利用N型半导体纳米材料抑制单量子点的荧光闪烁特性

王早; 张国峰; 李斌; 陈瑞云; 秦成兵; 肖连团; 贾锁堂

doi:10.7498/aps.64.247803

摘要

利用N型半导体纳米材料氧化铟锡(ITO)作为单CdSe/ZnS量子点的基质来抑制单量子点的荧光闪烁特性. 实验采用激光扫描共聚焦显微成像系统测量了单量子点荧光的亮、暗态持续时间的概率密度分布的指数截止的幂律特性, 并与直接吸附在SiO2玻片上的单CdSe/ZnS量子点的荧光特性进行比较. 研究发现处于ITO中的单量子点比SiO2玻片上的单量子点荧光亮态持续时间提高两个数量级, 掺杂于ITO中的单量子点的荧光寿命约减小为SiO2玻片上的单量子点的荧光寿命的41%, 并且寿命分布宽度变小50%.

关键词:

Abstract

Single quantum dots (QDs) always exhibit strong blinking in fluorescence intensity when they are on some inert substrates. The blinking activity is attributed to the photoinduced charging of QDs by electron transfer (ET) to trap states in QDs and the surrounding matrix, which has been considered as an undesirable property in many applications. Here, we use N-doped indium tin oxide (ITO) semiconductor nanoparticles to suppress fluorescence blinking activity of single CdSe/ZnS core/shell QDs. The fluorescence characteristics of single QDs in ITO and on SiO2 cover glass are measured by a laser scanning confocal fluorescence microscopy, respectively. It is found that the on-and off-state probability densities of QDs on different substrates both can be fit by a truncated power law. Blinking rates for single QDs on glass and in ITO are also calculated. By contrast, single QDs doped in ITO show that their blinking rate and fluorescence lifetime both decrease. The on-state probability density of single QDs in ITO is approximately two orders of magnitude higher than that of QDs on SiO2 cover glass. It means that single QDs doped in ITO have a longer time to be on-state. Because the Fermi level in QDs is lower than in ITO, when they are in contact, electrons in ITO will transfer to QDs. As a result, the equilibration of their Fermi levels leads to the formation of negatively charged QDs. These electrons fill in the holes of QDs shell and enhance the on-state probability of QDs. Fluorescence decays of single QDs on glass and in ITO are measured by TAC/MCA, and they can be fit by biexponential function. The two lifetime values correspond to the single exciton lifetime and biexciton lifetime of QDs, respectively. It is worth noting that the distribution of the amplitude weighted average lifetime for single QDs in ITO is approximately 41% of that for single QDs on SiO2 cover glass and its full width at half maximum (FWHM) is changed to 50%. For the conduction band potential of QDs is higher than that of ITO, which contributes to photoinduced interfacial electron transfer from QDs to ITO and leads to the increase of nonradiative transition. These indicate that ITO can reduce single exciton and biexciton lifetime of QDs. The study demonstrates that ITO can effectively suppress the blinking activity of QDs.

Keywords:

作者及机构信息

1.
山西大学激光光谱研究所, 量子光学与光量子器件国家重点实验室, 太原 030006

通信作者: 肖连团, xlt@sxu.edu.cn

基金项目: 国家重点基础研究发展计划(批准号: 2012CB921603)、国家自然科学基金(批准号: 11374196, 11174187, 10934004, 11204166, 11404200)、教育部长江学者和创新团队发展计划(批准号: IRT13076)、教育部博士点基金(批准号: 20121401120016)和山西省留学回国人员科技活动择优项目资助的课题.

Authors and contacts

1.
State Key Laboratory of Quantum Optics and Quantum Optics Devices, Institute of Laser Spectroscopy, Shanxi University, Taiyuan 030006, China

Corresponding author: Xiao Lian-Tuan, xlt@sxu.edu.cn

Funds: Project supported by the National Basic Program of China (Grant No. 2012CB921603), the National Natural Science Foundation of China (Grant Nos. 11374196, 11174187, 10934004, 11204166, 11404200), the Program for Changjiang Scholars and Innovative Research Team in University of Ministry of Education of China (Grant No. IRT13076), the Doctoral Foundation of the Education Ministry of China (Grant No. 20121401120016), and the Program for the Scientific Activities of Selected Returned Overseas Professionals in Shanxi Province, China.

