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硅基III-V族量子点激光器的发展现状和前景

王霆 张建军 Huiyun Liu

硅基III-V族量子点激光器的发展现状和前景

王霆, 张建军, Huiyun Liu
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  • 本文简要综述了硅基III-V族量子点激光器的研究进展. 在介绍了量子点激光器的优势和发展后, 重点介绍了近年来硅基、锗基III-V族量子点材料生长上的突破性进展及所带来的器件性能的大幅提高, 如实现了锗基和硅基1.3 m InAs/GaAs量子点激光器的室温激射, 锗基量子点激光器的阈值电流低至55.2 A/cm2并可达60 ℃以上的连续激射, 通过锗硅虚拟衬底, 在硅基上实现了30 ℃下以16.6 mW的输出功率达到4600 h的激光寿命, 这些突破性的进展为硅基光电子集成打开了新的大门.
    [1]

    Zhou Z P 2012 Si-based Optoeletronics (Beijing: Beijing University Press) (in Chinese) [周治平 2012 硅基光电子学 (北京: 北京大学出版社)]

    [2]

    Camacho-Aguilera R E, Cai Y, Patel N, Bessette J T, Romagnoli M, Kimerling L C, Michel J 2012 Opt. Express 20 11316

    [3]

    Wirths S, Geiger R, von den Driesch N, Mussler G, Stoica T, Mantl S, Ikonic Z, Luysberg M, Chiussi S, Hartmann J M, Sigg H, Faist J, Buca D, Grtzmacher D 2015 Nat. Photon. 9 88

    [4]

    D'Avezac M, Luo J W, Chanier T, Zunger A 2012 Phys. Rev. Lett. 108 027401

    [5]

    Liu H, Wang T, Jiang Q, Hogg R, Tutu F, Pozzi F, Seeds A 2011 Nat. Photon. 5 416

    [6]

    Wang T, Liu H, Lee A, Pozzi F, Seeds A 2011 Opt. Express 19 11381

    [7]

    Lee A, Jiang A, Tang M, Seeds A, Liu H 2012 Opt. Express 20 22181

    [8]

    Chen S, Tang M, Wu J, Jiang Q, Dorogan V, Benamara M, Mazur Y, Salamo G, Seeds A, Liu H 2014 Electron Lett. 50 1467

    [9]

    Kroemer H 1963 Proc. IEEE 51 1782

    [10]

    Alferov Z I, Kazarinov R 1963 181737

    [11]

    Asada M, Miyamoto Y, Suematsu Y 1986 IEEE J. Quant. Electron. 22 1915

    [12]

    Arakawa Y, Sakaki H 1982 Appl. Phys. Lett. 40 939

    [13]

    Liu G, Stintz A, Li H, Malloy K, Lester L 1999 Electron. Lett. 35 1163

    [14]

    Liu H, Hopkinson M, Harrison C, Steer M, Frith R, Sellers I, Mowbray D, Skolnick M 2003 J. Appl. Phys. 93 2931

    [15]

    Liu H, Sellers I, Badcock T, Mowbray D, Skolnick M, Groom K, Gutierrez M, Hopkinson M, Ng J, David J 2004 Appl. Phys. Lett. 85 704

    [16]

    Liu H, Sellers I, Gutierrez M, Groom K, Soong W, Hopkinson M, David J, Beanland R, Badcock T, Mowbray D 2004 J. Appl. Phys. 96 1988

    [17]

    Sugawara M, Usami M 2009 Nat. Photon. 3 30

    [18]

    Maximov M V, Ledentsov N N 2004 Dekker Encyclopedia Nanosci. Nanotechnol. 3109

    [19]

    Li S, Gong Q, Cao C, Wang X, Yan J, Wang Y, Wang H 2013 Infrared Phys. Technol. 60 216

    [20]

    Dingle R, Henry C H 1976 US3982207A

    [21]

    Hirayama H, Matsunaga K, Asada M, Suematsu Y 1994 Electron Lett. 30 142

    [22]

    Kirstaedter N, Ledentsov N N, Grundmann M, Bimberg D, Ustinov V M, Ruvimov S S, Maximov M V, Kop'ev P S, Alferov Z I, Richter U, Werner P, Gosele U, Heydenreich J 1994 Electron Lett. 30 1416

