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物理学报. 1998, 47(1): 83-88.
doi: 10.7498/aps.47.83.
a-C∶H(N)薄膜结构的X射线光电子能谱分析
- 收稿日期: 1997-03-17
- 修回日期: 1997-04-21
- 刊出日期: 1998-01-20
摘要: 采用直流-射频等离子增强化学汽相沉积技术制备a-C∶H(N)薄膜，用X射线光电子能谱研究了混合气体中N2含量对薄膜成分与结构的影响.a-C∶H(N)薄膜中含氮量可达9.09%.对a-C∶H(N)薄膜的C1s和N1s结合能谱的分析表明a-C∶H(N)薄膜的结构是由C3N4相镶嵌在sp2键结合的CNx基体中组成.其中C3N4相中N和C原子比接近4∶3，不随薄
English Abstract
STUDY ON THE STRUCTURE OF a-C∶H(N) FILMS BY XPS
- Received Date:
17 March 1997
- Accepted Date:
21 April 1997
- Published Online:
20 January 1998
Abstract: The a-C∶H(N) films was deposited from the mixture of C2H2 and N2 by rf-dc plasma enhanced chemical vapor deposition. The influence of N2 percentage in the mixture on the composition and structure of a-C∶H(N) films was studied by XPS. As the N2 percentage in the feed gas was increased from 0% to 75%, up to 9.09% N was incorporated in the film. The results of analysing C1s and N1s core level indicated that a-C∶H(N) films are consisted of stoichiometry C3N4 phase and CHx matrix which is identified as predominantly sp2 bonded structure. The N/C ratio of C3N4 phase is near 4/3. The N atoms incorporated in the films is useful to increase the content of C3N4 phase and sp3/sp2 ratio.
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