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High mobility polymer thin-film transistors

Liu Yu-Rong Wang Zhi-Xin Yu Jia-Le Xu Hai-Hong

High mobility polymer thin-film transistors

Liu Yu-Rong, Wang Zhi-Xin, Yu Jia-Le, Xu Hai-Hong
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  • PDF Downloads:  1642
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  • Received Date:  21 April 2009
  • Accepted Date:  30 April 2009
  • Published Online:  20 December 2009

High mobility polymer thin-film transistors

  • 1. (1)华南理工大学电子与信息学院,广州 510640; (2)华南理工大学应用物理系,广州 510640

Abstract: Polymer-based thin film transistors (PTFTs) were successfully fabricated on silicon substrates which was used as gate electrode, thermal silicon dioxide was used as gate insulators and poly(3-hexylthiophene) as semiconducting active layers for the transistors. The fabrication and measurement of the devices were all performed in the clean air. The PTFTs with a surface-modified gate insulator show better electric characteristics with the field-effect mobility of 0.02 cm2/(Vs) and the on/off ratio higher than 105.

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