基于AZO/VO2/AZO结构的电压诱导相变红外光调制器

徐婷婷; 李毅; 陈培祖; 蒋蔚; 伍征义; 刘志敏; 张娇; 方宝英; 王晓华; 肖寒

doi:10.7498/aps.65.248102

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摘要

采用直流磁控溅射和后退火工艺先在掺Al氧化锌（AZO）导电玻璃基底上制备了高质量的VO2薄膜，再在VO2膜层上制备AZO导电膜，最终制备出了AZO/VO2/AZO三明治结构.测试了VO2/AZO复合薄膜和AZO/VO2/AZO三明治结构的组分、微结构以及光学特性，结果表明VO2/AZO复合薄膜在8002300 nm红外区域其相变前后的最大透过率差值达24%，而AZO/VO2/AZO三明治结构在相同波长范围内其相变前后的最大透过率差值可达31%.通过在AZO/VO2/AZO三明治结构导电膜层上施加不同电压，观察到不同外界温度下电流的突变，当外界温度越高，所需阈值电压越低.AZO/VO2/AZO三明治结构性能稳定，制备工艺简单，有望应用于集成式红外光调制器.

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作者及机构信息

1.
上海理工大学光电信息与计算机工程学院, 上海 200093;

2.
上海市现代光学系统重点实验室, 上海 200093;

3.
上海电力学院电子与信息工程学院, 上海 200090;

4.
上海健康医学院医学影像学院, 上海 201318

通信作者: 李毅, optolyclp@263.net

基金项目: 国家高技术研究发展计划（批准号：2006AA03Z348）、教育部科学技术研究重点项目（批准号：207033）、上海市科学技术委员会科技攻关计划（批准号：06DZ11415）、上海市教育委员会科技创新重点项目（批准号：10ZZ94）和上海市领军人才培养计划（批准号：2011-026）资助的课题.

