VO2/AZO复合薄膜的制备及其光电特性研究

袁文瑞; 李毅; 王晓华; 郑鸿柱; 陈少娟; 陈建坤; 孙瑶; 唐佳茵; 刘飞; 郝如龙; 方宝英; 肖寒

doi:10.7498/aps.63.218101

摘要

采用直流磁控溅射和后退火氧化的方法在掺铝氧化锌(AZO)导电玻璃上制备了二氧化钒(VO2)薄膜,研究了不同的退火温度、退火时间对VO2/AZO复合薄膜制备的影响,并对复合薄膜的结构、组分、光电特性进行了测试与分析. 结果表明,导电玻璃上的AZO没有改变VO2的取向生长,但明显改变了VO2薄膜的表面形貌特征. 与用相同工艺和条件在普通玻璃基底上制备的VO2薄膜相比,VO2/AZO复合薄膜的相变温度降低约25 ℃,热滞回线宽度收窄至6 ℃,相变前后可见光透过率均在50%以上,1500 nm处红外透过率约为55%和21%,电阻率变化达3 个数量级. 该复合薄膜表面平滑致密,制备工艺简单,性能稳定,可应用于新型光电器件.

关键词:

VO2 /
AZO /
热致相变 /
光电特性

Abstract

Vanadium dioxide (VO2) thin film have been fabricated on the ZnO-doped Al conductive glass (AZO) substrates by DC magnetron sputtering and after thermal annealing. Effect of different annealing temperature and time olunation on the VO2/AZO composite films has been studied, then the structure, components and optical-electrical properties of the composite films are tested and analyzed by suitable instruments. Results show that the AZO film deposited on the conductive glass substrate dose not change the preferred orientation growth of the VO2 thin film, but its surface morphology characteristics are changed. Compared with those fabricated on ordinary glass substrates by the same processes and conditions, the phase transition temperature of the VO2/AZO composite film is decreased by about 25 ℃, and the width of thermal hysteresis is narrowed to about 6 ℃. Before and after phase transition, the visible light transmittance remains higher than 50%, and the infrared transmittances at a wavelength of 1500nm are 55% and 21% respectively. Furthermore, the resistivity rangeability is also up to three orders of magnitude before and after phase transition. In conclusion, the VO2/AZO composite films are easy to be fabricated and have a high degree of stability, smooth ness and compact surface morphology, thus they may be used to make new photoelectric devices

Keywords:

作者及机构信息

1.
上海理工大学光电信息与计算机工程学院, 上海 200093;

2.
上海市现代光学系统重点实验室, 上海 200093;

3.
上海电力学院计算机与信息工程学院, 上海 200090

基金项目: 国家高技术研究发展计划(863计划)项目(批准号:2006AA03Z348)、教育部科学技术研究重点项目(批准号:207033)、上海市科学技术委员会科技攻关计划项目(批准号:06DZ11415)、上海市教育委员会科技创新重点项目(批准号:10ZZ94) 和上海领军人才培养计划资助项目(批准号:2011-026)资助的课题.

Authors and contacts

1.
School of Optical-Electrical and Computer Engineering, University of Shanghai for Science and Technology, Shanghai 200093, China;

2.
Shanghai Key Laboratory of Modern Optical Systems, Shanghai 200093, China;

3.
Department of Computer and Information Engineering, Shanghai University of Electric Power, Shanghai 200090, China

Funds: Project supported by the National High Technology Research and Development Program of China (Grant No. 2006AA03Z348), the Foundation for Key Program of Ministry of Education, China (Grant No. 207033), the Science and Technology Research Projects of Shanghai Science and Technology Commission, China (Grant No. 06DZ11415), the Key Science and Technology Research Project of Shanghai Committee, China(Grant No. 10ZZ94), and the Shanghai Talent Leading Plan, China(Grant No. 2011-026).

参考文献

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施引文献

[1]	Morin F J 1959 Phys. Rev. Lett. 3 34
[2]	Wang H C, Yi X J, Li Y 2005 Opt. Commun. 256 305
[3]	Lee Y W, Kim B J, Lim J W, Jin Y S 2008 Appl. Phys. Lett. 92 162903
[4]	Zhu H Q, Li Yi, Zhou S, Huang Y Z, Tong G X, Sun R X, Zhang Y M, Zheng Q X, Li L, Shen Y J, Fang B Y 2011 Acta Phys. Sin. 60 098104 (in Chinese) [朱慧群, 李毅, 周晟, 黄毅泽, 佟国香, 孙若曦, 张宇明, 郑秋心, 李榴, 沈雨剪, 方宝英 2011 物理学报 60 098104]
[5]	Liu Z Q, Chang S J, Wang X L, Fan F, Li W 2013 Acta Phys. Sin. 62 130702 (in Chinese) [刘志强, 常胜江, 王晓雷, 范飞, 李伟 2013 物理学报 62 130702]
[6]	Fujita S, Jovaini A, Godoy S, Suzuki A 2012 Phys. Lett. A 376 2808
[7]	Marvel R E, AppavooK, Choi B K, Nag J, HaglundRFJr 2013 Appl. Phys. A 111 975
[8]	Qin Y, Li Y, Fang B Y, Tong G X, Wang X H, Ding J, Wang F, Yan M, Liang Q, Chen S J, Chen J K, Zheng H Z, Yuan W R 2013 Acta Opt. Sin. 33 351 (in Chinese) [覃源, 李毅, 方宝英, 佟国香, 王晓华, 丁杰, 王峰, 严梦, 梁倩, 陈少娟, 陈建坤, 郑鸿柱, 袁文瑞 2013 光学学报 33 351]
[9]	Wang X J, Liu Y Y, Li D H, Feng B H, He Z W, Qi Z 2013 Chin. Phys. B 22 066803
[10]	Zhou S, Li Y, Zhu H Q, Sun R X, Zhang Y M, Huang Y Z, Li L, Shen Y J, Zhen Q X, Tong G X, Fang B Y 2012 Surf. Coat. Int. 206 2922
[11]	Xu G, Jin P, Tazawa M 2004 Sol. Energy Mater. Sol. Cells 83 29
[12]	Shen N, Li Y, Yi X J 2006 J. Infra. Milli. Waves 25 199 (in Chinese) [沈楠, 李毅, 易新建 2006 红外与毫米波学报 25 199]
[13]	Bayati M R, Molaei R, Wu F, Budai J D, Liu Y, Narayan R J, Narayan J 2013 Acta Mater. 61 7805
[14]	Yang TH, Jin C M, Zhou HH, Narayan R J, NarayanJ 2010 Appl. Phys. Lett. 97 072101
[15]	Granqvist C G, Pehlivan B, Ji Y X, Li S Y, G. A. Niklasson G A 2014 Thin Solid Films 559 2
[16]	Tong G X, Li Y, Wang F, Huang Y Z, Fang B Y, Wang X H, Zhu H Q, Liang Q, Yan M, Qin Y, Ding J, Chen S J, Chen J K, Zheng H Z, Yuan W R 2013 Acta Phys. Sin. 62 208102 (in Chinese) [佟国香, 李毅, 王锋, 黄毅泽, 方宝英, 王晓华, 朱慧群, 梁倩, 严梦, 覃源, 丁杰, 陈少娟, 陈建坤, 郑鸿柱, 袁文瑞 2013 物理学报 62 208102]
[17]	Brasard D, Fourmaux S, Jean-Jacques M, Kieffer J C, Khakani M A 2005 Appl. Phys. Lett. 87 051910

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