Zirconium substrates were implanted with yttrium and lanthanum ions with a fluence ranging from 1016/cm2 to 1017/cm2 at approx 130℃, using a metal vapor vacuum arc source at an acceleration voltage of 40kV. The surfaces of the implanted samples were then analysed. The valence states of elements in the implanted surface layer were analysed using x-ray photoelectron spectroscopy, showing that yttrium exists in the form of Y2O3, and lanthanum exists in the form of La2O3. Depth distributions of elements in the implanted surface of samples were obtained by Auger electron spectroscopy, showing that the thickness of oxide film on zirconium substrate increases with increasing implantation fluence, and when the fluence of 1017/cm2 was used, the maximum thickness of the oxide film was obtained. Rutherford backscattering indicates that a profile distribution depth of ～30nm of La appears in Zr, which also indicates that a serious sputtering occurred during the (La+Y) 1017/cm2 implantation.