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Study on crystallization mechanism of hydrogenated silicon film

Li Shi-Bin Wu Zhi-Ming Li Wei Yu Jun-Sheng Jiang Ya-Dong Liao Nai-Man

Study on crystallization mechanism of hydrogenated silicon film

Li Shi-Bin, Wu Zhi-Ming, Li Wei, Yu Jun-Sheng, Jiang Ya-Dong, Liao Nai-Man
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  • Received Date:  02 February 2008
  • Accepted Date:  05 May 2008
  • Published Online:  20 November 2008

Study on crystallization mechanism of hydrogenated silicon film

  • 1. 电子科技大学光电信息学院电子薄膜与集成器件国家重点实验室,成都 610054

Abstract: In this paper, amorphous, microcrystalline and polymorphous silicon films were prepared by plasma enhanced chemical deposition. Crystalline volume fraction of microcrystalline silicon was deduced from the Raman spectrum, and this fraction was validated using Bruggeman effective medium approximation (BEMA) model in spectroscopic ellipsometry measurement. The influence of thermal gradient on the deposition mechanism of microcrystalline and polymorphous silicon was investigated using a theoretical model. The dependence of crystalline volume fraction on film thickness shows there is a crystalline gradient between bottom and surface of microcrystalline film, and there is not such a gradient in polymorphous silicon film. Polymorphous and microcrystalline silicon have similar ordered state and density, which are signifieantly higher than those of amorphous silicon.

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