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The laser ablated deposition of Si nanocrystalline film with narrow photoluminescence peak

Peng Ying-Cai Wang Ying-Long Lu Li-Fang Yan Chang-Yu Chu Li-Zhi Zhou Yang Fu Guang-Sheng

The laser ablated deposition of Si nanocrystalline film with narrow photoluminescence peak

Peng Ying-Cai, Wang Ying-Long, Lu Li-Fang, Yan Chang-Yu, Chu Li-Zhi, Zhou Yang, Fu Guang-Sheng
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  • Abstract views:  3279
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  • Received Date:  14 January 2005
  • Accepted Date:  25 April 2005
  • Published Online:  20 December 2005

The laser ablated deposition of Si nanocrystalline film with narrow photoluminescence peak

  • 1. (1)河北大学电子信息工程学院,保定 071002; (2)河北大学物理科学与技术学院,保定 071002

Abstract: The single crystalline Si target with high resistivity was ablated by a XeCl excimer laser (laser fluence 4J/cm2, repetition rate 1Hz), and at the ambient pressure of 10Pa of pure Ar gas, the nanocrystalline silicon film was deposited on a glass or single crystalline (111) Si substrate located at a distance of 3cm from the Si target in 30 and 10min, respectively. The Raman and x-ray diffraction spectra of the film deposited on the glass substrate indicate the film is nanocrystalline, which means that it is composed of Si nanoparticles. Scanning electron microscopy of the film on the Si substrate shows that the film has the mosaic structure of Si nano-crystallites of uniform size. The photoluminescence peak wavelength is 599nm with full width at half maximum of 56nm, which is blue-shifted and narrower than that obtained in He gas.

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