    [23]

    Wu J, Chen S, Seeds A, Liu H 2015 J. Phys. D 48 363001

    [24]

    van der Ziel J P, Dupuis R D, Logan R A, Pinzone C J 1987 Appl. Phys. Lett. 51 89

    [25]

    Choi H K, Wang C A, Karam N H 1991 Appl. Phys. Lett. 59 2633

    [26]

    Kazi Z I, Thilakan P, Egawa T, Umeno M, Jimbo T 2001 Jpn. J. Appl. Phys. 40 4903

    [27]

    Kazi Z I, Egawa T, Jimbo T, Umeno M 2000 Jpn. J. Appl. Phys. 39 3860

    [28]

    Groenert M E, Pitera A J, Ram R J, Fitzgerald E A 2003 J. Vac. Sci. Technol. B 21 1064

    [29]

    Liu A Y, Herrick R W, Ueda O, Petroff P M, Gossard A C, Bowers J E 2015 IEEE J. Quantum Electron. 21 1900708

    [30]

    Jalali B, Fathpour S 2006 J. Lightwave Techn. 24 4600

    [31]

    Rong H, Jones R, Liu A, Cohen O, Hak D, Fang A, Paniccia M 2005 Nature 433 725

    [32]

    Chen X, Li C, Tsang H K 2011 NPG Asia Materials 3 34

    [33]

    Park H, Fang A W, Kodama S, Bowers J E 2005 Opt. Express 13 9460

    [34]

    Tanabe K, Watanabe K, Arakawa Y 2012 Sci. Rep. 2 349

    [35]

    Liang D, Bowers J E 2010 Nat. Photon. 4 511

    [36]

    Wang W 1984 Appl. Phys. Lett. 44 1149

    [37]

    Fletcher R M, Wagner D K, Ballantyne J M 1984 Appl. Phys. Lett. 44 967

    [38]

    Deppe D, Holonyak J N, Nam D, Hsieh K, Jackson G, Matyi R, Shichijo H, Epler J, Chung H 1987 Appl. Phys. Lett. 51 637

    [39]

    Deppe D, Nam D, Holonyak J N, Hsieh K, Matyi R, Shichijo H, Epler J, Chung H 1987 Appl. Phys. Lett. 51 1271

    [40]

    Kaliski R, Holonyak J N, Hsieh K, Nam D, Lee J, Shichijo H, Burnham R, Epler J, Chung H 1987 Appl. Phys. Lett. 50 836

    [41]

    Hall D, Deppe D, Holonyak J N, Matyi R, Shichijo H, Epler J 1988 J. Appl. Phys. 64 2854

    [42]

    Linder K, Phillips J, Qasaimeh O, Liu X, Krishna S, Bhattacharya P, Jiang J 1999 Appl. Phys. Lett. 74 1355

    [43]

    Kazi Z I, Egawa T, Umeno M, Jimbo T 2001 J. Appl. Phys. 90 5463

    [44]

    Mi Z, Bhattacharya P, Yang J, Pipem K 2005 Electron. Lett. 41 742

    [45]

    Mi Z, Yang J, Bhattacharya P, Huffaker D 2006 Electron. Lett. 42 121

    [46]

    Yang J, Bhattacharya P, Mi Z 2007 IEEE Trans. Electron Devices 54 2849

    [47]

    Yang J, Bhattacharya P, Wu Z 2007 IEEE Photon. Technol. Lett. 19 747

    [48]

    Yang J, Bhattacharya P 2008 Opt. Express 16 5136

    [49]

    Li L, Guimard D, Rajesh M, Arakawa Y 2008 Appl. Phys. Lett. 92 3105

    [50]

    Tanabe K, Watanabe K, Arakawa Y 2012 Sci. Rep. 2 349

    [51]

    Liu A Y, Zhang C, Norman J, Snyder A, Lubyshev D, Fastenau J M, Liu A W, Gossard A C, Bowers J E 2014 Appl. Phys. Lett. 104 041104

    [52]

    Liu A Y, Zhang C, Snyder A, Lubyshev D, Fastenau J M, Liu A W, Gossard A C, Bowers J E 2014 J. Vac. Sci. Technol. B 32 02C108

  • [1]