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[20]	LeBlanc S J, McClanahan M R, Moyer T, Jones M, Moyer P J 2014 Appl. Phys. 115 034306
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[22]	Chang Y P, Tsai P Y, Lee H L, Lin K C 2013 Electroanalysis 25 1064
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[26]	Cheng H W, Yuan C T, Wang J S, Lin T N, Shen J L, Hung Y L, Tang J, Tseng F G 2014 J. Phys. Chem. C 118 18126
[27]	Fisher B, Caruge J M, Zehnder D, Bawendi M G 2005 Phys. Rev. Lett. 94 087403
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[31]	Zhang G F, Xiao L T, Chen R Y, Gao Y, Jia S T 2011 Phys. Chem. Chem. Phys. 13 13815

施引文献

[1]	Kloepfer J A, Bradforth S E, Nadeau J L 2005 J. Phys. Chem. B 109 9996
[2]	Sungwoo K, Hyuk Im S, Sang-Wook K 2013 Nanoscale 5 5205
[3]	Sambur J B, Novet T, Parkinson1 B A 2010 Science 330 63
[4]	Li W J, Zhong X H 2015 Acta Phys. Sin. 64 038806 (in Chinese) [李文杰, 钟新华 2015 物理学报 64 038806]
[5]	Bruchez Jr M, Moronne M, Gin P, Weiss S, Paul Alivisatos A 1998 Science 281 2013
[6]	Jaqaman K, Loerke D, Mettlen M, Kuwata H, Grinstein S, Schmid S L, Danuser G 2008 Nat. Methods 5 695
[7]	Dertinger T, Colyer R, Iyer G, Weiss R, Enderlein J 2009 Proc. Natl. Acad. Sci. 106 22287
[8]	Peterson J J, Nesbitt D J 2009 Nano Lett. 9 338
[9]	Galland C, Ghosh Y, Steinbrck A, Sykora M, Hollingsworth J A, Klimov V I, Htoon H 2011 Nature 479 203
[10]	Kiraz A, Atatre M, Imamoğlu A 2004 Phys. Rev. A 69 032305
[11]	Aldana J, Wang Y A, Peng X G 2001 J. Am. Chem. Soc. 123 8844
[12]	Guo W Z, Li J J, Wang Y A, Peng X G 2003 J. Am. Chem. Soc. 125 3901
[13]	Jin S Y, Song N H, Lian T Q 2010 ACS Nano 4 1545
[14]	Wu J F, Zhang G F, Chen R Y, Qin C B, Xiao L T, Jia S T 2014 Acta Phys. Sin. 63 167302 (in Chinese) [吴建芳, 张国峰, 陈瑞云, 秦成兵, 肖连团, 贾锁堂 2014 物理学报 63 167302]
[15]	Nagao Y, Fujiwara H, Sasaki K 2014 J. Phys. Chem. C 118 20571
[16]	Zhou X D, Zhang S F, Zhou S H 2015 Acta Phys. Sin. 64 167301 (in Chinese) [周小东, 张少锋, 周思华 2015 物理学报 64 167301]
[17]	Hohng S, Ha T 2004 J. Am. Chem. Soc. 126 1324
[18]	Schafer S, Wang Z, Kipp T, Mews A 2011 Phys. Rev. Lett. 107 137403
[19]	Chiba T, Qi J, Fujiwara H, Sasaki K 2013 J. Phys. Chem. C 117 2507
[20]	LeBlanc S J, McClanahan M R, Moyer T, Jones M, Moyer P J 2014 Appl. Phys. 115 034306
[21]	Li Y, Liu R W, Ma L, Fan S N, Li H, Hu S X, Li M 2015 Chin. Phys. B 24 078202
[22]	Chang Y P, Tsai P Y, Lee H L, Lin K C 2013 Electroanalysis 25 1064
[23]	Wu X Y, Yeow E K L 2010 Chem. Commun. 46 4390
[24]	Kuno M, Fromm D P, Hamann H F, Gallagher A, Nesbitt D J 2000 J. Chem. Phys. 112 3117
[25]	Tang J, Marcus R A 2005 Phys. Rev. Lett. 95 107401
[26]	Cheng H W, Yuan C T, Wang J S, Lin T N, Shen J L, Hung Y L, Tang J, Tseng F G 2014 J. Phys. Chem. C 118 18126
[27]	Fisher B, Caruge J M, Zehnder D, Bawendi M G 2005 Phys. Rev. Lett. 94 087403
[28]	Mangum B D, Ghosh Y, Hollingsworth J A, Htoon H 2013 Opt. Express 21 7419
[29]	Inamdar S N, Ingole P P, Haram S K 2008 Chem. Phys. Chem. 9 2574
[30]	Debnath T, Maity P, Banerjee T, Das A, Ghosh H N 2015 J. Phys. Chem. C 119 3522
[31]	Zhang G F, Xiao L T, Chen R Y, Gao Y, Jia S T 2011 Phys. Chem. Chem. Phys. 13 13815

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