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Monte Carlo simulation of electron transmission through masks in projection electron lithography

Xiao Pei Zhang Zeng-Ming Sun Xia Ding Ze-Jun

Monte Carlo simulation of electron transmission through masks in projection electron lithography

Xiao Pei, Zhang Zeng-Ming, Sun Xia, Ding Ze-Jun
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  • Abstract views:  4265
  • PDF Downloads:  1396
  • Cited By: 0
Publishing process
  • Received Date:  23 January 2006
  • Accepted Date:  18 April 2006
  • Published Online:  20 November 2006

Monte Carlo simulation of electron transmission through masks in projection electron lithography

  • 1. (1)合肥微尺度物质科学国家实验室,中国科学技术大学天文与应用物理系,合肥 230026; (2)合肥微尺度物质科学国家实验室,中国科学技术大学物理系,合肥 230026

Abstract: We have calculated electron energy loss spectrum for electrons transmitted through a mask in projection electron lithography by Monte Carlo simulation based on the dielectric function model and Mott elastic scattering cross section. A good agreement between simulation and experiment is obtained. The calculation results of the transmission and contrast for the masks in scattering angular limitation for projection electron lithography show that the contrast is dominated by the thickness of scattering layer (thicker the scattering layer higher the contrast), but is less affected by the thickness of the supporting membrane. Furthermore, with the increasing aperture angle the transmission increases but the contrast reduces, and the contrast decreases with increasing primary energy of electrons.

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