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Characteristic of hybrid single electron transistor and metal oxide semiconductor structure in Chua’s circuit

Feng Chao-Wen Cai Li Zhang Li-Sen Yang Xiao-Kuo Zhao Xiao-Hui

Characteristic of hybrid single electron transistor and metal oxide semiconductor structure in Chua’s circuit

Feng Chao-Wen, Cai Li, Zhang Li-Sen, Yang Xiao-Kuo, Zhao Xiao-Hui
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  • Received Date:  18 December 2009
  • Accepted Date:  13 June 2010
  • Published Online:  15 December 2010

Characteristic of hybrid single electron transistor and metal oxide semiconductor structure in Chua’s circuit

  • 1. College of Science, Air Force Engineering University, Xi’an 710051, China

Abstract: The negative differential resistance (NDR) characteristic equation of single electron transistor and metal oxide semiconductor (SETMOS) hybrid structure is simplified by a fitting method. And a new approach to designing multi-scroll chaotic circuit with SETMOS is proposed. The effect of NDR characteristic on the equilibrium point of multi-scroll Chua’s circuit is analyzed both qualitatively and quantitatively. The results show that the unidirectional motions of radial contract and axial tension occur in the negative sections of multi-scroll Chua’s circuit, whereas in the positive sections appear the scroll motions of radial tension and axial contract. The result provides theoretical basis for the construction of multi-scroll chaotic circuits and the further study of their complex dynamical behaviors.

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