做出了展望.
    • 基金项目: 上海市科委科技基金(批准号:13521102700)和国家自然科学基金(批准号:61177037)资助的课题.
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    Kong Y C, Zheng Y L, Chu R M, Gu S L 2003 Acta Phys. Sin. 52 1756 (in Chinese) [孔月婵, 郑有炓, 储荣明, 顾书林 2003 物理学报 52 1756]

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    Xu G Z, Liang H, Bai Y Q, Liu J M, Zhu X 2005 Acta Phys. Sin. 54 5344 (in Chinese) [徐耿钊, 梁琥, 白永强, 刘纪美, 朱星2005 物理学报 54 5344]

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    [8]

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    Pimputkar S, Speck J S, DenBaars S P, Nakamura S 2009 Nat. Photon. 3 180

    [10]

    Li B Q, Liu Y H, Feng Y C 2008 Acta Phys. Sin. 57 477 (in Chinese) [李炳乾, 刘玉华, 冯玉春 2008 物理学报 57 477]

    [11]

    Shen Y C, Mueller G O, Watanabe S, Gardner N F, Munkholm A, Krames M R 2007 Appl. Phys. Lett. 91 141101

    [12]

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    Zhang Y Y, Fan G H 2011 Acta Phys. Sin. 60 018502 (in Chinese) [张运炎, 范广涵 2011 物理学报 60 018502]

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    Liu M L, Min Q Y, Ye Z Q 2012 Acta Phys. Sin. 61 178503 (in Chinese) [刘木林, 闵秋应, 叶志清 2012 物理学报 61 178503]

    [15]

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  • 收稿日期:  2013-11-01
  • 修回日期:  2013-12-17
  • 刊出日期:  2014-03-05

GaN基发光二极管衬底材料的研究进展

  • 1. 中国科学院上海硅酸盐研究所, 上海 201800;
  • 2. 中国科学院大学, 北京 100049
    基金项目: 

    上海市科委科技基金(批准号:13521102700)和国家自然科学基金(批准号:61177037)资助的课题.

摘要: GaN基发光二极管(LED)作为第三代照明器件在近年来发展迅猛. 衬底材料作为LED制造的基础,对器件制备与应用具有极其重要的影响. 本文分析综述了衬底材料影响LED器件设计与制造的关键特性(晶格结构、热胀系数、热导率、光学透过率、导电性),对比了几种常见衬底材料(蓝宝石、碳化硅、单晶硅、氮化镓、氧化镓)在高质量外延层生长、高性能器件设计和衬底材料制备方面的研究进展,并对几种材料的发展前景做出了展望.

English Abstract

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