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中国物理学会期刊

GaAs/GaAlAs多量子阱的光致荧光诊断

CSTR: 32037.14.aps.37.906

PHOTOLUMINESCENCE DIAGNOSIS OF GaAs/GaAlAs MULTIPLE QUANTUM WELLS

CSTR: 32037.14.aps.37.906
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  • 利用光致荧光技术对GaAs/GaAlAs多量子阱质量进行了诊断。讨论了量子阱厚度涨落,铝成份涨落,各种缺陷和非故意掺杂等对量子阱光致荧光谱的影响,并反过来,又由光致荧光谱来推断引起量子阱质量退化的原因。在一定程度上为分子束外延工艺的改进提供了依据。

     

    Photoluminescence technique are used to diagnose the quality of quantum wells. The influences on the fluorescence spectra of quantum wells due to thickness fluctuations of quantum wells, fluctuation of aluminium content, various defects, and unintentional impurities, are discussed. And inversely, the possible reasons causing degradation of quantum wells are deduced from the photoluminescence spectra. To some extent the diagnosis can provide certain basic information for improving the molecular beam epitaxy technology.

     

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