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空间用倒装三结太阳能电池及其抗辐射性能研究

宋明辉 王笃祥 毕京锋 陈文浚 李明阳 李森林 刘冠洲 吴超瑜

空间用倒装三结太阳能电池及其抗辐射性能研究

宋明辉, 王笃祥, 毕京锋, 陈文浚, 李明阳, 李森林, 刘冠洲, 吴超瑜
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  • 使用金属有机化学气相沉积技术,在4英寸GaAs衬底上获得了空间用GaInP/GaAs/In0.3Ga0.7As倒装三结太阳能电池.高分辨X射线衍射和阴极射线发光测试结果表明AlInGaAs应力渐变缓冲层的晶格弛豫度约100%,其整面平均穿透位错密度约5.4×106/cm2.与GaInP/InGaAs/Ge常规三结太阳能电池相比,在AM0光谱、25 ℃测试条件下,面积24 cm2的倒装三结太阳能电池转换效率达到32%,输出功率提高了5%.采用1 MeV高能电子对倒装三结电池进行粒子辐照测试,电池各项性能参数随不同辐照剂量发生改变,在1×1015/cm2辐照总剂量下电池转换效率衰降比例达到15%.
      通信作者: 宋明辉, songminghui@sanan-e.com
    • 基金项目: 天津市科技小巨人领军企业培育重大项目(批准号:14ZXLJGX00400)和天津市科技支撑计划(批准号:16YFZCGX00030)资助的课题.
    [1]

    Ficcadenti M, Campesato R, Casale M, Gabetta G, Gori G, Kagan M, Kholev B A, Ivanov V 2014 10th European Space Power Conference Noordwijkerhout, Netherlands, April 13-17, 2014 p1

    [2]

    Guter W, Schöne J, Philipps S, Steiner M, Siefer G, Wekkeli A, Welser E, Oliva E, Bett A, Dimroth F 2009 Appl. Phys. Lett. 94 223504

    [3]

    Fuhrmann D, Meusel M, Ebel L, Guter W, Kubera T, Köstler W, Strobl G 2013 9 th International Conference on Concentrator Photovoltaics Miyazaki, Japan, April 15-17, 2013 p1

    [4]

    Wanlass M W, Albin D S 2004 AIP Conf. Proc. 738 462

    [5]

    Wanlass M W, Ahrenkiel S P, Ahrenkiel R K, Albin D S, Carapella J J, Duda A, Geisz J F, Kurtz S, Moriarty T, Wehrer R J, Wernsman B 2005 31st IEEE Photovoltaics Specialists Conference Florida, USA, January 3-7, 2005 p530

    [6]

    Geisz J F, Sarah Kurtz, Wanlass M W, Ward J S, Duda A, Friedman D J, Olson J M, McMahon W E, Moriaty T E, Kiehl J T 2007 Appl. Phys. Lett. 91 023502

    [7]

    Cornfeld A B, Stan M, Varghese T, Diaz J, Ley A V, Cho B, Korostyshevsky A, Aiken D J, Sharps P R 2008 33rd IEEE Photovoltaic Specialists Conference California, USA, May 11-16, 2008 p1

    [8]

    Patel P, Aiken D, Boca A, Cho B, Chumney D, Clevenger M B, Cornfeld A, Fatemi N, Lin Y, McCarty J, Newman F, Sharps P, Spann J, Stan M, Steinfeldt J, Strautin C, Varghese T 2012 38th IEEE Photovoltaic Specialists Conference Austin, Texas, June 3-8, 2012 p110

    [9]

    Patel P, Aiken D, Chumney D, Cornfeld A, Lin Y, Mackos C, McCarty J, Miller N, Sharps P, Stan M 2012 38th IEEE Photovoltaic Specialists Conference Austin, Texas, June 3-8, 2012 p1

    [10]

    Takamoto T, Washio H, Juso H 2014 40th IEEE Photovoltaic Specialists Conference Denver, USA, June 8-13, 2014 p1

    [11]

    Chumney D, Aiken D, Cho B, Cornfeld A, Diaz J, Ley V, Mittman J, Newman F, Sharps P, Stan M, Varghese T 2010 35th IEEE Photovoltaic Specialists Conference Hawaii, USA, June 20-25, 2010 p113

    [12]

    Boisvert J, Law D, King R, Rehder E, Chiu P, Bhusari D, Fetzer C, Liu X, Hong W 2013 39th IEEE Photovoltaic Specialists Conference Florida, USA, June 16-21, 2013 p2790

    [13]

    Stan M, Aiken D, Cho B, Cornfeld A, Ley V, Patel P, Sharps P, Varghese T 2010 J. Cryst. Growth 312 1370

    [14]

    Wang D X, Song M H, Bi J F, Chen W J, Li S L, Liu G Z, Li M Y, Wu C Y 2017 Chin. Phys. Lett. 34 068801

    [15]

