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采用直流磁控溅射和后退火工艺先在掺Al氧化锌(AZO)导电玻璃基底上制备了高质量的VO2薄膜,再在VO2膜层上制备AZO导电膜,最终制备出了AZO/VO2/AZO三明治结构.测试了VO2/AZO复合薄膜和AZO/VO2/AZO三明治结构的组分、微结构以及光学特性,结果表明VO2/AZO复合薄膜在8002300 nm红外区域其相变前后的最大透过率差值达24%,而AZO/VO2/AZO三明治结构在相同波长范围内其相变前后的最大透过率差值可达31%.通过在AZO/VO2/AZO三明治结构导电膜层上施加不同电压,观察到不同外界温度下电流的突变,当外界温度越高,所需阈值电压越低.AZO/VO2/AZO三明治结构性能稳定,制备工艺简单,有望应用于集成式红外光调制器.
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关键词:
- AZO/VO2/AZO /
- 光透过率 /
- 相变 /
- 阈值电压
[1] Morin F J 1959 Phys. Rev. Lett. 3 34
[2] Lee M H, Kim M G, Song H K 1996 Thin Solid Films 290 30
[3] Maaza M, Hamidi D, Gibaud A, Kana J B K 2011 ICTON 29 1
[4] Brassard D, Fourmaux S, Jean-Jacques M, Kieffer J C 2005 Appl. Phys. Lett. 87 51910
[5] Chen C H, Fan Z Y 2009 Appl. Phys. Lett. 95 262106
[6] Chae B G, Kim H T, Youn D H, Kang K Y 2005 Physica B 369 76
[7] Lee J S, Ortolani M, Ginolas A, Chang Y J, Noh T W, Schade U 2007 Physica C 460 549
[8] Zhang K L, Wei X Y, Wang F, Wu C Q, Zhao J S 2011 J. Optoelectronics·Laser 22 656(in Chinese)[张楷亮, 韦晓莹, 王芳, 武长强, 赵金石2011光电子·激光 22 656]
[9] Fang B Y, Li Y, Tong G X, Wang X H, Yan M, Liang Q, Wang F, Qin Y, Ding J, Chen S J, Chen J K, Zheng H Z, Yuan W R 2015 Opt. Mater. 47 225
[10] Seo G, Kim B J, Ko C, Cui Y, Lee Y W, Shin J H, Ramanathan S, Kim H T 2011 IEEE Electron Dev. Lett. 32 1582
[11] Soltani M, Chaker M, Haddad E, Kruzelecky R 2006 Mea. Sci. Technol. 17 1052
[12] Kanki T, Hotta Y, Asakawa N, Kawai T, Tanaka H 2010 Appl. Phys. Lett. 96 242108
[13] Stefanovich G, Pergament A, Stefanovich D 2000 J. Phys.:Conden. Matter 12 8837
[14] Liang J R, Hu M, Kan Q, Hou S B, Liang X Q, Chen H D 2012 Nanotechnology and Precision Engineering 10 160(in Chinese)[梁继然, 胡明, 阚强, 后顺保, 梁秀琴, 陈弘达2012纳米技术与精密工程 10 160]
[15] Qiu D H, Wen Q Y, Yang Q H, Chen Z, Jing Y L, Zhang H W 2013 Acta Phys. Sin. 62 217201 (in Chinese)[邱东鸿, 文岐业, 杨青慧, 陈智, 荆玉兰, 张怀武2013物理学报 62 217201]
[16] Lee J S, Ortolani M, Kouba J, Firsov A, Chang Y J, Noh T W, Schade U 2008 Infrared Phys. Technol. 51 443
[17] Xiong Y, Wen Q Y, Tian W, Mao Q, Chen Z, Yang Q H, Jing Y L 2015 Acta Phys. Sin. 64 017202 (in Chinese)[熊瑛, 文岐业, 田伟, 毛淇, 陈智, 杨青慧, 荆玉兰2015物理学报 64 017102]
[18] Markov P, Ryckman J D, Marvel R E, Hallman K A, Haglund R F, Weiss S M 2013 CLEO 2013 CTu2F.7
[19] Schuler T, Aegerter M A 1999 Thin Solid Films 351 125
[20] Perkins J D, Cueto J A D, Alleman J L, Warmsinghb C, Keyesa B M, Gedvilasa L M, Parillaa P A, Toa B, Readeyb D W, Ginleya D S 2002 Thin Solid Films 411 152
[21] Yuan W R, Li Y, Wang X H, Zheng H Z, Chen S J, Chen J K, Sun Y, Tang J Y, Liu F, Hao R L, Fang B Y, Xiao H 2014 Acta Phys. Sin. 63 218101 (in Chinese)[袁文瑞, 李毅, 王晓华, 郑鸿柱, 陈少娟, 陈建坤, 孙瑶, 唐佳茵, 刘飞, 郝如龙, 方宝英, 肖寒2014物理学报 63 218101]
