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Modeling of resistance changes based on the free volume in VLSI interconnection electromigration

Zong Zhao-Xiang Du Lei He Liang Zhuang Yi-Qi Wu Yong

Modeling of resistance changes based on the free volume in VLSI interconnection electromigration

Zong Zhao-Xiang, Du Lei, He Liang, Zhuang Yi-Qi, Wu Yong
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  • Abstract views:  3615
  • PDF Downloads:  1331
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  • Received Date:  06 February 2005
  • Accepted Date:  23 June 2005
  • Published Online:  20 December 2005

Modeling of resistance changes based on the free volume in VLSI interconnection electromigration

  • 1. (1)西安电子科技大学技术物理学院,西安 710071; (2)西安电子科技大学微电子研究所,西安 710071

Abstract: A well-known model for the rate of heterogeneous nucleation and growth of a second-phase precipitate in a solid matrix has successfully been applied to analyze the electromigration process in Al thin-film interconnects. The change of resistance is considered resulting mainly from the scattering of electrons by atoms around the vacancies or voids at grain boundaries. Free volume is introduced to describe the behavior of these atoms and to simplify the complicated scattering process by means of the effective scattering cross section of the free volume. The quantitative relation between the scattering cross section and the resistance change is established, and from which the resistance revolution can be characterized during different electromigration stages. Comparison of our simulation results with experimental data shows good agreement and our model can explain the previously unexplained abrupt resistance change phenomena.

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