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中国物理学会期刊

高温处理对CNx薄膜晶化的影响

CSTR: 32037.14.aps.49.173

Effect of High-Temperature Treatment on the Crystallization of CNx Thin Films

CSTR: 32037.14.aps.49.173
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  • 利用直流磁控溅射制得非晶态氮化碳膜,然后在高温下、常压N气氛中进行热处理,利用DTA,XRD和Auger研究晶化前后氮化碳成分、结构以及键态的变化.实验结果表明:在1186℃附近出现了晶化现象,高温晶化处理可以促进无定形氮化碳向晶态转变,在XRD图谱上出现αC3N4衍射峰.Auger实验结果表明膜中出现富C,Si,N的区域

     

    The amorphous carbon nitride films were prepared by dc magnetron sputtering first and then were heat-treated at high temperature.DTA XRD Auger spectroscopy wer e used to study the difference of composition structure before and after heat-t reatment.The results showed that crystallization occurred at 1186℃.Heat-treatm ent can induce the crystallization of carbon nitride and the diffraction peaks a ppeared in the XRD pattern.The results of Auger spectroscopy also showed that th ere existed SiCN-riched area and the content of N decreased.

     

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