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Theoretical research on critical thickness of HgCdTe epitaxial layers

Wang Qing-Xue Yang Jian-Rong Wei Yan-Feng

Theoretical research on critical thickness of HgCdTe epitaxial layers

Wang Qing-Xue, Yang Jian-Rong, Wei Yan-Feng
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  • Received Date:  27 January 2005
  • Accepted Date:  28 March 2005
  • Published Online:  20 December 2005

Theoretical research on critical thickness of HgCdTe epitaxial layers

  • 1. 中国科学院上海技术物理研究所,上海 200083

Abstract: Based on the relationships between stress and strain in an arbitrary coordinate system, the elastic theory of crystal and the dislocation gliding theory, the critical thicknesses of HgCdTe/CdZnTe oriented in the [111] and [211] directions are calculated, and the dependence of the critical thickness of HgCdTe on substrate composition and film composition are studied. The results show that the critical thickness of HgCdTe depends sensitively on substrate composition and film composition. For 10μm films oriented in the [111] direction prepared by liquid phase epitaxy, the substrate composition and the films composition must match to within ±0.225‰ and ±5‰, respectively, to prevent the occurence of misfit dislocations. In addition, for 10μm films oriented in the [211] direction prepared by molecular beam epitaxy, the actual ranges of zinc composition and the films composition are ±0.2‰ and ±4‰ for the films to remain below the critical thickness, respectively.

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