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晶格失配应力对单晶(BiTm)3(GaFe)5O12膜磁畴结构的影响

郝俊祥 杨青慧 张怀武 文岐业 白飞明 钟智勇 贾利军马博 吴玉娟

晶格失配应力对单晶(BiTm)3(GaFe)5O12膜磁畴结构的影响

郝俊祥, 杨青慧, 张怀武, 文岐业, 白飞明, 钟智勇, 贾利军马博, 吴玉娟
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  • 利用液相外延工艺在钆镓石榴石衬底上制得了单晶(BiTm)3(GaFe)5O12膜,研究了晶格失配应力对其磁畴结构的影响.研究发现,生长速率越快,膜的晶格常数越大;晶格失配应力可以在一定范围内调整膜的垂直各向异性;随着晶格失配应力由较大张应力逐渐转变为较大压应力,磁畴形状先由磁泡畴转变成迷宫畴,然后转变为过渡态部分弯曲的条状畴,最终转变为整齐排列的条状畴;失配应力同时对畴宽也有影响,膜受到的失配应力越大,畴宽越大.这一实验研究对基于控制晶格失配应力来调控单晶膜的各向异性和磁畴结构有指导意义.
      通信作者: 杨青慧, yangqinghui@uestc.edu.cn
    • 基金项目: 国家自然科学基金(批准号:51472046,51272036,51002021,61131005)资助的课题.
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    Konishi S 1983 IEEE Trans. Magn. MAG-19 1938

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    Davies J E, Giess E A 1975 J. Mater. Sci. 10 2156

    [4]

    Paroli P 1984 Thin Solid Films 114 187

    [5]

    Aichele T, Lorenz A, Hergt R, Goernert P 2003 Cryst. Res. Technol. 38 575

    [6]

    Avci C O, Quindeau A, Pai C F, Mann M, Caretta L, Tang A S, Onbasli M C, Ross C A, Beach G 2016 Nat. Mater. 16 309

    [7]

    Rosencwaig A, Tabor W J 1971 J. Appl. Phys. 42 1643

    [8]

    Matthews J W, Klokholm E 1972 Mater. Res. Bull. 7 213

    [9]

    Liu X, Sasaki Y, Furdyna J K 2003 Phys. Rev. B 67 205204

    [10]

    Stone P R, Dreher L, Beeman J W, Yu K M, Brandt M S, Dubon O D 2010 Phys. Rev. B 81 205210

    [11]

    Dho J, Hur N H 2007 J. Magn. Magn. Mater. 318 23

    [12]

    Jung C U, Yamada H, Kawasaki M, Tokura Y 2004 Appl. Phys. Lett. 84 2590

    [13]

    Blank S L, Nielsen J W 1972 J. Cryst. Growth 17 302

    [14]

    Tian L G, Liu X L, Xu S S, Han X X 1989 Acta Phys. Sin. 38 1704(in Chinese) [田亮光, 刘湘林, 许顺生, 韩效溪 1989 物理学报 38 1704]

    [15]

    Hansen P, Witter K, Tolksdorf W 1983 Phys. Rev. B 27 4375

    [16]

    Hansen P 1974 J. Appl. Phys. 45 3638

    [17]

    Kubota M, Shibuya K, Tokunaga Y, Kagawa F, Tsukazaki A, Tokura Y, Kawasaki M 2013 J. Magn. Magn. Mater. 339 63

    [18]

    Guduru P R, Chason E, Freund L B 2003 J. Mech. Phys. Solids 51 2127

    [19]

    Wagner G, Gottschalcrt V, Rhan H, Paufler P 2010 Phys. Stat. Sol. 112 519

    [20]

    Yang Q H, Zhang H W, Liu Y L, Weng Q Y, Ji H 2008 The Fourth National Congress and academic conference of China Crystal Society Mount Huangshan, China 2008, p274 (in Chinese) [杨青慧, 张怀武, 刘颖力, 文岐业, 姬洪 2008中国晶体学会全国会员代表大会暨学术会议中国黄山, 2008, 第274页]

    [21]

    Luchechko A P, Syvorotka I I, Zakharko Y, Syvorotka I M 2013 Solid State Phenom. 200 215

    [22]

    Navarro-Quezada A, Rodrguez A G, Vidal M A, Navarro-Contreras H 2006 J. Cryst. Growth 291 340

    [23]

    Anastassakis E 1990 J. Appl. Phys. 68 4561

    [24]

    Mermoux M, Crisci A, Baillet F, Destefanis V, Rouchon D, Papon A M, Hartmann J M 2010 J. Appl. Phys. 107 013512

    [25]

    Bateman T B 1966 J. Appl. Phys. 37 2194

    [26]

