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使用变分法推导了InAlN/GaN异质结二维电子气波函数和基态能级的解析表达式，并讨论了InAlN/GaN异质结结构参数对二维电子气电学特性的影响.在假设二维电子气来源于表面态的前提下，使用了一个包含两个变分参数的尝试波函数推导电子总能量期望值，并通过寻找能量期望极小值确定变分参数.计算结果显示，二维电子气面密度随InAlN厚度的增大而增大，且理论结果与实验结果一致.二维电子气面密度增大抬高了基态能级与费米能级，并保持二者之差增大以容纳更多电子.InAlN/GaN界面处的极化强度失配随着In组分增大而减弱，二维电子气面密度随之减小，并导致基态能级与费米能级减小.所建立的模型能够解释InAlN/GaN异质结二维电子气的部分电学行为，并为电子输运与光学跃迁的研究提供了解析表达式.
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关键词:
- InAlN/GaN异质结 /
- 二维电子气 /
- 变分法 /
- 波函数
[1] Li Q, Zhang J W, Meng L, Hou X 2014 Phys. Status Solidi B 251 755
[2] Zhang Y, Gu S L, Ye J D, Huang S M, Gu R, Chen B, Zhu S M, Zheng Y D 2013 Acta Phys. Sin. 62 150202 (in Chinese)[张阳, 顾书林, 叶建东, 黄时敏, 顾然, 陈斌, 朱顺明, 郑有炓 2013 物理学报 62 150202]
[3] Tien N T, Thao D N, Thao P T B, Quang D N 2015 Physica B 479 62
[4] Manouchehri F, Valizadeh P, Kabir M Z 2014 J. Vac. Sci. Technol. A 32 021104
[5] Stern F 1972 Phys. Rev. B 5 4891
[6] Fouillant C, Alibert C 1994 Am. J. Phys. 62 564
[7] Hao Y, Zhang J F, Zhang J C, Ma X H, Zheng X F 2015 Chin. Sci. Bull. 60 874 (in Chinese)[郝跃, 张金风, 张进成, 马晓华, 郑雪峰 2015 科学通报 60 874]
[8] Fang Y L, Feng Z H, Yin J Y, Zhang Z R, Lv Y J, Dun S B, Liu B, Li C M, Cai S J 2015 Phys. Status Solidi B 252 1006
[9] Arulkumaran S, Ng G I, Ranjan K, Kumar C M M, Foo S C, Ang K S, Vicknesh S, Dolmanan S B, Bhat T, Tripathy S 2015 Jpn. J. Appl. Phys. 54 04DF12
[10] Goyal N, Fjeldly T A 2016 IEEE Trans. Electron Dev. 63 881
[11] Jiao W, Kong W, Li J, Collar K, Kim T H, Losurdo M, Brown A S 2016 Appl. Phys. Lett. 109 082103
[12] Gordon L, Miao M S, Chowdhury S, Higashiwaki M, Mishra U K, van de Walle C G 2010 J. Phys. D: Appl. Phys. 43 505501
[13] Quang D N, Tung N H, Tuoc V N, Minh N V, Huy H A, Hien D T 2006 Phys. Rev. B 74 205312
[14] Ando T 1982 J. Phys. Soc. Jpn. 51 3900
[15] Yang P, L Y W, Wang X B 2015 Acta Phys. Sin. 64 197303 (in Chinese)[杨鹏, 吕燕伍, 王鑫波 2015 物理学报 64 197303]
[16] Cao Y, Jena D 2007 Appl. Phys. Lett. 90 182112
[17] Kaun S W, Ahmadi E, Mazumder B, Wu F, Kyle E C H, Burke P G, Mishra U K, Speck J S 2014 Semicond. Sci. Technol. 29 045011
[18] Dong X, Li Z H, Li Z Y, Zhou J J, Li L, Li Y, Zhang L, Xu X J, Xu X, Han C L 2010 Chin. Phys. Lett. 27 037102
[19] Zhang J F, Wang P Y, Xue J S, Zhou Y B, Zhang J C, Hao Y 2011 Acta Phys. Sin. 60 117305 (in Chinese)[张金风, 王平亚, 薛军帅, 周勇波, 张进成, 郝跃 2011 物理学报 60 117305]