    Zhou Z P 2012 Si-based Optoeletronics (Beijing: Beijing University Press) (in Chinese) [周治平 2012 硅基光电子学 (北京: 北京大学出版社)]

    [2]

    Camacho-Aguilera R E, Cai Y, Patel N, Bessette J T, Romagnoli M, Kimerling L C, Michel J 2012 Opt. Express 20 11316

    [3]

    Wirths S, Geiger R, von den Driesch N, Mussler G, Stoica T, Mantl S, Ikonic Z, Luysberg M, Chiussi S, Hartmann J M, Sigg H, Faist J, Buca D, Grtzmacher D 2015 Nat. Photon. 9 88

    [4]

    D'Avezac M, Luo J W, Chanier T, Zunger A 2012 Phys. Rev. Lett. 108 027401

    [5]

    Liu H, Wang T, Jiang Q, Hogg R, Tutu F, Pozzi F, Seeds A 2011 Nat. Photon. 5 416

    [6]

    Wang T, Liu H, Lee A, Pozzi F, Seeds A 2011 Opt. Express 19 11381

    [7]

    Lee A, Jiang A, Tang M, Seeds A, Liu H 2012 Opt. Express 20 22181

    [8]

    Chen S, Tang M, Wu J, Jiang Q, Dorogan V, Benamara M, Mazur Y, Salamo G, Seeds A, Liu H 2014 Electron Lett. 50 1467

    [9]

    Kroemer H 1963 Proc. IEEE 51 1782

    [10]

    Alferov Z I, Kazarinov R 1963 181737

    [11]

    Asada M, Miyamoto Y, Suematsu Y 1986 IEEE J. Quant. Electron. 22 1915

    [12]

    Arakawa Y, Sakaki H 1982 Appl. Phys. Lett. 40 939

    [13]

    Liu G, Stintz A, Li H, Malloy K, Lester L 1999 Electron. Lett. 35 1163

    [14]

    Liu H, Hopkinson M, Harrison C, Steer M, Frith R, Sellers I, Mowbray D, Skolnick M 2003 J. Appl. Phys. 93 2931

    [15]

    Liu H, Sellers I, Badcock T, Mowbray D, Skolnick M, Groom K, Gutierrez M, Hopkinson M, Ng J, David J 2004 Appl. Phys. Lett. 85 704

    [16]

    Liu H, Sellers I, Gutierrez M, Groom K, Soong W, Hopkinson M, David J, Beanland R, Badcock T, Mowbray D 2004 J. Appl. Phys. 96 1988

    [17]

    Sugawara M, Usami M 2009 Nat. Photon. 3 30

    [18]

    Maximov M V, Ledentsov N N 2004 Dekker Encyclopedia Nanosci. Nanotechnol. 3109

    [19]

    Li S, Gong Q, Cao C, Wang X, Yan J, Wang Y, Wang H 2013 Infrared Phys. Technol. 60 216

    [20]

    Dingle R, Henry C H 1976 US3982207A

    [21]

    Hirayama H, Matsunaga K, Asada M, Suematsu Y 1994 Electron Lett. 30 142

    [22]

    Kirstaedter N, Ledentsov N N, Grundmann M, Bimberg D, Ustinov V M, Ruvimov S S, Maximov M V, Kop'ev P S, Alferov Z I, Richter U, Werner P, Gosele U, Heydenreich J 1994 Electron Lett. 30 1416

    [23]

    Wu J, Chen S, Seeds A, Liu H 2015 J. Phys. D 48 363001

    [24]

    van der Ziel J P, Dupuis R D, Logan R A, Pinzone C J 1987 Appl. Phys. Lett. 51 89

    [25]

    Choi H K, Wang C A, Karam N H 1991 Appl. Phys. Lett. 59 2633

    [26]

    Kazi Z I, Thilakan P, Egawa T, Umeno M, Jimbo T 2001 Jpn. J. Appl. Phys. 40 4903

    [27]

    Kazi Z I, Egawa T, Jimbo T, Umeno M 2000 Jpn. J. Appl. Phys. 39 3860

    [28]

    Groenert M E, Pitera A J, Ram R J, Fitzgerald E A 2003 J. Vac. Sci. Technol. B 21 1064

    [29]

    Liu A Y, Herrick R W, Ueda O, Petroff P M, Gossard A C, Bowers J E 2015 IEEE J. Quantum Electron. 21 1900708

