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物理学报. 2004, 53(12): 4410-4413.
doi: 10.7498/aps.53.4410.
等离子体增强化学气相沉积法实现硅纳米线掺硼
- 收稿日期: 2003-11-03
- 修回日期: 2004-04-19
- 刊出日期: 2004-06-05
English Abstract
Boron-doped silicon nanowires grown by plasmaenhanced chemical vapor deposition
- Received Date:
03 November 2003
- Accepted Date:
19 April 2004
- Published Online:
05 June 2004
Abstract: Boron-doped (B-doped) silicon nanowires have been successfully synthesi zed by plasma-enhanced chemical vapor deposition (PECVD) at 440℃ using silane as the Si source, diborane(（B2H6）) as the dopant gas and Au as the catalyst. It is desirable to extend this technique to the growth of silicon nanowire pn jun ctions because PECVD enables immense chemical reactivity.
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Keywords:
- silicon nanowires /
- chemical vapor deposition /
- nano-devices
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