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Ar离子注入YBa2Cu3O7-x超导薄膜后,不仅会引起样品超导转变温度Tc和临界电流密度Jc的下降,还会使样品的正常态由金属型变为半导体型。透射电子显微镜观察发现在小剂量(12Ar/cm2)注入情况下,样品的晶格结构几乎不受影响。随着注入剂量的增加,晶格损伤越来越严重,最终变成非晶态。对实验结果的分析表明,Ar离子注入引起YBa2<Ar ion implantation induced superconductivity change and structural change in YBa2Cu3O7-x epitaxial films have been studied. After implantation, not only Jc and Tc of the sa-mples decreased with the increasing of Ar ion fluence, but also a metal-to-semiconducfor transition occurred. The TEM photographs showed that the lattice frame of the implanted sa-mples was nearly unchanged under low fluence. Only at high fluence, the structure was comple-tely destroyed. According to the experimental results, we suggest that the degradation of Jc and Tc may mainly result from the disordering of oxygen sublattice.
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