参考文献

[1]	Morin F J 1959 Phys. Rev. Lett. 3 34
[2]	Lee M H, Kim M G, Song H K 1996 Thin Solid Films 290 30
[3]	Maaza M, Hamidi D, Gibaud A, Kana J B K 2011 ICTON 29 1
[4]	Brassard D, Fourmaux S, Jean-Jacques M, Kieffer J C 2005 Appl. Phys. Lett. 87 51910
[5]	Chen C H, Fan Z Y 2009 Appl. Phys. Lett. 95 262106
[6]	Chae B G, Kim H T, Youn D H, Kang K Y 2005 Physica B 369 76
[7]	Lee J S, Ortolani M, Ginolas A, Chang Y J, Noh T W, Schade U 2007 Physica C 460 549
[8]	Zhang K L, Wei X Y, Wang F, Wu C Q, Zhao J S 2011 J. Optoelectronics·Laser 22 656(in Chinese)[张楷亮, 韦晓莹, 王芳, 武长强, 赵金石2011光电子·激光 22 656]
[9]	Fang B Y, Li Y, Tong G X, Wang X H, Yan M, Liang Q, Wang F, Qin Y, Ding J, Chen S J, Chen J K, Zheng H Z, Yuan W R 2015 Opt. Mater. 47 225
[10]	Seo G, Kim B J, Ko C, Cui Y, Lee Y W, Shin J H, Ramanathan S, Kim H T 2011 IEEE Electron Dev. Lett. 32 1582
[11]	Soltani M, Chaker M, Haddad E, Kruzelecky R 2006 Mea. Sci. Technol. 17 1052
[12]	Kanki T, Hotta Y, Asakawa N, Kawai T, Tanaka H 2010 Appl. Phys. Lett. 96 242108
[13]	Stefanovich G, Pergament A, Stefanovich D 2000 J. Phys.:Conden. Matter 12 8837
[14]	Liang J R, Hu M, Kan Q, Hou S B, Liang X Q, Chen H D 2012 Nanotechnology and Precision Engineering 10 160(in Chinese)[梁继然, 胡明, 阚强, 后顺保, 梁秀琴, 陈弘达2012纳米技术与精密工程 10 160]
[15]	Qiu D H, Wen Q Y, Yang Q H, Chen Z, Jing Y L, Zhang H W 2013 Acta Phys. Sin. 62 217201 (in Chinese)[邱东鸿, 文岐业, 杨青慧, 陈智, 荆玉兰, 张怀武2013物理学报 62 217201]
[16]	Lee J S, Ortolani M, Kouba J, Firsov A, Chang Y J, Noh T W, Schade U 2008 Infrared Phys. Technol. 51 443
[17]	Xiong Y, Wen Q Y, Tian W, Mao Q, Chen Z, Yang Q H, Jing Y L 2015 Acta Phys. Sin. 64 017202 (in Chinese)[熊瑛, 文岐业, 田伟, 毛淇, 陈智, 杨青慧, 荆玉兰2015物理学报 64 017102]
[18]	Markov P, Ryckman J D, Marvel R E, Hallman K A, Haglund R F, Weiss S M 2013 CLEO 2013 CTu2F.7
[19]	Schuler T, Aegerter M A 1999 Thin Solid Films 351 125
[20]	Perkins J D, Cueto J A D, Alleman J L, Warmsinghb C, Keyesa B M, Gedvilasa L M, Parillaa P A, Toa B, Readeyb D W, Ginleya D S 2002 Thin Solid Films 411 152
[21]	Yuan W R, Li Y, Wang X H, Zheng H Z, Chen S J, Chen J K, Sun Y, Tang J Y, Liu F, Hao R L, Fang B Y, Xiao H 2014 Acta Phys. Sin. 63 218101 (in Chinese)[袁文瑞, 李毅, 王晓华, 郑鸿柱, 陈少娟, 陈建坤, 孙瑶, 唐佳茵, 刘飞, 郝如龙, 方宝英, 肖寒2014物理学报 63 218101]
[22]	Xiao H, Li Y, Yuan W R, Fang B Y, Wang X H, Hao R L, Wu Z Y, Xu T T, Jiang W, Chen P Z 2016 Infrared Phys. Technol. 76 580

