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The breakdown characteristics of ultra-thin gate oxide n-MOSFET under voltage stress

Ma Xiao-Hua Hao Yue Chen Hai-Feng Cao Yan-Rong Zhou Peng-Ju

The breakdown characteristics of ultra-thin gate oxide n-MOSFET under voltage stress

Ma Xiao-Hua, Hao Yue, Chen Hai-Feng, Cao Yan-Rong, Zhou Peng-Ju
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Publishing process
  • Received Date:  04 April 2006
  • Accepted Date:  19 April 2006
  • Published Online:  20 November 2006

The breakdown characteristics of ultra-thin gate oxide n-MOSFET under voltage stress

  • 1. 西安电子科技大学微电子研究所,宽禁带半导体材料与器件教育部重点实验室,西安 710071

Abstract: The characteristics of the TDDB (Time-dependent dielectric breakdown) under the CVS (constant voltage stress) and the gate current model of devices under V-ramp stress were studied in the 1.4nm-thick n-MOSFET. The degradation and failure mechanisms were analyzed. The gate current is produced by the tunneling, the electron surmounting and percolation. During the stress process, the created traps in the oxide not only debase the height of the SiO2 barrier, but also diminish the breadth of the barrier. Every trap engenders a conduction path. These paths enhance the gate current, degrade the device performance and prolong the broken-time of the gate oxide.

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