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Effect of boron doping on the electrical conduction of tetrahedral amorphous carbon films

Zhu Jia-Qi Tan Man-Lin Zhang Hua-Yu Zhu Zhen-Ye Han Jie-Cai

Effect of boron doping on the electrical conduction of tetrahedral amorphous carbon films

Zhu Jia-Qi, Tan Man-Lin, Zhang Hua-Yu, Zhu Zhen-Ye, Han Jie-Cai
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  • Received Date:  06 January 2008
  • Accepted Date:  25 February 2008
  • Published Online:  20 October 2008

Effect of boron doping on the electrical conduction of tetrahedral amorphous carbon films

  • 1. (1)哈尔滨工业大学复合材料与结构研究所,哈尔滨 150018; (2)哈尔滨工业大学深圳研究生院,深圳 518055; (3)哈尔滨工业大学深圳研究生院,深圳 518055;哈尔滨工业大学复合材料与结构研究所,哈尔滨 150018

Abstract: Boron doped tetrahedral amorphous carbon films were prepared on a filtered cathodic vacuum arc deposition system by varying the weight percentage of boron in the mixed graphite cathodes. The electrical conductivity versus temperature, I-V characteristic and C-V characteristic for the films were measured by four-probe method, impedance/gain-phase analyzer, and electrochemical interface, respectively. As the boron content increases from 0 to 6.04 at%, the electrical conductivity of the films at room temperature increases gradually and then drops down, while the activation energy varies in the reverse. At the boron content of 2.13 at%, a maximum value of 1.42×10-7 S/cm and a minimum value of 0.1eV were obtained for the above two parameters, respectively. Furthermore, the rectification characteristics in the I-V curve indicated a p-n junction diode was formed for the boron doped tetrahedral amorphous carbon/n-type silicon heterojunction with uniform doping levels in the space at the two ends of the junction.

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