施引文献

[1]	Morin F J 1959 Phys. Rev. Lett. 3 34
[2]	Lee M H, Kim M G, Song H K 1996 Thin Solid Films 290 30
[3]	Maaza M, Hamidi D, Gibaud A, Kana J B K 2011 ICTON 29 1
[4]	Brassard D, Fourmaux S, Jean-Jacques M, Kieffer J C 2005 Appl. Phys. Lett. 87 51910
[5]	Chen C H, Fan Z Y 2009 Appl. Phys. Lett. 95 262106
[6]	Chae B G, Kim H T, Youn D H, Kang K Y 2005 Physica B 369 76
[7]	Lee J S, Ortolani M, Ginolas A, Chang Y J, Noh T W, Schade U 2007 Physica C 460 549
[8]	Zhang K L, Wei X Y, Wang F, Wu C Q, Zhao J S 2011 J. Optoelectronics·Laser 22 656(in Chinese)[张楷亮, 韦晓莹, 王芳, 武长强, 赵金石2011光电子·激光 22 656]
[9]	Fang B Y, Li Y, Tong G X, Wang X H, Yan M, Liang Q, Wang F, Qin Y, Ding J, Chen S J, Chen J K, Zheng H Z, Yuan W R 2015 Opt. Mater. 47 225
[10]	Seo G, Kim B J, Ko C, Cui Y, Lee Y W, Shin J H, Ramanathan S, Kim H T 2011 IEEE Electron Dev. Lett. 32 1582
[11]	Soltani M, Chaker M, Haddad E, Kruzelecky R 2006 Mea. Sci. Technol. 17 1052
[12]	Kanki T, Hotta Y, Asakawa N, Kawai T, Tanaka H 2010 Appl. Phys. Lett. 96 242108
[13]	Stefanovich G, Pergament A, Stefanovich D 2000 J. Phys.:Conden. Matter 12 8837
[14]	Liang J R, Hu M, Kan Q, Hou S B, Liang X Q, Chen H D 2012 Nanotechnology and Precision Engineering 10 160(in Chinese)[梁继然, 胡明, 阚强, 后顺保, 梁秀琴, 陈弘达2012纳米技术与精密工程 10 160]
[15]	Qiu D H, Wen Q Y, Yang Q H, Chen Z, Jing Y L, Zhang H W 2013 Acta Phys. Sin. 62 217201 (in Chinese)[邱东鸿, 文岐业, 杨青慧, 陈智, 荆玉兰, 张怀武2013物理学报 62 217201]
[16]	Lee J S, Ortolani M, Kouba J, Firsov A, Chang Y J, Noh T W, Schade U 2008 Infrared Phys. Technol. 51 443
[17]	Xiong Y, Wen Q Y, Tian W, Mao Q, Chen Z, Yang Q H, Jing Y L 2015 Acta Phys. Sin. 64 017202 (in Chinese)[熊瑛, 文岐业, 田伟, 毛淇, 陈智, 杨青慧, 荆玉兰2015物理学报 64 017102]
[18]	Markov P, Ryckman J D, Marvel R E, Hallman K A, Haglund R F, Weiss S M 2013 CLEO 2013 CTu2F.7
[19]	Schuler T, Aegerter M A 1999 Thin Solid Films 351 125
[20]	Perkins J D, Cueto J A D, Alleman J L, Warmsinghb C, Keyesa B M, Gedvilasa L M, Parillaa P A, Toa B, Readeyb D W, Ginleya D S 2002 Thin Solid Films 411 152
[21]	Yuan W R, Li Y, Wang X H, Zheng H Z, Chen S J, Chen J K, Sun Y, Tang J Y, Liu F, Hao R L, Fang B Y, Xiao H 2014 Acta Phys. Sin. 63 218101 (in Chinese)[袁文瑞, 李毅, 王晓华, 郑鸿柱, 陈少娟, 陈建坤, 孙瑶, 唐佳茵, 刘飞, 郝如龙, 方宝英, 肖寒2014物理学报 63 218101]
[22]	Xiao H, Li Y, Yuan W R, Fang B Y, Wang X H, Hao R L, Wu Z Y, Xu T T, Jiang W, Chen P Z 2016 Infrared Phys. Technol. 76 580

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基于AZO/VO2/AZO结构的电压诱导相变红外光调制器

1. 上海理工大学光电信息与计算机工程学院, 上海 200093;

2. 上海市现代光学系统重点实验室, 上海 200093;

3. 上海电力学院电子与信息工程学院, 上海 200090;

4. 上海健康医学院医学影像学院, 上海 201318

通信作者: 李毅, optolyclp@263.net

基金项目:

国家高技术研究发展计划（批准号：2006AA03Z348）、教育部科学技术研究重点项目（批准号：207033）、上海市科学技术委员会科技攻关计划（批准号：06DZ11415）、上海市教育委员会科技创新重点项目（批准号：10ZZ94）和上海市领军人才培养计划（批准号：2011-026）资助的课题.

收稿日期: 2016-05-25

修回日期: 2016-08-20

刊出日期: 2016-12-05

摘要: 采用直流磁控溅射和后退火工艺先在掺Al氧化锌（AZO）导电玻璃基底上制备了高质量的VO2薄膜，再在VO2膜层上制备AZO导电膜，最终制备出了AZO/VO2/AZO三明治结构.测试了VO2/AZO复合薄膜和AZO/VO2/AZO三明治结构的组分、微结构以及光学特性，结果表明VO2/AZO复合薄膜在8002300 nm红外区域其相变前后的最大透过率差值达24%，而AZO/VO2/AZO三明治结构在相同波长范围内其相变前后的最大透过率差值可达31%.通过在AZO/VO2/AZO三明治结构导电膜层上施加不同电压，观察到不同外界温度下电流的突变，当外界温度越高，所需阈值电压越低.AZO/VO2/AZO三明治结构性能稳定，制备工艺简单，有望应用于集成式红外光调制器.

