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Characteristics of electron energy distribution function of capacitively coupled plasma excited by 60MHz RF source

Sun Kai Xin Yu Huang Xiao-Jiang Yuan Qiang-Hua Ning Zhao-Yuan

Characteristics of electron energy distribution function of capacitively coupled plasma excited by 60MHz RF source

Sun Kai, Xin Yu, Huang Xiao-Jiang, Yuan Qiang-Hua, Ning Zhao-Yuan
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  • Abstract views:  3703
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  • Received Date:  14 January 2008
  • Accepted Date:  27 February 2008
  • Published Online:  20 October 2008

Characteristics of electron energy distribution function of capacitively coupled plasma excited by 60MHz RF source

  • 1. 苏州大学物理科学与技术学院,江苏省薄膜材料重点实验室,苏州 215006

Abstract: Capacitively coupled plasma (CCP) source excited by very-high-frequency (VHF) source has attracted much attention in semiconductor industry due to its ability to generate high density plasma with a large area. The electron behavior and discharge properties of capacitively coupled plasma excited by 60MHz RF source were investigated by using current and voltage probe and Langmuir probe techniques. The experimental results show that equivalent resistance or capacitance of capacitively coupled plasma decreases or increases, respectively, with the increment of input RF power. It is also shown that the electron behavior in the plasma is related not only with RF input power but also discharge pressure. Increase in pressure causes the transition of electron energy distribution function from Bi-Maxwellian type to Druyvesteyn type, with its transition pressure much lower than that reported by others, which is due to a great decrease in efficiency of electron bounced resonance heating in CCP driven by 60MHz.

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