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Generation mechanism of stress induced leakage current in flash memory cell

Liu Hong-Xia Zheng Xue-Feng Hao Yue

Generation mechanism of stress induced leakage current in flash memory cell

Liu Hong-Xia, Zheng Xue-Feng, Hao Yue
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  • Abstract views:  3884
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  • Cited By: 0
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  • Received Date:  08 April 2005
  • Accepted Date:  18 July 2005
  • Published Online:  20 December 2005

Generation mechanism of stress induced leakage current in flash memory cell

  • 1. 西安电子科技大学微电子学院,宽禁带半导体材料与器件教育部重点实验室, 西安 710071

Abstract: The generation mechanism of stress induced leakage current (SILC) in flash memory cell is studied by experiments. The result shows that the reliability problem under low electronic field stress is mainly caused by carriers charging and discharging inside the oxide, while under high electronic field, the trap-assisted tunneling and positive charge assisted tunneling induced charge variation of floating-gate is the major cause of flash memory cell failure. For both high and low electronic field stresses, the transient current and the steady-state current in SILC are calculated, respectively.

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