    Makino H, Hibiya T, Matsumi K 1974 AIP Conf. Proc. 18 80

    [27]

    Randles M M 1978 Liquid Phase Epitaxial Growth of Magnetic Garnets (Vol. 1) (Heidelberg: Springer-Verlag) pp80-81

    [28]

    Capper P, Mauk M 2007 Liquid Phase Epitaxy of Electronic, Optical and Optoelectronic Materials (England: John Wiley Sons Ltd) pp333-334

    [29]

    Tkachuk S, Fratello V J, Krafft C, Lang G, Mayergoyz I D 2009 IEEE Trans. Magn. 45 4238

    [30]

    Heinz D M, Besser P J, Owens J M, Mee J E, Pulliam G R 1971 J. Appl. Phys. 42 1243

    [31]

    Hansen P, Witter K, Tolksdorf W 1984 J. Appl. Phys. 55 1052

    [32]

    Hansen P, Tolksdorf W, Witter K, Robertson J 1984 IEEE Trans. Magn. MAG-20 1099

    [33]

    Wen D, Zhang H, Hui X, Wang Y, Zhong Z, Bai F 2014 IEEE Trans. Magn. 50 2801804

    [34]

    Hansen P, Klages C, Witter K 1988 J. Appl. Phys. 63 2058

    [35]

    Nistor I, Krafft C, Rojas R, Mayergoyz I D 2004 IEEE Trans. Magn. 40 2832

    [36]

    Wen D, Zhang H, Yang X, L Q, Bai F 2017 J. Alloys Compd. 690 836

    [37]

    Zhu J, Su Y C, Pan J, Feng G L 2013 Acta Phys. Sin. 62 167503(in Chinese) [朱洁, 苏垣昌, 潘靖, 封国林 2013 物理学报 62 167503]

    [38]

    Shen D F, Du T D, Wang L J, Zhang W Z 1991 Acta Phys. Sin. 40 653(in Chinese) [沈德芳, 杜腾达, 王丽娟, 张伟珠 1991 物理学报 40 653]

    [39]

    Hansen P, Witter K 1985 J. Appl. Phys. 58 454

    [40]

    Kubota M, Tsukazaki A, Kagawa F, Shibuya K, Tokunaga Y, Kawasaki M, Tokura Y 2012 Appl. Phys. Express 5 103002

    [41]

    Mee J E, Pulliam G R, Archer J L, Besser P J 1969 IEEE Trans. Magn. Mag-5 717

  • [1]

    Bobeck A H 1967 Bell Syst. Tech. J. 46 1901

    [2]

    Konishi S 1983 IEEE Trans. Magn. MAG-19 1938

    [3]

    Davies J E, Giess E A 1975 J. Mater. Sci. 10 2156

    [4]

    Paroli P 1984 Thin Solid Films 114 187

    [5]

    Aichele T, Lorenz A, Hergt R, Goernert P 2003 Cryst. Res. Technol. 38 575

    [6]

    Avci C O, Quindeau A, Pai C F, Mann M, Caretta L, Tang A S, Onbasli M C, Ross C A, Beach G 2016 Nat. Mater. 16 309

    [7]

    Rosencwaig A, Tabor W J 1971 J. Appl. Phys. 42 1643

    [8]

    Matthews J W, Klokholm E 1972 Mater. Res. Bull. 7 213

    [9]

    Liu X, Sasaki Y, Furdyna J K 2003 Phys. Rev. B 67 205204

    [10]

    Stone P R, Dreher L, Beeman J W, Yu K M, Brandt M S, Dubon O D 2010 Phys. Rev. B 81 205210

    [11]

    Dho J, Hur N H 2007 J. Magn. Magn. Mater. 318 23

    [12]

    Jung C U, Yamada H, Kawasaki M, Tokura Y 2004 Appl. Phys. Lett. 84 2590

    [13]

    Blank S L, Nielsen J W 1972 J. Cryst. Growth 17 302

    [14]

    Tian L G, Liu X L, Xu S S, Han X X 1989 Acta Phys. Sin. 38 1704(in Chinese) [田亮光, 刘湘林, 许顺生, 韩效溪 1989 物理学报 38 1704]

    [15]

    Hansen P, Witter K, Tolksdorf W 1983 Phys. Rev. B 27 4375

    [16]

    Hansen P 1974 J. Appl. Phys. 45 3638

    [17]

    Kubota M, Shibuya K, Tokunaga Y, Kagawa F, Tsukazaki A, Tokura Y, Kawasaki M 2013 J. Magn. Magn. Mater. 339 63

    [18]

    Guduru P R, Chason E, Freund L B 2003 J. Mech. Phys. Solids 51 2127

    [19]

