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Fabrication of CNx nanotubes films using different nitrogen sources and their low field emission properties

Guo Xin-Yong Chao Ming-Ju Liang Er-Jun Ding Pei

Fabrication of CNx nanotubes films using different nitrogen sources and their low field emission properties

Guo Xin-Yong, Chao Ming-Ju, Liang Er-Jun, Ding Pei
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  • Abstract views:  3422
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  • Received Date:  04 February 2005
  • Accepted Date:  19 July 2005
  • Published Online:  20 December 2005

Fabrication of CNx nanotubes films using different nitrogen sources and their low field emission properties

  • 1. (1)河南大学特种功能材料实验室,开封 475001; (2)郑州大学物理工程学院,材料物理教育部重点实验室,郑州 450052; (3)郑州航空工业管理学院应用科学系,郑州 450015;郑州大学物理工程学院,材料物理教育部重点实验室,郑州 450052

Abstract: The CNx nanotube films have been fabricated on Si substrates by thermal decomposition when NH4Cl and C2H8N2 were used as nitrogen sources. The scanning electron microscopy, transmission electron microscopy and Raman spectroscopy were used to characterize the CNx nanotubes. It is found that not only the degrees of purity and ordering, but also the morphology of the CNx nanotubes are quite different when different nitrogen sources are used. The CNx nanotubes fabricated by pyrolyzing C2H8N2/C10H10Fe have “bamboo-like” structure and lower crystallinity,and grow horizontally in good order on silicon substrates. Low field emission measurement gives a turn-on field of 1.0V/μm and 860μA/cm2 current density at 2.89V/μm.

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