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Curviform surface breaks the symmetrical shape of silicon quantum dots on which some bonds can produce localized electronic states in band gap. The calculation results show that the bonding energy and electronic states of silicon quantum dots are different on various curved surfaces, for example, an Si–O–Si bridge bond on curved surface provides the localized levels in band gap and its bonding energy is shallower than that on facet. The red-shifting of PL spectrum on smaller silicon quantum dots can be explained by curved surface effect. Experiments demonstrate that silicon quantum dots are activated for emission due to the localized levels formed in the band gap.
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Keywords:
- Si quantum dots /
- curved surface effect /
- surface bonds /
- localized levels
[1] Sychugov I, Juhasz R, Valenta J, Linnros J 2005 Phys. Rev. Lett. 94 087405
[2] Hirschman K D, Tsybeskov L, Duttagupta S P, Fauchet P M 1996 Nature 384 338
[3] Fauchet P M, Ruan J, Chen H, Pavesi L, Negro L D, Cazzaneli M, Elliman R G, Smith N, Smoc M, Luther-Davies B 2005 Opt. Mater. 27 745
[4] Huang W Q, Jin F, Wang H X, Xu L, Wu K Y, Liu S R, Qin C J 2008 Appl. Phys. Lett. 92 221910
[5] Faraci G, Gibilisco S, Pennisi A R, Franzo G, Rosa S L, Lozzi L 2008 Phys. Rev. B 78 245425
[6] Huang W Q, Lü Q, Wang X Y, Zhang R T, Yu S Q 2011 Acta Phys. Sin. 60 017805 (in Chinese) [黄伟其, 吕泉, 王晓允, 张荣涛, 于示强 2011 物理学报 60 017805]
[7] Wolkin M V, Jorne J, Fauchet P M 1999 Phys. Rev. Lett. 82 197
[8] Hadjisavvas G, Remediakis I N, Kelires P C 2006 Phys. Rev. B 74 165419
[9] Cruz M, Wang C, Beltrán M R, Tageña-Martínez J 1996 Phys. Rev. B 53 3828
[10] Huang W Q, Xu L, Wu K Y 2007 J. Appl. Phys. 102 053517
[11] Huang W Q, Zhang R T, Wang H X, Jin F, Xu L, Qin S J, Wu K Y, Liu S R, Qin C J 2008 Opt. Commun. 281 5229
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[1] Sychugov I, Juhasz R, Valenta J, Linnros J 2005 Phys. Rev. Lett. 94 087405
[2] Hirschman K D, Tsybeskov L, Duttagupta S P, Fauchet P M 1996 Nature 384 338
[3] Fauchet P M, Ruan J, Chen H, Pavesi L, Negro L D, Cazzaneli M, Elliman R G, Smith N, Smoc M, Luther-Davies B 2005 Opt. Mater. 27 745
[4] Huang W Q, Jin F, Wang H X, Xu L, Wu K Y, Liu S R, Qin C J 2008 Appl. Phys. Lett. 92 221910
[5] Faraci G, Gibilisco S, Pennisi A R, Franzo G, Rosa S L, Lozzi L 2008 Phys. Rev. B 78 245425
[6] Huang W Q, Lü Q, Wang X Y, Zhang R T, Yu S Q 2011 Acta Phys. Sin. 60 017805 (in Chinese) [黄伟其, 吕泉, 王晓允, 张荣涛, 于示强 2011 物理学报 60 017805]
[7] Wolkin M V, Jorne J, Fauchet P M 1999 Phys. Rev. Lett. 82 197
[8] Hadjisavvas G, Remediakis I N, Kelires P C 2006 Phys. Rev. B 74 165419
[9] Cruz M, Wang C, Beltrán M R, Tageña-Martínez J 1996 Phys. Rev. B 53 3828
[10] Huang W Q, Xu L, Wu K Y 2007 J. Appl. Phys. 102 053517
[11] Huang W Q, Zhang R T, Wang H X, Jin F, Xu L, Qin S J, Wu K Y, Liu S R, Qin C J 2008 Opt. Commun. 281 5229
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