    Wagner G, Gottschalcrt V, Rhan H, Paufler P 2010 Phys. Stat. Sol. 112 519

    [20]

    Yang Q H, Zhang H W, Liu Y L, Weng Q Y, Ji H 2008 The Fourth National Congress and academic conference of China Crystal Society Mount Huangshan, China 2008, p274 (in Chinese) [杨青慧, 张怀武, 刘颖力, 文岐业, 姬洪 2008中国晶体学会全国会员代表大会暨学术会议中国黄山, 2008, 第274页]

    [21]

    Luchechko A P, Syvorotka I I, Zakharko Y, Syvorotka I M 2013 Solid State Phenom. 200 215

    [22]

    Navarro-Quezada A, Rodrguez A G, Vidal M A, Navarro-Contreras H 2006 J. Cryst. Growth 291 340

    [23]

    Anastassakis E 1990 J. Appl. Phys. 68 4561

    [24]

    Mermoux M, Crisci A, Baillet F, Destefanis V, Rouchon D, Papon A M, Hartmann J M 2010 J. Appl. Phys. 107 013512

    [25]

    Bateman T B 1966 J. Appl. Phys. 37 2194

    [26]

    Makino H, Hibiya T, Matsumi K 1974 AIP Conf. Proc. 18 80

    [27]

    Randles M M 1978 Liquid Phase Epitaxial Growth of Magnetic Garnets (Vol. 1) (Heidelberg: Springer-Verlag) pp80-81

    [28]

    Capper P, Mauk M 2007 Liquid Phase Epitaxy of Electronic, Optical and Optoelectronic Materials (England: John Wiley Sons Ltd) pp333-334

    [29]

    Tkachuk S, Fratello V J, Krafft C, Lang G, Mayergoyz I D 2009 IEEE Trans. Magn. 45 4238

    [30]

    Heinz D M, Besser P J, Owens J M, Mee J E, Pulliam G R 1971 J. Appl. Phys. 42 1243

    [31]

    Hansen P, Witter K, Tolksdorf W 1984 J. Appl. Phys. 55 1052

    [32]

    Hansen P, Tolksdorf W, Witter K, Robertson J 1984 IEEE Trans. Magn. MAG-20 1099

    [33]

    Wen D, Zhang H, Hui X, Wang Y, Zhong Z, Bai F 2014 IEEE Trans. Magn. 50 2801804

    [34]

    Hansen P, Klages C, Witter K 1988 J. Appl. Phys. 63 2058

    [35]

    Nistor I, Krafft C, Rojas R, Mayergoyz I D 2004 IEEE Trans. Magn. 40 2832

    [36]

    Wen D, Zhang H, Yang X, L Q, Bai F 2017 J. Alloys Compd. 690 836

    [37]

    Zhu J, Su Y C, Pan J, Feng G L 2013 Acta Phys. Sin. 62 167503(in Chinese) [朱洁, 苏垣昌, 潘靖, 封国林 2013 物理学报 62 167503]

    [38]

    Shen D F, Du T D, Wang L J, Zhang W Z 1991 Acta Phys. Sin. 40 653(in Chinese) [沈德芳, 杜腾达, 王丽娟, 张伟珠 1991 物理学报 40 653]

    [39]

    Hansen P, Witter K 1985 J. Appl. Phys. 58 454

    [40]

    Kubota M, Tsukazaki A, Kagawa F, Shibuya K, Tokunaga Y, Kawasaki M, Tokura Y 2012 Appl. Phys. Express 5 103002

    [41]

    Mee J E, Pulliam G R, Archer J L, Besser P J 1969 IEEE Trans. Magn. Mag-5 717

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出版历程
  • 收稿日期:  2018-01-26
  • 修回日期:  2018-03-15
  • 刊出日期:  2018-06-05

晶格失配应力对单晶(BiTm)3(GaFe)5O12膜磁畴结构的影响

    基金项目: 

    国家自然科学基金(批准号:51472046,51272036,51002021,61131005)资助的课题.

摘要: 利用液相外延工艺在钆镓石榴石衬底上制得了单晶(BiTm)3(GaFe)5O12膜,研究了晶格失配应力对其磁畴结构的影响.研究发现,生长速率越快,膜的晶格常数越大;晶格失配应力可以在一定范围内调整膜的垂直各向异性;随着晶格失配应力由较大张应力逐渐转变为较大压应力,磁畴形状先由磁泡畴转变成迷宫畴,然后转变为过渡态部分弯曲的条状畴,最终转变为整齐排列的条状畴;失配应力同时对畴宽也有影响,膜受到的失配应力越大,畴宽越大.这一实验研究对基于控制晶格失配应力来调控单晶膜的各向异性和磁畴结构有指导意义.

English Abstract

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