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中国物理学会期刊

赝形InGaAs/InAlAs渐变异质结中的零磁场自旋分裂

CSTR: 32037.14.aps.48.121

SPIN SPLITTING IN PSEUDOMORPHIC InGaAs/InAlAs GRADED HETEROSTRUCTURES AS B→0

CSTR: 32037.14.aps.48.121
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  • 在赝形渐变InGaAs/In0.52Al0.48As异质结的二维电子气中,发现了自旋方向向上的电子和自旋向下的电子在零磁场下存在着自旋分裂.利用Shubnikov-de Haas振荡研究了异质结中的自旋分裂行为,通过振荡中的拍频现象,发现了零磁场下的自旋分裂量为8.76meV.

     

    The spin splitting in zero magnetic field between the up- and down-spin electrons in a two-dimensional electron gas is obtained for a pseudomorphic InGaAs/In0.52Al0.48As graded heterostructure.We have studied the spin splitting in the heterostructure by means of the Shubnikov-de Haas oscillations.By analyzing the characteristic beating pattern of the oscillations,a spin splitting of 8.76meV was determined as B→0.

     

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