Search

Article

x

留言板

尊敬的读者、作者、审稿人, 关于本刊的投稿、审稿、编辑和出版的任何问题, 您可以本页添加留言。我们将尽快给您答复。谢谢您的支持!

姓名
邮箱
手机号码
标题
留言内容
验证码

Effect of Mg doping on properties of AlGaN films

Wang Feng-Xiang Hao Yue Feng Qian

Effect of Mg doping on properties of AlGaN films

Wang Feng-Xiang, Hao Yue, Feng Qian
PDF
Get Citation

(PLEASE TRANSLATE TO ENGLISH

BY GOOGLE TRANSLATE IF NEEDED.)

Metrics
  • Abstract views:  3030
  • PDF Downloads:  1068
  • Cited By: 0
Publishing process
  • Received Date:  09 September 2003
  • Accepted Date:  16 January 2004
  • Published Online:  05 May 2004

Effect of Mg doping on properties of AlGaN films

  • 1. (1)西安电子科技大学技术物理学院,西安 710071; (2)西安电子科技大学技术物理学院,西安 710071;西安电子科技大学微电子研究所,西安 710071

Abstract: Effect of Mg doping on the properties of AlGaN layers gro wn on sapphire substrates by metal_organic chemical vapor deposition were studie d using x_ray diffraction and Raman scattering. When the doping of Mg was low, the E2 mode shifted to lower frequency and the full width half at maximum of the rocking curve and A1(LO) mode decreased. However, as the flow rate of CP2Mg increased ti ll the AlGaN was doped with a dose as high as 4×102/sup>cm-3, the quali ty of film de creased gradually and the E2mode shifted to higher frequency, indicat ing a compressive stress in the films. Finally, the relation between the Raman s hift and the stress alteration was described by Δσ=-0298+0562ΔE.

Catalog

    /

    返回文章
    返回