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Three-dimensional numerial simulation of single event upset effects in static random access memory

Zhang Ke-Ying Guo Hong-Xia Luo Yin-Hong He Bao-Ping Yao Zhi-Bin Zhang Feng-Qi Wang Yuan-Ming

Three-dimensional numerial simulation of single event upset effects in static random access memory

Zhang Ke-Ying, Guo Hong-Xia, Luo Yin-Hong, He Bao-Ping, Yao Zhi-Bin, Zhang Feng-Qi, Wang Yuan-Ming
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  • Abstract views:  3540
  • PDF Downloads:  1147
  • Cited By: 0
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  • Received Date:  05 January 2009
  • Accepted Date:  18 April 2009
  • Published Online:  20 December 2009

Three-dimensional numerial simulation of single event upset effects in static random access memory

  • 1. 西北核技术研究所,西安 710024

Abstract: Three-Dimensional model of static random access memory (SRAM) six-transistor cell is generated by three dimensional process simulator FLOOPS, and device simulator DESSIS is used to simulate the single-event upset effect in SRAM. Single-event upset and charge collecting maps are calculated directly from 3-D simulations. Single event upset maps and cross-section curves obtained from numerial simulation show excellent agreement with broad beam cross section curves and micro-beam upset images for 2 kbit hardened SRAM. It indicates that the three-dimensional model could be used to research the single event upsets in SRAM.

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