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物理学报. 2003, 52(3): 677-682.
doi: 10.7498/aps.52.677.
量子点器件的三端电测量研究
- 收稿日期: 2002-06-05
- 修回日期: 2002-07-29
- 刊出日期: 2005-04-03
English Abstract
Investigations of three-terminal electronic measurement on quantum dot devices
- Received Date:
05 June 2002
- Accepted Date:
29 July 2002
- Published Online:
03 April 2005
Abstract: Theree-terminal electronic measurements have been performed on quantum devices with a modulation-doped two-dimensional(2D) electron gas structure.The resistance with the 2D electron gas and that with the tunnel resistance through the dots can be obtained by analyzing the experimental data.Our results show that the lateral coupling between the quantum dots mainly determine the transport properties of the quantum dot devices under small biases.
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