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Characteristics of high- and low-dose-rate damage for domestic npn transistors of various emitter areas

Lu Wu Ren Di-Yuan Guo Qi Yu Xue-Feng He Cheng-Fa Zheng Yu-Zhan Wang Yi-Yuan

Characteristics of high- and low-dose-rate damage for domestic npn transistors of various emitter areas

Lu Wu, Ren Di-Yuan, Guo Qi, Yu Xue-Feng, He Cheng-Fa, Zheng Yu-Zhan, Wang Yi-Yuan
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  • Abstract views:  2196
  • PDF Downloads:  996
  • Cited By: 0
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  • Received Date:  18 November 2008
  • Accepted Date:  08 January 2009
  • Published Online:  20 August 2009

Characteristics of high- and low-dose-rate damage for domestic npn transistors of various emitter areas

  • 1. (1)中国科学院新疆理化技术研究所,乌鲁木齐 830011; (2)中国科学院新疆理化技术研究所,乌鲁木齐 830011;中国科学院研究生院,北京 100049

Abstract: There are many factors such as process technologies, dose rates and biased conditions which can affect radiation damage in npn transistors. High- and low-dose-rate radiation response of domestic npn transistors with three kinds of emitter areas were investigated in this article. The influence of emitter area on radiation damage was analyzed. The results show that the degradation of current gain was more severe at low dose rate, i.e. enhanced low-dose-rate sensitivity. Furthermore, radiation damage was more apparent at low current injection. Through the comparison of radiation damage for different emitter areas, it was found that greater perimeter-to-area ratio (P/A) would cause greater normalized excess base current (IB/IB0). The damage mechanism for npn transistors is explained in detail, and the radiation hardness assurance is explored with respect to the emitter area and operating voltage of npn transistors.

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