关键词:

Infrared modulator based on AZO/VO2/AZO sandwiched structure due to electric field induced phase transition

1.
School of Optical-Electrical and Computer Engineering, University of Shanghai for Science and Technology, Shanghai 200093, China;

2.
Shanghai Key Laboratory of Modern Optical System, Shanghai 200093, China;

3.
Department of Electronic and Information Engineering, Shanghai University of Electric Power, Shanghai 200090, China;

4.
College of Medical Imaging, Shanghai University of Medicine and Health Sciences, Shanghai 201318, China

Fund Project:

Project supported by the National High Technology Research and Development Program of China (Grant No. 2006AA03Z348), the Foundation for Key Program of Ministry of Education, China (Grant No. 207033), the Science and Technology Research Project of Shanghai Science and Technology Commission, China (Grant No. 06DZ11415), the Key Science and Technology Research Project of Shanghai Committee, China (Grant No. 10ZZ94), and the Shanghai Talent Leading Plan, China (Grant No. 2011-026).

Received Date: 25 May 2016

Accepted Date: 20 August 2016

Published Online: 05 December 2016

Abstract: Electric field induced semiconductor-metal transition characteristics of VO2 indicate extensive application prospects in smart window,storage device,intelligent radiator,signal generator,optical switch,etc.In order to explore the electric field induced semiconductor-metal transition characteristics of VO2,AZO/VO2/AZO sandwiched structure is prepared to study the problem of optical modulation under the action of applied electrical drive.Firstly,V thin film is fabricated by direct current magnetron sputtering on a ZnO-doped Al (AZO) conductive glass substrate.The operating pressure during sputtering is kept at 3.610-1 Pa,and the sputtering current and voltage are 2 A and 400 V,respectively.The VO2/AZO composite film is prepared by annealing under the air atmosphere for 3.5 h at 400℃.Secondly,another AZO conductive film is deposited by radio frequency magnetron sputtering on the top of the VO2 thin film.Thirdly, Pt electrodes are patterned on the bottom and top of AZO conductive glass by using photolithography and chemical etching processes,and finally AZO/VO2/AZO sandwiched structure is achieved.The crystal structure of the thin film is analyzed by X-ray diffraction (XRD) apparatus.The surface morphologies of the samples were studied by atomic force microscope (AFM).X-ray photoelectron spectroscopy (XPS) system is used to study the relative quantity of the surface elements.The current-voltage characteristics are measured by semiconductor parameter analyzer.The optical properties of the AZO/VO2/AZO sandwiched structure are determined by spectrophotometer.XRD results show that the VO2 thin film has a distinct (011) preferred orientation and well-crystallized structure.AFM results indicate that the VO2 thin film has compact nanostructure and smooth surface with a surface roughness of 5.975 nm.XPS results reveal that the VO2 thin film has high purity.Optical transmittance curves show that the maximum change of the optical transmittance measured from VO2/AZO composite film during the phase transformation is 24% at 800-2300 nm,while the maximum modulation of the transmittance of AZO/VO2/AZO sandwiched structure reaches 31% in the same wavelength range. When applying different voltages to AZO/VO2/AZO sandwiched structure at different ambient temperatures,the current abrupt change can be seen at the threshold voltage.The threshold voltage of the thin film phase transition is 8.1 V at 20℃,while the threshold voltage is 5.9 V at 40℃.However,the threshold voltage is zero at 60℃,which indicates that the semiconductor-metal transition of the VO2 thin film happens at that temperature.It can be found that the higher the ambient temperature,the lower the threshold voltage is.AZO/VO2/AZO sandwiched structure has stable properties with simple preparation technology,and its modulation property meets the performance requirements for electro-optic modulator under applying the electrical drive,which is expected to be applied to the integrated infrared modulator.

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