Search

Article

x

留言板

尊敬的读者、作者、审稿人, 关于本刊的投稿、审稿、编辑和出版的任何问题, 您可以本页添加留言。我们将尽快给您答复。谢谢您的支持!

姓名
邮箱
手机号码
标题
留言内容
验证码

Morphology and defect of a-GaN grown by metal orgamic chemical vapor deposition

Cui Ying-Chao Xie Zi-Li Zhao Hong Mei Qin Li Yi Liu Bin Song Li-Hong Zhang Rong Zheng You-Dou

Morphology and defect of a-GaN grown by metal orgamic chemical vapor deposition

Cui Ying-Chao, Xie Zi-Li, Zhao Hong, Mei Qin, Li Yi, Liu Bin, Song Li-Hong, Zhang Rong, Zheng You-Dou
PDF
Get Citation
Metrics
  • Abstract views:  3194
  • PDF Downloads:  1116
  • Cited By: 0
Publishing process
  • Received Date:  02 September 2008
  • Accepted Date:  07 April 2009
  • Published Online:  20 December 2009

Morphology and defect of a-GaN grown by metal orgamic chemical vapor deposition

  • 1. 南京大学物理系,微结构国家实验室,江苏省光电信息功能材料重点实验室,南京 210093

Abstract: On the substrate of r-sapphires a-GaN films grown by metal orgamic chemical vapor deposition was etched in molten KOH-NaOH for 1.0,1.5 and 2.0 min. Scanning electron microscope, atomic force microscope, X-ray diffraction and cathodoluminescence was used to study its morphology and defect. We find that etching for 1.5 min at the temperature of 400 ℃ is appropriate for a-GaN on sapphires substrate. Different from c-GaN which show hexagonal pits, a-GaN shows parallelogram strips. In the direction of c axis it is easier to be etched. That is because the polarity of a-GaN films is anisotropic which leads to different absorption capacities of OH ions in different directions. We also find hexagonal protuberance on the surface which is associated with threading dislocations.

Catalog

    /

    返回文章
    返回