Mg0.57Zn0.43O合金薄膜生长及性能表征

秦杰明; 曹建明; 蒋大勇

doi:10.7498/aps.62.138101

摘要

本文利用金属有机气相沉积法(MOCVD)生长单一立方相Mg0.57Zn0.43O (记作立方MZO)合金薄膜, 以及该合金薄膜在后期热处理过程中质量和热稳定性的关系. 通过X射线衍射等测试发现, 后期热处理对于立方MZO合金薄膜质量具有较大的影响. 其中在500850℃的条件下, 合金薄膜的结晶质量和表面形貌随温度的增加得到明显的改善, 吸收截止边逐渐蓝移,带隙展宽, 但仍保持单一立方结构. 当温度达到950℃时立方MZO合金薄膜出现混合相. 通过对立方MZO合金薄膜制备的MSM型单元器件进行光响应的测试表明, 在外加15 V的偏压下, 器件的响应峰值在260 nm附近,紫外/可见抑制比大约为4个数量级, 饱和响应度为3.8 mA/W, 暗电流值为5 pA左右.

关键词:

MOCVD /
Mg0.57Zn0.43O /
热处理 /
光响应

Abstract

We report the growth of single cubic phase Mg0.57Zn0.43O (MZO) alloy film through the method of metal organic chemical vapor deposition (MOCVD) and the relation between the quality and thermal stability of the alloy film after heat treatment. From X-ray measurement, we found that the quality of cubic MZO film was significantly influenced by the heating temperature. At 500-850℃, the crystallization and surface morphology of the alloy film were improved obviously as the temperature increased. Also, the blue shift of absorption cut-off edge, broadened band gap and maintained single cubic structure were found with increasing temperature. However, up to 950℃, mixed phases were formed in cubic MZO alloy film. For the photoresponse measurement of the MSM unit devices synthesized by the cubic MZO alloy film under 15 V bias, we found that the response peak of devices was around 260 nm, rejection ratio of UV/Vis was about 4 orders of magnitude, saturated responsibility was 3.8 mA/W and the value of dark current was about 5 pA.

Keywords:

作者及机构信息

1.
长春理工大学材料科学与工程学院, 长春 130022;

2.
内蒙古民族大学物理学院, 通辽 028000

基金项目: 国家自然科学基金(批准号: 61106050, 21201022); 内蒙古自然科学基金(批准号: 2010MS0105)和吉林大学超硬材料国家重点实验室开放项目资助的课题.

Authors and contacts

1.
Institute of Materials Science and Engineering, Changchun University of Science and Technology, Changchun 130022, China;

2.
College of Physics, Inner Mongolia University of the Nationalities, Tongliao 028000, China

Funds: Project supported by the National Natural Science Foundation of China (Grant Nos. 61106050, 21201022), the Natural Science Foundation of Inner Mongolia, China (Grant No. 2010MS0105), and the Open Project of State Key Laboratory of Superhard Materials (Jilin University).

参考文献

[1]	Yang W, Hullavarad S S, Nagaraj B, Takeuchi I, Sharma R P, Venkatesan T 2003 Appl. Phys. Lett. 82 3424
[2]	Choopun S, Vispute R D, Yang W, Sharma R P, Venkatesan T 2002 Appl. Phys. Lett. 80 1529
[3]	Park W I, Yi Y C, Jang H M 2001 Appl. Phys. Lett. 79 2022
[4]	Minemoto T, Negami T, Nishiwaki S, Takakura H, Hamakawa Y 2000 Thin. Solid. Films. 32 173
[5]	Chen J, Shen W Z, Chen N B, Qiu D J, Wu H Z 2003 J. Phys. C 15 475
[6]	Ohtomo A, Kawasaki M, Koida T, Masubuchi K, Koinuma H 1999 Appl. Phys. Lett. 75 980
[7]	Xin P, Sun C W, Qin F W, Wen S P, Zhang Q Y 2007 Acta Phys. Sin. 56 1082 (in Chinese) [辛萍, 孙成伟, 秦福文, 文胜平, 张庆瑜 2007 物理学报 56 1082]
[8]	Sharma A K, Narayan J, Muth J F, Teng C W, Jin C, Kvit A, Kolbas R M, Holland O W 1999 Appl. Phys. Lett. 53 327
[9]	Lin B X, Fu Z X, Jia Y B, Liao G H 2001 Acta Phys. Sin. 50 2208 (in Chinese) [林碧霞, 傅竹西, 贾云波, 廖桂红 2001 物理学报 50 2208]
[10]	Qin J M, Wang H, Zeng F M, Li J L, Wan Y C, Liu J H 2010 Acta Phys. Sin. 59 8910 (in Chinese) [秦杰明, 王皓, 曾繁明, 李建利, 万玉春, 刘景和 2010 物理学报 59 8910]
[11]	Choopun S, Vispute R D, Yan W, Sharma R P, Venkatesan T, Shen H 2002 Appl. Phys. Lett. 80 1529
[12]	Ju Z G, Shan C X, Yang C L, Zhang J Y, Yao B, Zhao D X, Shen D Z 2009 Appl. Phys. Lett. 94 101902
[13]	Bendersky L A, Takeuchi I, Chang K S, Yang W, Hullavarad S, Vispute R D 2005 J. Appl. Phys. 98 083526

施引文献

[1]	Yang W, Hullavarad S S, Nagaraj B, Takeuchi I, Sharma R P, Venkatesan T 2003 Appl. Phys. Lett. 82 3424
[2]	Choopun S, Vispute R D, Yang W, Sharma R P, Venkatesan T 2002 Appl. Phys. Lett. 80 1529
[3]	Park W I, Yi Y C, Jang H M 2001 Appl. Phys. Lett. 79 2022
[4]	Minemoto T, Negami T, Nishiwaki S, Takakura H, Hamakawa Y 2000 Thin. Solid. Films. 32 173
[5]	Chen J, Shen W Z, Chen N B, Qiu D J, Wu H Z 2003 J. Phys. C 15 475
[6]	Ohtomo A, Kawasaki M, Koida T, Masubuchi K, Koinuma H 1999 Appl. Phys. Lett. 75 980
[7]	Xin P, Sun C W, Qin F W, Wen S P, Zhang Q Y 2007 Acta Phys. Sin. 56 1082 (in Chinese) [辛萍, 孙成伟, 秦福文, 文胜平, 张庆瑜 2007 物理学报 56 1082]
[8]	Sharma A K, Narayan J, Muth J F, Teng C W, Jin C, Kvit A, Kolbas R M, Holland O W 1999 Appl. Phys. Lett. 53 327
[9]	Lin B X, Fu Z X, Jia Y B, Liao G H 2001 Acta Phys. Sin. 50 2208 (in Chinese) [林碧霞, 傅竹西, 贾云波, 廖桂红 2001 物理学报 50 2208]
[10]	Qin J M, Wang H, Zeng F M, Li J L, Wan Y C, Liu J H 2010 Acta Phys. Sin. 59 8910 (in Chinese) [秦杰明, 王皓, 曾繁明, 李建利, 万玉春, 刘景和 2010 物理学报 59 8910]
[11]	Choopun S, Vispute R D, Yan W, Sharma R P, Venkatesan T, Shen H 2002 Appl. Phys. Lett. 80 1529
[12]	Ju Z G, Shan C X, Yang C L, Zhang J Y, Yao B, Zhao D X, Shen D Z 2009 Appl. Phys. Lett. 94 101902
[13]	Bendersky L A, Takeuchi I, Chang K S, Yang W, Hullavarad S, Vispute R D 2005 J. Appl. Phys. 98 083526

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