[22] Xiao H, Li Y, Yuan W R, Fang B Y, Wang X H, Hao R L, Wu Z Y, Xu T T, Jiang W, Chen P Z 2016 Infrared Phys. Technol. 76 580
-
[1] Morin F J 1959 Phys. Rev. Lett. 3 34
[2] Lee M H, Kim M G, Song H K 1996 Thin Solid Films 290 30
[3] Maaza M, Hamidi D, Gibaud A, Kana J B K 2011 ICTON 29 1
[4] Brassard D, Fourmaux S, Jean-Jacques M, Kieffer J C 2005 Appl. Phys. Lett. 87 51910
[5] Chen C H, Fan Z Y 2009 Appl. Phys. Lett. 95 262106
[6] Chae B G, Kim H T, Youn D H, Kang K Y 2005 Physica B 369 76
[7] Lee J S, Ortolani M, Ginolas A, Chang Y J, Noh T W, Schade U 2007 Physica C 460 549
[8] Zhang K L, Wei X Y, Wang F, Wu C Q, Zhao J S 2011 J. Optoelectronics·Laser 22 656(in Chinese)[张楷亮, 韦晓莹, 王芳, 武长强, 赵金石2011光电子·激光 22 656]
[9] Fang B Y, Li Y, Tong G X, Wang X H, Yan M, Liang Q, Wang F, Qin Y, Ding J, Chen S J, Chen J K, Zheng H Z, Yuan W R 2015 Opt. Mater. 47 225
[10] Seo G, Kim B J, Ko C, Cui Y, Lee Y W, Shin J H, Ramanathan S, Kim H T 2011 IEEE Electron Dev. Lett. 32 1582
[11] Soltani M, Chaker M, Haddad E, Kruzelecky R 2006 Mea. Sci. Technol. 17 1052
[12] Kanki T, Hotta Y, Asakawa N, Kawai T, Tanaka H 2010 Appl. Phys. Lett. 96 242108
[13] Stefanovich G, Pergament A, Stefanovich D 2000 J. Phys.:Conden. Matter 12 8837
[14] Liang J R, Hu M, Kan Q, Hou S B, Liang X Q, Chen H D 2012 Nanotechnology and Precision Engineering 10 160(in Chinese)[梁继然, 胡明, 阚强, 后顺保, 梁秀琴, 陈弘达2012纳米技术与精密工程 10 160]
[15] Qiu D H, Wen Q Y, Yang Q H, Chen Z, Jing Y L, Zhang H W 2013 Acta Phys. Sin. 62 217201 (in Chinese)[邱东鸿, 文岐业, 杨青慧, 陈智, 荆玉兰, 张怀武2013物理学报 62 217201]
[16] Lee J S, Ortolani M, Kouba J, Firsov A, Chang Y J, Noh T W, Schade U 2008 Infrared Phys. Technol. 51 443
[17] Xiong Y, Wen Q Y, Tian W, Mao Q, Chen Z, Yang Q H, Jing Y L 2015 Acta Phys. Sin. 64 017202 (in Chinese)[熊瑛, 文岐业, 田伟, 毛淇, 陈智, 杨青慧, 荆玉兰2015物理学报 64 017102]
[18] Markov P, Ryckman J D, Marvel R E, Hallman K A, Haglund R F, Weiss S M 2013 CLEO 2013 CTu2F.7
[19] Schuler T, Aegerter M A 1999 Thin Solid Films 351 125
[20] Perkins J D, Cueto J A D, Alleman J L, Warmsinghb C, Keyesa B M, Gedvilasa L M, Parillaa P A, Toa B, Readeyb D W, Ginleya D S 2002 Thin Solid Films 411 152
[21] Yuan W R, Li Y, Wang X H, Zheng H Z, Chen S J, Chen J K, Sun Y, Tang J Y, Liu F, Hao R L, Fang B Y, Xiao H 2014 Acta Phys. Sin. 63 218101 (in Chinese)[袁文瑞, 李毅, 王晓华, 郑鸿柱, 陈少娟, 陈建坤, 孙瑶, 唐佳茵, 刘飞, 郝如龙, 方宝英, 肖寒2014物理学报 63 218101]
[22] Xiao H, Li Y, Yuan W R, Fang B Y, Wang X H, Hao R L, Wu Z Y, Xu T T, Jiang W, Chen P Z 2016 Infrared Phys. Technol. 76 580
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