    [30]

    Jalali B, Fathpour S 2006 J. Lightwave Techn. 24 4600

    [31]

    Rong H, Jones R, Liu A, Cohen O, Hak D, Fang A, Paniccia M 2005 Nature 433 725

    [32]

    Chen X, Li C, Tsang H K 2011 NPG Asia Materials 3 34

    [33]

    Park H, Fang A W, Kodama S, Bowers J E 2005 Opt. Express 13 9460

    [34]

    Tanabe K, Watanabe K, Arakawa Y 2012 Sci. Rep. 2 349

    [35]

    Liang D, Bowers J E 2010 Nat. Photon. 4 511

    [36]

    Wang W 1984 Appl. Phys. Lett. 44 1149

    [37]

    Fletcher R M, Wagner D K, Ballantyne J M 1984 Appl. Phys. Lett. 44 967

    [38]

    Deppe D, Holonyak J N, Nam D, Hsieh K, Jackson G, Matyi R, Shichijo H, Epler J, Chung H 1987 Appl. Phys. Lett. 51 637

    [39]

    Deppe D, Nam D, Holonyak J N, Hsieh K, Matyi R, Shichijo H, Epler J, Chung H 1987 Appl. Phys. Lett. 51 1271

    [40]

    Kaliski R, Holonyak J N, Hsieh K, Nam D, Lee J, Shichijo H, Burnham R, Epler J, Chung H 1987 Appl. Phys. Lett. 50 836

    [41]

    Hall D, Deppe D, Holonyak J N, Matyi R, Shichijo H, Epler J 1988 J. Appl. Phys. 64 2854

    [42]

    Linder K, Phillips J, Qasaimeh O, Liu X, Krishna S, Bhattacharya P, Jiang J 1999 Appl. Phys. Lett. 74 1355

    [43]

    Kazi Z I, Egawa T, Umeno M, Jimbo T 2001 J. Appl. Phys. 90 5463

    [44]

    Mi Z, Bhattacharya P, Yang J, Pipem K 2005 Electron. Lett. 41 742

    [45]

    Mi Z, Yang J, Bhattacharya P, Huffaker D 2006 Electron. Lett. 42 121

    [46]

    Yang J, Bhattacharya P, Mi Z 2007 IEEE Trans. Electron Devices 54 2849

    [47]

    Yang J, Bhattacharya P, Wu Z 2007 IEEE Photon. Technol. Lett. 19 747

    [48]

    Yang J, Bhattacharya P 2008 Opt. Express 16 5136

    [49]

    Li L, Guimard D, Rajesh M, Arakawa Y 2008 Appl. Phys. Lett. 92 3105

    [50]

    Tanabe K, Watanabe K, Arakawa Y 2012 Sci. Rep. 2 349

    [51]

    Liu A Y, Zhang C, Norman J, Snyder A, Lubyshev D, Fastenau J M, Liu A W, Gossard A C, Bowers J E 2014 Appl. Phys. Lett. 104 041104

    [52]

    Liu A Y, Zhang C, Snyder A, Lubyshev D, Fastenau J M, Liu A W, Gossard A C, Bowers J E 2014 J. Vac. Sci. Technol. B 32 02C108

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  • 收稿日期:  2015-09-07
  • 修回日期:  2015-09-25
  • 刊出日期:  2015-10-20

硅基III-V族量子点激光器的发展现状和前景

  • 1. 中国科学院物理研究所, 北京 100190;
  • 2. Department of Electrical and Electronic Engineering, University College London, Torrington Place, London, UK

摘要: 本文简要综述了硅基III-V族量子点激光器的研究进展. 在介绍了量子点激光器的优势和发展后, 重点介绍了近年来硅基、锗基III-V族量子点材料生长上的突破性进展及所带来的器件性能的大幅提高, 如实现了锗基和硅基1.3 m InAs/GaAs量子点激光器的室温激射, 锗基量子点激光器的阈值电流低至55.2 A/cm2并可达60 ℃以上的连续激射, 通过锗硅虚拟衬底, 在硅基上实现了30 ℃下以16.6 mW的输出功率达到4600 h的激光寿命, 这些突破性的进展为硅基光电子集成打开了新的大门.

English Abstract

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