[20] Xue J S, Zhang J C, Zhang W, Li L, Meng F N, Lu M, Jing N, Hao Y 2012 J. Cryst. Growth 343 110
[21] Čičo K, Greguov D, Gaži, oltys J, Kuzmk J, Carlin J F, Grandjean N, Pogany D, Frhlich K 2010 Phys. Status Solidi C 7 108
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[1] Li Q, Zhang J W, Meng L, Hou X 2014 Phys. Status Solidi B 251 755
[2] Zhang Y, Gu S L, Ye J D, Huang S M, Gu R, Chen B, Zhu S M, Zheng Y D 2013 Acta Phys. Sin. 62 150202 (in Chinese)[张阳, 顾书林, 叶建东, 黄时敏, 顾然, 陈斌, 朱顺明, 郑有炓 2013 物理学报 62 150202]
[3] Tien N T, Thao D N, Thao P T B, Quang D N 2015 Physica B 479 62
[4] Manouchehri F, Valizadeh P, Kabir M Z 2014 J. Vac. Sci. Technol. A 32 021104
[5] Stern F 1972 Phys. Rev. B 5 4891
[6] Fouillant C, Alibert C 1994 Am. J. Phys. 62 564
[7] Hao Y, Zhang J F, Zhang J C, Ma X H, Zheng X F 2015 Chin. Sci. Bull. 60 874 (in Chinese)[郝跃, 张金风, 张进成, 马晓华, 郑雪峰 2015 科学通报 60 874]
[8] Fang Y L, Feng Z H, Yin J Y, Zhang Z R, Lv Y J, Dun S B, Liu B, Li C M, Cai S J 2015 Phys. Status Solidi B 252 1006
[9] Arulkumaran S, Ng G I, Ranjan K, Kumar C M M, Foo S C, Ang K S, Vicknesh S, Dolmanan S B, Bhat T, Tripathy S 2015 Jpn. J. Appl. Phys. 54 04DF12
[10] Goyal N, Fjeldly T A 2016 IEEE Trans. Electron Dev. 63 881
[11] Jiao W, Kong W, Li J, Collar K, Kim T H, Losurdo M, Brown A S 2016 Appl. Phys. Lett. 109 082103
[12] Gordon L, Miao M S, Chowdhury S, Higashiwaki M, Mishra U K, van de Walle C G 2010 J. Phys. D: Appl. Phys. 43 505501
[13] Quang D N, Tung N H, Tuoc V N, Minh N V, Huy H A, Hien D T 2006 Phys. Rev. B 74 205312
[14] Ando T 1982 J. Phys. Soc. Jpn. 51 3900
[15] Yang P, L Y W, Wang X B 2015 Acta Phys. Sin. 64 197303 (in Chinese)[杨鹏, 吕燕伍, 王鑫波 2015 物理学报 64 197303]
[16] Cao Y, Jena D 2007 Appl. Phys. Lett. 90 182112
[17] Kaun S W, Ahmadi E, Mazumder B, Wu F, Kyle E C H, Burke P G, Mishra U K, Speck J S 2014 Semicond. Sci. Technol. 29 045011
[18] Dong X, Li Z H, Li Z Y, Zhou J J, Li L, Li Y, Zhang L, Xu X J, Xu X, Han C L 2010 Chin. Phys. Lett. 27 037102
[19] Zhang J F, Wang P Y, Xue J S, Zhou Y B, Zhang J C, Hao Y 2011 Acta Phys. Sin. 60 117305 (in Chinese)[张金风, 王平亚, 薛军帅, 周勇波, 张进成, 郝跃 2011 物理学报 60 117305]
[20] Xue J S, Zhang J C, Zhang W, Li L, Meng F N, Lu M, Jing N, Hao Y 2012 J. Cryst. Growth 343 110
[21] Čičo K, Greguov D, Gaži, oltys J, Kuzmk J, Carlin J F, Grandjean N, Pogany D, Frhlich K 2010 Phys. Status Solidi C 7 108
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