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高质量单层二硫化钼薄膜的研究进展

魏争 王琴琴 郭玉拓 李佳蔚 时东霞 张广宇

高质量单层二硫化钼薄膜的研究进展

魏争, 王琴琴, 郭玉拓, 李佳蔚, 时东霞, 张广宇
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  • 作为一种新型的二维半导体材料,单层二硫化钼薄膜由于其优异的特性,在电子学与光电子学等众多领域具有潜在的应用价值.本文综述了我们课题组在过去几年中针对单层二硫化钼薄膜的研究所取得的进展,具体包括:在二硫化钼薄膜的制备方面,通过氧辅助化学气相沉积方法,实现了大尺寸单层二硫化钼单晶的可控生长和晶圆级单层二硫化钼薄膜的高定向外延生长;在二硫化钼薄膜的加工方面,发展了单层二硫化钼薄膜的无损转移、洁净图案化加工、可控结构相变与局域相调控的方法,为场效应晶体管等电子学器件的制备与性能优化提供了基础;在二硫化钼异质结方面,研究了二硫化钼薄膜与其他二维材料形成的异质结的电学以及光电性质,为二维材料异质结的构筑和器件特性研究提供了实验参考;在二硫化钼薄膜功能化器件与应用方面,构筑了全二维材料、亚5 nm超短沟道场效应晶体管器件,验证了单层二硫化钼对短沟道效应的有效抑制及其在5 nm工艺节点器件中的应用优势;此外,利用制备的高质量单层二硫化钼和发展的器件洁净加工技术,实现了高性能柔性薄膜晶体管的集成,获得了超高灵敏度与稳定性的非接触型湿度传感器.我们在二硫化钼薄膜的制备、加工以及器件特性研究方面所取得的进展对于二硫化钼及其他二维过渡金属硫属化合物的基础和应用研究均具有指导意义.
      通信作者: 时东霞, dxshi@iphy.ac.cn;gyzhang@iphy.ac.cn ; 张广宇, dxshi@iphy.ac.cn;gyzhang@iphy.ac.cn
    • 基金项目: 国家自然科学基金(批准号:51572289,61734001)、国家重点研发计划(批准号:2016YFA0300904)、中国科学院前沿科学重点研究项目(批准号:QYZDB-SSW-SLH004)和中国科学院先导(B)培育项目(批准号:XDPB06)资助的课题.
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  • 收稿日期:  2018-04-18
  • 修回日期:  2018-05-12
  • 刊出日期:  2018-06-20

高质量单层二硫化钼薄膜的研究进展

  • 1. 中国科学院物理研究所, 北京凝聚态物理国家研究中心, 中国科学院纳米物理与器件重点实验室, 北京 100190;
  • 2. 中国科学院大学物理科学学院, 北京 100049;
  • 3. 纳米材料与器件物理北京市重点实验室, 北京 100190;
  • 4. 量子物质科学协同创新中心, 北京 100190
  • 通信作者: 时东霞, dxshi@iphy.ac.cn;gyzhang@iphy.ac.cn ; 张广宇, dxshi@iphy.ac.cn;gyzhang@iphy.ac.cn
    基金项目: 

    国家自然科学基金(批准号:51572289,61734001)、国家重点研发计划(批准号:2016YFA0300904)、中国科学院前沿科学重点研究项目(批准号:QYZDB-SSW-SLH004)和中国科学院先导(B)培育项目(批准号:XDPB06)资助的课题.

摘要: 作为一种新型的二维半导体材料,单层二硫化钼薄膜由于其优异的特性,在电子学与光电子学等众多领域具有潜在的应用价值.本文综述了我们课题组在过去几年中针对单层二硫化钼薄膜的研究所取得的进展,具体包括:在二硫化钼薄膜的制备方面,通过氧辅助化学气相沉积方法,实现了大尺寸单层二硫化钼单晶的可控生长和晶圆级单层二硫化钼薄膜的高定向外延生长;在二硫化钼薄膜的加工方面,发展了单层二硫化钼薄膜的无损转移、洁净图案化加工、可控结构相变与局域相调控的方法,为场效应晶体管等电子学器件的制备与性能优化提供了基础;在二硫化钼异质结方面,研究了二硫化钼薄膜与其他二维材料形成的异质结的电学以及光电性质,为二维材料异质结的构筑和器件特性研究提供了实验参考;在二硫化钼薄膜功能化器件与应用方面,构筑了全二维材料、亚5 nm超短沟道场效应晶体管器件,验证了单层二硫化钼对短沟道效应的有效抑制及其在5 nm工艺节点器件中的应用优势;此外,利用制备的高质量单层二硫化钼和发展的器件洁净加工技术,实现了高性能柔性薄膜晶体管的集成,获得了超高灵敏度与稳定性的非接触型湿度传感器.我们在二硫化钼薄膜的制备、加工以及器件特性研究方面所取得的进展对于二硫化钼及其他二维过渡金属硫属化合物的基础和应用研究均具有指导意义.

English Abstract

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