Search

Article

x

留言板

尊敬的读者、作者、审稿人, 关于本刊的投稿、审稿、编辑和出版的任何问题, 您可以本页添加留言。我们将尽快给您答复。谢谢您的支持!

姓名
邮箱
手机号码
标题
留言内容
验证码

Study on electronic structure and transport properties of graphene nanoribbons with single vacancy defects

Ouyang Fang-Ping Li Ming-Jun Xiao Jin Xu Hui Wang Huan-You

Study on electronic structure and transport properties of graphene nanoribbons with single vacancy defects

Ouyang Fang-Ping, Li Ming-Jun, Xiao Jin, Xu Hui, Wang Huan-You
PDF
Get Citation

(PLEASE TRANSLATE TO ENGLISH

BY GOOGLE TRANSLATE IF NEEDED.)

Metrics
  • Abstract views:  3870
  • PDF Downloads:  1336
  • Cited By: 0
Publishing process
  • Received Date:  08 August 2007
  • Accepted Date:  17 November 2007
  • Published Online:  20 November 2008

Study on electronic structure and transport properties of graphene nanoribbons with single vacancy defects

  • 1. (1)中南大学物理科学与技术学院,长沙 410083; (2)中南大学物理科学与技术学院,长沙 410083;湘南学院物理系,郴州 423000

Abstract: Based on first-principles electronic structure and transport calculations, we have studied electronic structure and transport properties of graphene nanoribbons with single vacancy defects. It is shown that introduction of the single vacancy defects leads to a flat band belt at the Fermi energy level for graphene nanoribbons and the semiconductor-metal transition in zigzag semiconducting graphene nanoribbons, which is useful in the energy-band engineering. Armchair graphene nanoribbons with odd width are metallic with good electric conduction while armchair graphene nanoribbons with even width have metallic band structures with character of the group IV semiconductor. Single vacancy defects weakens the conduction of armchair graphene nanoribbons with odd width while obviously strengthens the conduction of armchair graphene nanoribbons with even width.

Catalog

    /

    返回文章
    返回