    Walters R J, Messenger S R, Cotal H R, Xapsos M A, Wojtczuk S J, Serreze H B, Summers G P 1997 J. Appl. Phys. 82 2164

  • [1]

    Ficcadenti M, Campesato R, Casale M, Gabetta G, Gori G, Kagan M, Kholev B A, Ivanov V 2014 10th European Space Power Conference Noordwijkerhout, Netherlands, April 13-17, 2014 p1

    [2]

    Guter W, Schöne J, Philipps S, Steiner M, Siefer G, Wekkeli A, Welser E, Oliva E, Bett A, Dimroth F 2009 Appl. Phys. Lett. 94 223504

    [3]

    Fuhrmann D, Meusel M, Ebel L, Guter W, Kubera T, Köstler W, Strobl G 2013 9 th International Conference on Concentrator Photovoltaics Miyazaki, Japan, April 15-17, 2013 p1

    [4]

    Wanlass M W, Albin D S 2004 AIP Conf. Proc. 738 462

    [5]

    Wanlass M W, Ahrenkiel S P, Ahrenkiel R K, Albin D S, Carapella J J, Duda A, Geisz J F, Kurtz S, Moriarty T, Wehrer R J, Wernsman B 2005 31st IEEE Photovoltaics Specialists Conference Florida, USA, January 3-7, 2005 p530

    [6]

    Geisz J F, Sarah Kurtz, Wanlass M W, Ward J S, Duda A, Friedman D J, Olson J M, McMahon W E, Moriaty T E, Kiehl J T 2007 Appl. Phys. Lett. 91 023502

    [7]

    Cornfeld A B, Stan M, Varghese T, Diaz J, Ley A V, Cho B, Korostyshevsky A, Aiken D J, Sharps P R 2008 33rd IEEE Photovoltaic Specialists Conference California, USA, May 11-16, 2008 p1

    [8]

    Patel P, Aiken D, Boca A, Cho B, Chumney D, Clevenger M B, Cornfeld A, Fatemi N, Lin Y, McCarty J, Newman F, Sharps P, Spann J, Stan M, Steinfeldt J, Strautin C, Varghese T 2012 38th IEEE Photovoltaic Specialists Conference Austin, Texas, June 3-8, 2012 p110

    [9]

    Patel P, Aiken D, Chumney D, Cornfeld A, Lin Y, Mackos C, McCarty J, Miller N, Sharps P, Stan M 2012 38th IEEE Photovoltaic Specialists Conference Austin, Texas, June 3-8, 2012 p1

    [10]

    Takamoto T, Washio H, Juso H 2014 40th IEEE Photovoltaic Specialists Conference Denver, USA, June 8-13, 2014 p1

    [11]

    Chumney D, Aiken D, Cho B, Cornfeld A, Diaz J, Ley V, Mittman J, Newman F, Sharps P, Stan M, Varghese T 2010 35th IEEE Photovoltaic Specialists Conference Hawaii, USA, June 20-25, 2010 p113

    [12]

    Boisvert J, Law D, King R, Rehder E, Chiu P, Bhusari D, Fetzer C, Liu X, Hong W 2013 39th IEEE Photovoltaic Specialists Conference Florida, USA, June 16-21, 2013 p2790

    [13]

    Stan M, Aiken D, Cho B, Cornfeld A, Ley V, Patel P, Sharps P, Varghese T 2010 J. Cryst. Growth 312 1370

    [14]

    Wang D X, Song M H, Bi J F, Chen W J, Li S L, Liu G Z, Li M Y, Wu C Y 2017 Chin. Phys. Lett. 34 068801

    [15]

    Walters R J, Messenger S R, Cotal H R, Xapsos M A, Wojtczuk S J, Serreze H B, Summers G P 1997 J. Appl. Phys. 82 2164

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出版历程
  • 收稿日期:  2017-05-05
  • 修回日期:  2017-06-07
  • 刊出日期:  2017-09-20

空间用倒装三结太阳能电池及其抗辐射性能研究

    基金项目: 

    天津市科技小巨人领军企业培育重大项目(批准号:14ZXLJGX00400)和天津市科技支撑计划(批准号:16YFZCGX00030)资助的课题.

摘要: 使用金属有机化学气相沉积技术,在4英寸GaAs衬底上获得了空间用GaInP/GaAs/In0.3Ga0.7As倒装三结太阳能电池.高分辨X射线衍射和阴极射线发光测试结果表明AlInGaAs应力渐变缓冲层的晶格弛豫度约100%,其整面平均穿透位错密度约5.4×106/cm2.与GaInP/InGaAs/Ge常规三结太阳能电池相比,在AM0光谱、25 ℃测试条件下,面积24 cm2的倒装三结太阳能电池转换效率达到32%,输出功率提高了5%.采用1 MeV高能电子对倒装三结电池进行粒子辐照测试,电池各项性能参数随不同辐照剂量发生改变,在1×1015/cm2辐照总剂量下电池转换效率衰降比例达到15%.

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