Search

Article

x

留言板

尊敬的读者、作者、审稿人, 关于本刊的投稿、审稿、编辑和出版的任何问题, 您可以本页添加留言。我们将尽快给您答复。谢谢您的支持!

姓名
邮箱
手机号码
标题
留言内容
验证码

A deep sub-micrometer NMOSFET non-local transport model for ESD effect

Zhu Zhi-Wei Hao Yue Zhang Jin-Feng Fang Jian-Ping Liu Hong-Xia

A deep sub-micrometer NMOSFET non-local transport model for ESD effect

Zhu Zhi-Wei, Hao Yue, Zhang Jin-Feng, Fang Jian-Ping, Liu Hong-Xia
PDF
Get Citation

(PLEASE TRANSLATE TO ENGLISH

BY GOOGLE TRANSLATE IF NEEDED.)

Metrics
  • Abstract views:  3935
  • PDF Downloads:  1277
  • Cited By: 0
Publishing process
  • Received Date:  05 January 2006
  • Accepted Date:  12 March 2006
  • Published Online:  20 November 2006

A deep sub-micrometer NMOSFET non-local transport model for ESD effect

  • 1. 西安电子科技大学微电子学院,宽禁带半导体材料与器件教育部重点实验室,西安 710071

Abstract: Non-local transport characteristics of the deep sub-micrometer NMOS device are studied under electro-static discharge (ESD) stress. The result obtained shows that velocity overshoot may increase the drain current and has a great impact on the device characteristics, and that the energy relaxation time is correlated closely with the electric field of some point in the device as well as the velocity and the energy of the carriers, thus constant value is not appropriate for this parameter. The energy relaxation time and the high field mobility as functions of the carrier energy are gained by Monte Carlo calculation, and then device simulation is performed with these parameter models. Comparing ESD simulation with experimental results shows that accurate result about the I-V characteristics can be gained by using the models of the energy relaxation time and the high field mobility.

Catalog

    /

    返回文章
    返回