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Fabrication and properties of the Y-doped Al2O3 high-k gate dielectric films

Geng Wei-Gang Lan Wei Huang Chun-Ming Wang Yin-Yue Guo De-Feng

Fabrication and properties of the Y-doped Al2O3 high-k gate dielectric films

Geng Wei-Gang, Lan Wei, Huang Chun-Ming, Wang Yin-Yue, Guo De-Feng
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  • Abstract views:  3255
  • PDF Downloads:  1210
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  • Received Date:  04 February 2005
  • Accepted Date:  05 July 2005
  • Published Online:  20 December 2005

Fabrication and properties of the Y-doped Al2O3 high-k gate dielectric films

  • 1. (1)兰州大学物理系,兰州 730000; (2)兰州大学物理系,兰州 730000;燕山大学物理系,秦皇岛 066004

Abstract: Y-doped Al2O3 dielectric films have been fabricated by reactive radio frequency co-sputtering method. Grazing angle incidence x-ray diffraction results show that the as-deposited and annealed films are amorphous. High resolution scanning electron microscope and atomic force microscope have been applied to observe the cross-section and the surface morphology of the thin films. The electric C-V and I-V characteristics were measured at high and variable frequency, respectively. It was found that the dielectric constant k of the films increases remarkably (from 8.14 to 11.8) with increasing Y-doping concentration. The Y—O bond is stronger than Al—O due to the obvious difference in electro-negativity between the two bond members, which enhanced the ionic polarization in the thin films leading to an increase of the dielectric constant. It was supposed that the presence of Y ions changed the structure and atomic coordination of Al2O3. The films were very smooth which meet the requirements of the device.

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