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Electronic transport properties of the multilayer structure double spin-filter tunnel junction

Zhu Lin Jin Lian Li Ling Xie Zheng-Wei

Electronic transport properties of the multilayer structure double spin-filter tunnel junction

Zhu Lin, Jin Lian, Li Ling, Xie Zheng-Wei
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  • Received Date:  09 April 2009
  • Accepted Date:  24 April 2009
  • Published Online:  20 December 2009

Electronic transport properties of the multilayer structure double spin-filter tunnel junction

  • 1. (1)乐山师范学院物理与电子信息科学系,乐山 614004; (2)四川师范大学物理与电子工程学院,成都 610066

Abstract: Based on the transfer matrix method and the quantum coherent transport theory of Mireles and Kirczenow, the effects of the Rashba spin-orbit coupling and the spin-filter on the electronic transport properties in the NM/FS1/I/FS2/NM(NM represents the nonmagnetic metal layer, I represents the nonmagnetic insulator layer, and FS represents the magnetic semiconductor layer)double spin-filter tunnel junction are investigated. The influence of thickness of insulator layer and magnetic semiconductor layer on the tunnel magnetoresistance (TMR) and conductance are studied for different Rashba spin-orbit coupling strength and the different angle θ between the two magnetic moments of the left and right magnetic semiconductor layer. The results indicate that: in the presence of the spin-filter effect and the Rashba spin-orbit coupling interaction in the magnetic semiconductor layer, large TMR can be obtained in this double spin-filter junction. With the strength of Rashba spin-orbit coupling increasing, the tunnel magnetoresistance and conductance exhibit rapidly oscillating behavior and the oscillation period decreases gradually.

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